Apparatus and method for temperature measurement by radiation
    21.
    发明授权
    Apparatus and method for temperature measurement by radiation 失效
    辐射温度测量装置及方法

    公开(公告)号:US5127742A

    公开(公告)日:1992-07-07

    申请号:US688014

    申请日:1991-04-19

    Applicant: Jacob Fraden

    Inventor: Jacob Fraden

    CPC classification number: G01J5/524 G01J5/62 G01J2005/063 G01J2005/623

    Abstract: A thermal radiation sensor is joined with a shutter that is adapted for reversible interruption of radiation from an object to the sensor. The shutter includes an integral electrically operated heater for maintaining a portion of the shutter at a predetermined temperature as a thermal reference for the sensor. The sensor is alternatively exposed to radiation from the object and the thermal reference portion of the shutter, and provides a first signal representative of the radiation that it receives from the object and a second signal representative of the radiation that it receives from the reference portion. An electronic circuit is connected to the sensor for receiving the first and second signals, for calculating the temperature of the object, and for providing a signal representative of the calculated temperature.

    Abstract translation: 热辐射传感器与适于可逆地中断从物体到传感器的辐射的快门连接。 快门包括用于将一部分快门保持在预定温度的整体电动加热器作为传感器的热参考。 传感器交替地暴露于来自物体和快门的热参考部分的辐射,并且提供表示从物体接收的辐射的第一信号和表示从参考部分接收的辐射的第二信号。 电子电路连接到传感器,用于接收第一和第二信号,用于计算物体的温度,并提供表示计算出的温度的信号。

    Emissivity calibration apparatus and method
    22.
    发明授权
    Emissivity calibration apparatus and method 失效
    发射率校准装置及方法

    公开(公告)号:US4854727A

    公开(公告)日:1989-08-08

    申请号:US114542

    申请日:1987-10-26

    Abstract: An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in close proximity to the center of the wafer with the temperature measured by the emission of radiation from the surface of the wafer through the walls of the processing chamber. Temperature measurements subsequently made from the radiation emitted from the surface of similar wafers are corrected with reference to the measurement made of the temperature within the susceptor on the sample wafer.

    Abstract translation: 公开了一种改进的方法和装置,用于通过将样品晶片支撑在腔室内的石墨感受器上来校准处理室内的半导体晶片的发射率特性,并且通过将基座内测量的温度与晶片的中心相接近 其温度通过从晶片表面通过处理室的壁的辐射而被测量。 随后从相似晶片表面发射的辐射产生的温度测量参照由样品晶片上的基座内的温度进行的测量来校正。

    Method of and an apparatus for measuring surface temperature and
emmissivity of a heated material
    23.
    发明授权
    Method of and an apparatus for measuring surface temperature and emmissivity of a heated material 失效
    用于测量加热材料的表面温度和辐射率的方法和装置

    公开(公告)号:US4465382A

    公开(公告)日:1984-08-14

    申请号:US239727

    申请日:1981-03-02

    CPC classification number: G01J5/524 G01J2005/0074 G01J5/0044 G01J5/62

    Abstract: When a steel sheet or the like is heated in a furnace to a temperature somewhat higher than the room temperature and is still or moved, its temperature can be measured by detecting the radiant energy therefrom. The measurement is normally difficult due to the influence of background noise of radiant energy from the surroundings, change of the transmittance factor of the environment or atmosphere for radiant energy, and change of the emissivity of the object to be measured. In order to remove such causes of errors and to correctly measure the temperature by detecting radiant energy, a radiometer and a black body radiator are disposed symmetrically and specularly with respect to the normal to a surface of an object to be measured, and two different amounts of radiant energies are emitted from the black body radiator, and the emissivity of the object to be measured is determined from the detected values from the radiometer, the two temperature values of the black body radiator, and the diffusely reflecting factor associated with the object to be measured, whereby correct measurement of the surface temperature of the object to be measured can be done. Embodiments for implementing this method are proposed.

    Abstract translation: 当钢板等在炉中加热到稍高于室温并仍然或移动的温度时,可以通过检测其温度来测量其温度。 由于来自周围的辐射能的背景噪声,辐射能的环境或大气的透过率因子的变化以及被测定物的发射率的变化,通常难以进行测量。 为了消除这种错误的原因并且通过检测辐射能来正确地测量温度,辐射计和黑体散热器相对于被测量物体的表面的法线对称且镜面地设置,并且两个不同的量 从黑体散热器发射辐射能,并且根据来自辐射计的检测值,黑体散热器的两个温度值和与该对象相关联的漫反射因数确定待测物体的发射率 可以进行测量对象物的表面温度的正确测量。 提出了实现该方法的实施例。

    表面温度の測定方法及び測定システム
    26.
    发明申请
    表面温度の測定方法及び測定システム 审中-公开
    用于测量表面温度的方法和系统

    公开(公告)号:WO2012081512A1

    公开(公告)日:2012-06-21

    申请号:PCT/JP2011/078536

    申请日:2011-12-09

    Abstract: 本発明は、被測定面の放射率分布に影響されずに正しく被測定面の表面温度を測定することができる測定方法及び測定システムを提供する。放射率分布を持つ被測定面と、該被測定面の輝度分布を測定する放射計と、該被測定面に関して該放射計から鏡面反射位置に設置された補助熱源とを用意し、該被測定面の放射率の異なる2か所の輝度を2つの異なる補助熱源温度で測定し、該放射率の異なる2か所のそれぞれ2つの輝度測定値に基づいて該放射率の異なる2か所の反射率比を算出し、該放射率の異なる2か所の輝度測定値と該反射率比を用いて該被測定面の温度を求める。

    Abstract translation: 本发明提供一种测量方法和测量系统,用于正确地测量待测表面的表面温度,而不受被测表面的发射率分布的影响。 要测量的表面,所述表面具有辐射率分布,测量待测表面的亮度分布的辐射计和辅助热源,其设置在相对于表面的辐射计的镜面反射位置处 测量,准备。 然后,在两个不同的辅助热源温度下测量待测表面上具有不同发射率的两个区域的亮度,并且基于具有不同发射率的两个区域的两个亮度测量值,两者的反射率 计算具有不同发射率的区域,并且使用亮度测量值和具有不同发射率的两个区域的反射率比来获得要测量的表面的温度。

    STRAHLUNGSMESSGERÄT SOWIE VERFAHREN UND EINRICHTUNG ZUR ÜBERPRÜFUNG DER ORDNUNGSGEMÄSSEN FUNKTIONSWEISE DES STRAHLUNGSMESSGERÄTES
    29.
    发明授权
    STRAHLUNGSMESSGERÄT SOWIE VERFAHREN UND EINRICHTUNG ZUR ÜBERPRÜFUNG DER ORDNUNGSGEMÄSSEN FUNKTIONSWEISE DES STRAHLUNGSMESSGERÄTES 有权
    辐射测量仪和检查辐射测量仪的正确操作方法及装置

    公开(公告)号:EP1789764B1

    公开(公告)日:2008-10-01

    申请号:EP05783102.6

    申请日:2005-08-25

    Applicant: KAZ Europe SA

    Inventor: KRAUS, Bernhard

    CPC classification number: G01J5/524 G01J5/061

    Abstract: Disclosed is a method for testing whether a radiation measuring apparatus comprising a heatable or coolable radiation incidence window (W) functions properly. According to said method, a modification (?U W ) of the sensor signal (U) is detected and analyzed in accordance with the window temperature (T W ) during a heating or cooling process. The difference ?U = |U 2 -U 1 | between two test signals (U 1 and U 2 ) which represent the temperature (T b ) of any test object and are recorded at two different temperatures (T W1 and T W2 ) of the radiation incidence window (W) can be used as a measure for said modification, for example. Said difference is compared to a predefined reliability value or tolerance range within which the radiation measuring apparatus is guaranteed to function properly. A fault is signaled in case there might be a deviation. Preferably, the user is also provided with an indication as to the type of the detected fault, such as a dirty radiation incidence window (W) or a calibration error, as well as a tip or a possibility on how to correct said fault. A detected calibration error can also be corrected automatically if necessary. The invention further relates to a radiation measuring apparatus, i.e. an infrared radiation thermometer, for carrying out said method.

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