公开(公告)号：WO2006100927A1

公开(公告)日：2006-09-28

申请号：PCT/JP2006/304562

申请日：2006-03-09

Applicant: 住友電気工業株式会社 ,  羽木 良明

Inventor： 羽木 良明

IPC: C30B11/00

CPC classification number: C30B11/002 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1036

Abstract: 　結晶育成用坩堝（１）は、種結晶を設置するための円筒状の先端部（３）と、結晶を育成するために先端部の上方に形成されていて先端部の径より大きい径を有する円筒状の直胴部（５）とを含む窒化ほう素製坩堝であって、先端部の厚みＴ１と直胴部の厚みＴ２とは０．１ｍｍ≦Ｔ２＜Ｔ１≦５ｍｍの条件を満たし、直胴部の内径Ｄ２と直胴部の長さＬ２とは１００ｍｍ＜Ｄ２および２＜Ｌ２／Ｄ２＜５の条件を満たすことを特徴としている。

Abstract translation: 包括用于设置晶种的圆柱形远端部分（3）和设置在远端部分上方的圆柱形直线部分（5）的氮化硼的晶体生长坩埚（1），用于晶体生长并具有比远端更大的直径 其特征在于，所述前端部的厚度（T1）和所述直线躯干部的厚度（T2）满足0.1mm = T2

公开(公告)号：WO02081044A2

公开(公告)日：2002-10-17

申请号：PCT/US0149725

申请日：2001-12-20

Applicant: ASE AMERICAS INC

Inventor： MACKINTOSH BRIAN H ,  OUELLETTE MARC

IPC: C30B15/00 ,  C30B15/34 ,  C30B29/06 ,  B01D

CPC classification number: C30B29/06 ,  C30B15/20 ,  C30B15/34 ,  Y10T117/10 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1056 ,  Y10T117/1068

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract translation: 改进的机械布置控制在晶体生长运行期间将硅颗粒引入到用于熔体补充的EFG（边缘定影膜进料生长）坩埚/模具单元中。 进料单元向上注入硅颗粒，通过坩埚/模具单元的中心毂并且机械装置拦截注入的颗粒并引导它们使得它们在坩埚的选定区域中以降低飞溅的速度落入熔体中，由此 以减少由于在中心毂和邻接部件上形成固体硅块而导致生长过程中断的可能性。 本发明还包括使用法拉第环来改变流过通过加热坩埚模具单元的主感应加热线圈和次级感应加热线圈的电流的比率和机械装置。

公开(公告)号：WO1992001091A1

公开(公告)日：1992-01-23

申请号：PCT/US1991004868

申请日：1991-07-09

Applicant: SAPHIKON, INC.

Inventor： SAPHIKON, INC. ,  LOCHER, John, W. ,  MADSEN, Joseph, E.

IPC: C30B15/34

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B29/20 ,  C30B29/60 ,  Y10T117/1036 ,  Y10T117/104

Abstract: A single crystal dome (14) is formed from a surface of revolution and grown from a liquid material (11) on a linear die surface wettable (12) by molten material. A seed crystal (18) is supported in a position spaced from an axis of revolution which on shaft (22) lies in the plane of wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.

Abstract translation: 从旋转表面形成单晶圆顶（14），并通过熔融材料从线性模具表面可润湿（12）上的液体材料（11）生长。 晶种（18）被支撑在与轴（22）位于可润湿表面平面中的旋转轴线间隔开的位置，晶种围绕旋转轴线旋转以产生具有预定的 曲率半径 晶种相对于生长开始的润湿表面以其一个轴线的预定取向被支撑。

公开(公告)号：JP2010037191A

公开(公告)日：2010-02-18

申请号：JP2009175676

申请日：2009-07-28

Applicant: Sumco Corp ,  Sumco Phoenix Corp ,  サムコ フェニックス コーポレイション ,  株式会社Sumco

Inventor： ORSCHEL BENNO ,  BUCZKOWSKI ANDRZEJ ,  KEARNS JOEL ,  TAKANASHI KEIICHI ,  TODT VOLKER

IPC: C30B15/22 ,  C30B29/06

CPC classification number: C30B15/22 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: PROBLEM TO BE SOLVED: To provide a method for improving performances of a crystal growth program based on the temperature gradient at the crystal growth front (crystal-melt interface) in the Czochralski process. SOLUTION: The method and apparatus for growing a semiconductor crystal include steps of pulling the semiconductor crystal from melt at a predetermined pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as, for instance, the target pull speed of the crystal or the melt gap, which determines the temperature gradient in the crystal during growth. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种基于切克劳斯基工艺中的晶体生长前沿（晶体 - 熔融界面）的温度梯度来提高晶体生长程序的性能的方法。 解决方案：用于生长半导体晶体的方法和装置包括以预定拉速从熔体拉出半导体晶体并通过组合周期性拉速与平均速度来调制拉速的步骤。 拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。 温度梯度可用于控制影响成品晶体的形态稳定性或本征材料特性的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了晶体中的温度梯度 生长。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP3734860B2

公开(公告)日：2006-01-11

申请号：JP21751395

申请日：1995-08-25

Applicant: 日本碍子株式会社

Inventor： 克宏 今井 ,  美能留 今枝 ,  承生 福田

IPC: C30B15/20 ,  G02F1/35 ,  C30B15/00 ,  C30B15/08 ,  C30B29/30 ,  G02F1/355 ,  H01S3/109

CPC classification number: C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/91 ,  Y10T117/1036 ,  Y10T117/1044

Abstract: When producing an oxide-series single crystal by continuously pulling downwardly by mu pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

公开(公告)号：JP5657219B2

公开(公告)日：2015-01-21

申请号：JP2009175676

申请日：2009-07-28

Applicant: サムコ フェニックス コーポレイション ,  サムコ フェニックス コーポレイション ,  株式会社Sumco ,  株式会社Sumco

Inventor： オルシェル ベンノ ,  オルシェル ベンノ ,  ブチコフスキー アンジェイ ,  ブチコフスキー アンジェイ ,  カーンズ ジョエル ,  カーンズ ジョエル ,  啓一 高梨 ,  啓一 高梨 ,  トッド フォルカー ,  トッド フォルカー

IPC: C30B15/22 ,  C30B29/06

CPC classification number: C30B15/22 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

公开(公告)号：JP5039696B2

公开(公告)日：2012-10-03

申请号：JP2008515642

申请日：2006-05-10

Applicant: エルケム ソウラー アクシエセルスカプ

Inventor： フリエスタッド，ケンネス

IPC: B22D23/04 ,  B22D23/00 ,  B22D27/04 ,  C01B20060101 ,  C01B33/037

CPC classification number: C30B29/06 ,  C30B11/003 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088

公开(公告)号：KR100984926B1

公开(公告)日：2010-10-01

申请号：KR1020077029880

申请日：2006-05-10

Applicant: 엘켐 솔라 에이에스

Inventor： 프리스타트,케네쓰

IPC: C30B15/10 ,  C30B35/00 ,  C30B29/06

CPC classification number: C30B29/06 ,  C30B11/003 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088

Abstract: 본 발명은 실리콘 또는 다른 물질들의 지향성 고체화를 위한 방법에 관한 것이다. 냉각된 플레이트(19)는 실리콘 용융물(18)로 낮아지고 고체 실리콘의 잉곳(29)이 아래로 고체화된다.

公开(公告)号：US20150075418A1

公开(公告)日：2015-03-19

申请号：US14551545

申请日：2014-11-24

Applicant: ATI PROPERTIES, INC.

Inventor： Matthew V. Fonte

IPC: C30B15/10 ,  C23C8/04 ,  C23C8/20 ,  C30B29/20

CPC classification number: C30B15/10 ,  B21D22/16 ,  B21D51/18 ,  C23C8/04 ,  C23C8/20 ,  C30B11/002 ,  C30B15/34 ,  C30B29/20 ,  C30B35/002 ,  Y10T117/1032 ,  Y10T117/1036

Abstract: A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the Periodic Table of the Elements. A crucible for growing crystals, the crucible comprising a body and a layer formed on at least a portion of the body, the layer being formed out of Molybdenum.

Abstract translation: 用于生长晶体的坩埚，坩埚由钼和铼形成。 用于生长晶体的坩埚，坩埚由选自元素周期表第V族的金属形成。 一种用于生长晶体的坩埚，所述坩埚包括主体和形成在所述主体的至少一部分上的层，所述层由钼形成。

公开(公告)号：US08221545B2

公开(公告)日：2012-07-17

申请号：US12221229

申请日：2008-07-31

Applicant: Benno Orschel ,  Andrzej Buczkowski ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

Inventor： Benno Orschel ,  Andrzej Buczkowski ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

IPC: C30B15/20

CPC classification number: C30B15/22 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract translation: 用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。 拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。 温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。