IMAGE REGISTRATION SYSTEM
    291.
    发明申请
    IMAGE REGISTRATION SYSTEM 审中-公开
    图像注册系统

    公开(公告)号:WO1985002512A1

    公开(公告)日:1985-06-06

    申请号:PCT/US1984000685

    申请日:1984-05-01

    CPC classification number: H04N9/3185 H04N3/22 H04N9/3194

    Abstract: An image registration system for registering images on a screen (16). A registration pattern (28) is projected on the screen (16) as part of the image to be registered and in a fixed position in that image. Where there are multiple images to be registered with each other on a common screen (16), a sensor apparatus (18, 20) is used for each image. The sensor apparatus (18) has three photodetectors (22, 24, 26) disposed in a right angle relationship which sense the illumination of the associated registration pattern (28). The position of the registration pattern (28) on the screen (16) is determined by comparing the outputs of the three photodetectors (22, 24, 26) to each other. Difference signals (50, 52) are produced by the comparisons and are used to reposition the projected image to bring it into registration. Where multiple images are projected on a common screen (16), the sensor apparatus (18, 20) and image registration patterns are disposed on the screen and in the images respectively in particular positions so that when the associated registration pattern is in register with the associated sensor apparatus (18, 20), the images are in register with each other on the screen (16).

    FOUR-QUADRANT GATE-SIZING TECHNIQUE
    292.
    发明申请
    FOUR-QUADRANT GATE-SIZING TECHNIQUE 审中-公开
    四重门窗尺寸技术

    公开(公告)号:WO1984003950A1

    公开(公告)日:1984-10-11

    申请号:PCT/US1984000475

    申请日:1984-03-27

    CPC classification number: G01S3/7864 G01S17/66

    Abstract: A four-quadrant frame of reference (encompassing axes X and Y in Fig. 3), established with respect to a sensed target image, effectively converts the image into a composite target regardable as the union of four, quadrant-based target-segments (T1, T2, T3 and T4). Four subgates (G1, G2, G3 and G4), each established within a different reference-frame quadrant (Q1, Q2, Q3 and Q4) become in union a composite tracking gate. As the effectualization of the actual gate-sizing, the degree of conformity between the composite gate and the composite target is then optomized by optimizing the degree of conformity between the subgates and the associated target-segments.

    Abstract translation: 针对感测到的目标图像建立的四象限参考系,有效地将图像转换为可视为四个基于象限的目标段的并集的复合目标。 每个建立在不同的参考框架象限内的四个下级组合成为一个复合跟踪门。 作为实际门尺寸化的有效性,通过优化底板与相关的目标段之间的一致性程度来优化复合门与复合目标之间的一致性程度。

    DUAL FIELD OF VIEW SENSOR
    293.
    发明申请
    DUAL FIELD OF VIEW SENSOR 审中-公开
    双视场传感器

    公开(公告)号:WO1984003777A1

    公开(公告)日:1984-09-27

    申请号:PCT/US1984000428

    申请日:1984-03-16

    Abstract: A dual field of view sensor, particularly adapted for use as a forward-looking infrared night vision detector, includes a single detector (24) for receiving a light signal and developing an output electrical signal therefrom. A rotating polygon scanner (16) having a plurality of reflective facet (14) thereon receives light (12, 34) from two separate optical systems (10, 32) and directs the light onto the facets (14) of the scanner (16) at positions offset by one-half the facet angle such that the light beams alternately strike a facet and the juncture between two facets. The reflected light is then directed through a beam splitter 40 onto the detector in an alternating, interleaved sweeping motion. The beam splitter permits only one at a time of the light (12, 34) from entering the detector. In one embodiment, both optical systems include a steerable dual field of view telescope. In a second embodiment, a transparent display (60) such as an LCD panel, impresses a data image on one light beam (52) and the signals developed from that and another light beam are combined to drive a display. In a third embodiment, the two light beams represent the input to a stereoscopic viewing system, and the separate signals developed therefrom are used to drive a pair of small helmet-mounted displays for individual viewing by the wearer's left and right eyes to provide stereoscopic night vision viewing.

    Abstract translation: 特别适合用作前视红外夜视检测器的双视场传感器包括用于接收光信号并从其中显现输出电信号的单个检测器(24)。 具有多个反射小面(14)的旋转多边形扫描器(16)从两个单独的光学系统(10,32)接收光(12,34),并将光引导到扫描仪(16)的刻面(14)上, 在偏移角度的一半的位置处,使得光束交替地敲击小平面和两个面之间的接合部。 然后将反射光以交替的,交错的清扫动作引导到分束器40到检测器上。 光束分离器仅允许一次光(12,34)进入检测器。 在一个实施例中,两个光学系统包括可操纵的双视野望远镜。 在第二实施例中,诸如LCD面板的透明显示器(60)在一个光束(52)上印刷数据图像,并且从该显影器发出的信号和另一个光束被组合以驱动显示器。 在第三实施例中,两个光束代表立体观看系统的输入,并且从其开发的单独的信号用于驱动一对小型头盔安装显示器,用于由佩戴者的左眼和右眼单独观看以提供立体视觉夜景 视力观看。

    FERRITE MULTIPLEXING AND MODULATOR ASSEMBLY FOR BEACON TRACKING SYSTEM
    294.
    发明申请
    FERRITE MULTIPLEXING AND MODULATOR ASSEMBLY FOR BEACON TRACKING SYSTEM 审中-公开
    用于海狸跟踪系统的FERRITE MULTIPLEXING和调制器组件

    公开(公告)号:WO1984003360A1

    公开(公告)日:1984-08-30

    申请号:PCT/US1983002068

    申请日:1983-12-28

    CPC classification number: G01S3/325 H04J15/00

    Abstract: A modulator system (30) for converting a three-channel input microwave signal to a single-channel output microwave signal is formed of two (upper and lower) microwave sections which are joined together by a hybrid divider (94) at their inputs and by a hybrid combiner (96) at their outputs. Each of the microwave sections includes a pair of couplers (82 and 84, 88 and 90) which are joined by a Faraday rotator (86, 92). First and second microwave input signals (48, 52) are applied to a first port of the input coupler (82, 88) in each of these sections. A third microwave signal (50) is directed by the hybrid divider (94) to a second imput port in the input couplers (82, 84) of each of the microwave sections. Polarization of the third signal is vertical and is maintained through the two sections. Polarization of the first and second signals is horizontal and is maintained through the two sections. With activation of the rotator, a shift in polarization occurs resulting in appearence of the signals in both the horizontal and vertical components of an output coupler in each of the sections. The vertical component of the output couplers in each of the sections is combined by the hybrid combiner to produce the single-channel microwave signal (54). Synchronous detectors are utilized for subsequent extraction of the first and second input signals, the synchronous detectors and the Faraday rotators being driven by common sources of modulation signals wherein the rotator in one section is modulated at a rate different from the rotator in the second section.

    SELF-COMPENSATING HYDROSTATIC FLATTENING OF SEMICONDUCTOR SUBSTRATES
    295.
    发明申请
    SELF-COMPENSATING HYDROSTATIC FLATTENING OF SEMICONDUCTOR SUBSTRATES 审中-公开
    自我补偿半导体衬底的静电弛豫

    公开(公告)号:WO1984003176A1

    公开(公告)日:1984-08-16

    申请号:PCT/US1983001989

    申请日:1983-12-16

    CPC classification number: H01L21/0201 G01B11/26 H01L31/0203

    Abstract: A semiconductive substrate (1), such as a silicon wafer, is mounted on a baseplate (3), for inclusion in an optical device such as a liquid crystal light valve. An optical flat (9) presses the top surface of the silicon wafer toward the baseplate and against a ring seal (5) surrounding a fluid adhesive (7). The fluid adhesive hydrostatically distributes the force of compression to guarantee optical flatness and self-compensation for the amount fluid adhesive surrounded by the O-ring. The optical flatness of the semiconductor substrate is limited only by the flatness of the optical flat against which it is compressed. Parallel alignment of the optical flat (9), the substrate (1) and the baseplate (3) is achieved by reflecting a laser beam (20) through the semiconductive substrate and observing the interference fringes therein, while adjusting the relative alignment so as to maximize the distance between fringes.

    Abstract translation: 诸如硅晶片的半导体基板安装在基板上以包含在诸如液晶光阀的光学装置中。 光学平面将硅晶片的顶表面压向底板并且抵靠围绕流体粘合剂的O形圈密封件。 流体粘合剂可以流体分配压缩力,以保证由O形环包围的流体粘合剂的光学平面度和自我补偿。 半导体衬底的光学平面度仅受到被压缩的光学平面的平坦度的限制。 通过将激光束反射通过半导体基片并观察其中的干涉条纹,同时调整相对对准以使条纹之间的距离最大化,来实现光学平面,基底和基板的平行对准。

    METHOD OF CLEANING ARTICLES USING SUPER-CRITICAL GASES
    296.
    发明申请
    METHOD OF CLEANING ARTICLES USING SUPER-CRITICAL GASES 审中-公开
    使用超临界气体清洁文章的方法

    公开(公告)号:WO1984002291A1

    公开(公告)日:1984-06-21

    申请号:PCT/US1983001713

    申请日:1983-10-31

    CPC classification number: B08B7/0021

    Abstract: In the fabrication of a variety of articles, organic contaminants become affixed to the surfaces of these articles and must subsequently be removed. The disclosed method is effective for the removal of organic contaminants from a variety of articles, and is efficient to enable the rapid removal of such contaminants without damage to the article. The method has special utility in the cleaning of components used in aerospace applications. In the disclosed method, a structural component bearing the contaminant is contacted in a pressure vessel with a gas under super-critical conditions of temperature and pressure whereby the contaminant is absorbed by the gas. The gas, having the contaminant absorbed therein, is then purged from the vessel to obtain the cleaned component.

    Abstract translation: 在各种制品的制造中,有机污染物固定在这些制品的表面上,并随后被去除。 所公开的方法对于从各种制品中去除有机污染物是有效的,并且能够快速除去这些污染物而不损坏制品是有效的。 该方法在清洁航空航天应用中使用的部件方面具有特殊的用途。 在所公开的方法中,在超临界温度和压力条件下,将带有污染物的结构部件在压力容器中与气体接触,由此污染物被气体吸收。 然后将其中吸收污染物的气体从容器中清除以获得清洁的部件。

    SOLID PHASE EPITAXY AND REGROWTH PROCESS WITH CONTROLLED DEFECT DENSITY PROFILING FOR HETEROEPITAXIAL SEMICONDUCTOR ON INSULATOR COMPOSITE SUBSTRATES
    297.
    发明申请
    SOLID PHASE EPITAXY AND REGROWTH PROCESS WITH CONTROLLED DEFECT DENSITY PROFILING FOR HETEROEPITAXIAL SEMICONDUCTOR ON INSULATOR COMPOSITE SUBSTRATES 审中-公开
    具有控制缺陷密度分布的绝缘相复合材料的绝缘相复合材料的固相和外延工艺

    公开(公告)号:WO1984002034A1

    公开(公告)日:1984-05-24

    申请号:PCT/US1983001622

    申请日:1983-10-17

    Abstract: Method of fabricating a semiconductor on insulator composite substrate comprised of a semiconductor layer adjacent an insulator substrate, the defect density profile of the semiconductor layer being low and relatively uniform, a relatively thin region of the semiconductor layer at the semiconductor/insulator interface having a substantially greater defect density. The method comprises the steps of depositing the semiconductor layer (12a) adjacent the insulator substrate (10), amorphizing a buried portion (14) of the semiconductor layer without damaging the insulator substrate such as to release contaminants into the semiconductor layer, recrystallizing the amorphous portion of the semiconductor or layer, removing a portion of the semiconductor layer so as to expose the recrystallized layer (38), and depositing an additional semiconductor layer (40) of the recrystallized layer to provide an essentially defect free semiconductor layer of any desired thickness. The provision of semiconductor layers formed by either appropriately selecting the depth within the semiconductor layer at which the amorphization occurs and the width of the amorphized region or permitting self-annealing to occur during the amorphization, or both, having a desired high defect density and interposed between the recrystallized layer and the insulator substrate are also disclosed.

    Abstract translation: 一种制造绝缘体上半导体复合衬底的方法,包括与绝缘体衬底相邻的半导体层,所述半导体层的缺陷密度分布低且相对均匀,所述半导体/绝缘体界面处的半导体层的相对薄的区域具有基本上 更大的缺陷密度。 该方法包括以下步骤:将半导体层(12a)沉积在绝缘体衬底(10)附近,使半导体层的掩埋部分(14)非晶化,而不会损坏绝缘体衬底,以将污染物释放到半导体层中, 去除半导体层的一部分以暴露再结晶层(38),并沉积再结晶层的附加半导体层(40),以提供任何所需厚度的基本上无缺陷的半导体层 。 提供半导体层,通过适当选择发生非晶化的半导体层内的深度和非晶化区域的宽度或允许在非晶化期间发生的自退火或者两者具有期望的高缺陷密度而形成,并且插入 还公开了再结晶层和绝缘体基板之间。

    CONTROLLED POROSITY DISPENSER CATHODE
    298.
    发明申请
    CONTROLLED POROSITY DISPENSER CATHODE 审中-公开
    控制型多孔分配器阴极

    公开(公告)号:WO1984001664A1

    公开(公告)日:1984-04-26

    申请号:PCT/US1983001572

    申请日:1983-10-06

    CPC classification number: H01J1/28 H01J9/04

    Abstract: An emitter-dispenser housing (48) for a controlled porosity dispenser cathode manufactured of a single material as a unitary piece by a chemical vapor deposition process in which a configured mandrel (20) is coated with a layer of material (36 and 40) such as tungsten, for example, so that when the mandrel (20) is removed from the coating of material (36), a hollow housing (48) is formed having a side wall (36 and 40) and an end wall (42) which define a reservoir (44). In addition, intersecting strips (28 and 30) of this same material as the coating, which had been placed in the mandrel (20), extend transversely across the reservoir (44) with the edges thereof bonded by atomic-crystalline growth to the coating (36 and 40) during the chemical vapor deposition to form a unitary piece. Thereafter, an array of apertures (46) is formed in the end wall (42) of the housing by laser drilling to create an emitter-dispenser (42).

    Abstract translation: 一种用于通过化学气相沉积工艺由单一材料制成的单一材料的发射器 - 分配器壳体(48),其中所配置的心轴(20)涂覆有一层材料(36和40),例如 作为钨,例如使得当心轴(20)从材料(36)的涂层移除时,形成具有侧壁(36和40)和端壁(42)的中空壳体(48),所述侧壁 限定一个储存器(44)。 此外,已经放置在心轴(20)中的与涂层相同的材料的相交条(28和30)横向延伸穿过储存器(44),其边缘通过原子晶生长结合到涂层 (36和40),以形成整体。 此后,通过激光钻孔在壳体的端壁(42)中形成孔阵列(46)以产生发射器 - 分配器(42)。

    PROCESS FOR FORMING SULFIDE LAYERS
    299.
    发明申请
    PROCESS FOR FORMING SULFIDE LAYERS 审中-公开
    形成硫化层的方法

    公开(公告)号:WO1983004420A1

    公开(公告)日:1983-12-22

    申请号:PCT/US1983000647

    申请日:1983-05-02

    Abstract: A sulfide layer is formed on the surface of a semiconductor substrate to provide an insulator layer or an antireflective coating in devices such as infrared radiation detectors. The formation of such sulfide layers requires high temperatures or generates charged particles or high energy radiation that damage the substrate and prevent optimum electrical performance of the device. This problem is overcome by exposing the substrate (20) at low temperature to a vapor phase reactant containing a chosen metal (from chamber 26), such as dimethyl zinc, in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The sulfur atoms react with the vapor phase reactant to form the sulfide thereof, such as zinc sulfide, which deposits as a layer on the surface of the substrate (20). The neutral sulfur atoms are generated by the photochemical dissociation of a sulfur-containing precursor (from chamber 28) by radiation of a selected wavelength (from means 16). In addition, a native sulfide layer may be formed on the surface of a chosen substrate by exposing the substrate to neutral, charge-free sulfur atoms which do not damage the substrate.

    Abstract translation: 在半导体衬底的表面上形成硫化物层,以在诸如红外辐射探测器的器件中提供绝缘体层或抗反射涂层。 这种硫化物层的形成需要高温或产生带电粒子或高能量辐射,损坏基片并阻止器件的最佳电性能。 通过在低温下将基材(20)暴露于含有所选择的金属(来自室26)(例如二甲基锌)的气相反应物中,在中性无电荷的硫原子的存在下,以 避免产生将损坏基板的带电粒子和高能辐射。 硫原子与气相反应物反应形成其硫化物,例如硫化锌,其沉积为在衬底(20)的表面上的一层。 通过所选波长的辐射(从装置16)通过含硫前体(来自室28)的光化学解离产生中性硫原子。 此外,可以在所选择的衬底的表面上形成天然硫化物层,方法是将衬底暴露于不损坏衬底的中性无电荷硫原子。

    HEAT PIPE COOLING MODULE FOR HIGH POWER CIRCUIT BOARDS
    300.
    发明申请
    HEAT PIPE COOLING MODULE FOR HIGH POWER CIRCUIT BOARDS 审中-公开
    高功率电路板热管冷却模块

    公开(公告)号:WO1983003945A1

    公开(公告)日:1983-11-10

    申请号:PCT/US1983000626

    申请日:1983-04-27

    CPC classification number: H05K7/20336 F28D15/0233 F28D15/04 G12B15/02

    Abstract: A heat pipe cooling module assembly (20) for cooling electronic components (28) includes a plurality of heat pipe modules (22) comprising condenser and evaporator sections (24, 26) and working fluid therein. In a preferred embodiment, each evaporator section comprises a sandwich construction of a pair of flat outer plates (34), a pair of wick pads (36) and a separator plate (38) comprising channels extending from the evaporator section into the condenser section.

    Abstract translation: 用于冷却电子部件(28)的热管冷却模块组件(20)包括多个热管模块(22),其包括冷凝器和蒸发器部分(24,26)以及其中的工作流体。 在一个优选实施例中,每个蒸发器部分包括一对平坦外板(34),一对芯焊盘(36)和分隔板(38)的夹层结构,该隔板包括从蒸发器部分延伸到冷凝器部分的通道。

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