Charged particle beam inspection of ungrounded samples

    公开(公告)号:US11448607B2

    公开(公告)日:2022-09-20

    申请号:US16470928

    申请日:2017-12-04

    Inventor: Chiyan Kuan

    Abstract: Systems and methods are provided for dynamically compensating position errors of a sample. The system can comprise one or more sensing units configured to generate a signal based on a position of a sample and a controller. The controller can be configured to determine the position of the sample based on the signal and in response to the determined position, provide information associated with the determined position for control of one of a first handling unit in a first chamber, a second handling unit in a second chamber, and a beam location unit in the second chamber.

    MODELING METHOD FOR COMPUTATIONAL FINGERPRINTS

    公开(公告)号:US20220291590A1

    公开(公告)日:2022-09-15

    申请号:US17634309

    申请日:2020-07-09

    Abstract: A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.

    Detection of buried features by backscattered particles

    公开(公告)号:US11443915B2

    公开(公告)日:2022-09-13

    申请号:US16649975

    申请日:2018-09-21

    Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

    Method of measuring an alignment mark or an alignment mark assembly, alignment system, and lithographic tool

    公开(公告)号:US11442372B2

    公开(公告)日:2022-09-13

    申请号:US17442951

    申请日:2020-02-25

    Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.

    METROLOGY SYSTEM AND METHOD
    300.
    发明申请

    公开(公告)号:US20220283515A1

    公开(公告)日:2022-09-08

    申请号:US17637156

    申请日:2020-08-25

    Abstract: A method of determining an overlay measurement associated with a substrate and a system to obtain an overlay measurement associated with a patterning process. A method for determining an overlay measurement may be used in a lithography patterning process. The method includes generating a diffraction signal by illuminating a first overlay pattern and a second overlay pattern using a coherent beam. The method also includes obtaining an interference pattern based on the diffraction signal. The method further includes determining an overlay measurement between the first overlay pattern and the second overlay pattern based on the interference pattern.

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