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    MEMS DEVICE WITH INTEGRAL PACKAGING
    291.
    发明申请
    MEMS DEVICE WITH INTEGRAL PACKAGING 失效
    具有整体封装的MEMS器件

    公开(公告)号：US20080272867A1

    公开(公告)日：2008-11-06

    申请号：US11929245

    申请日：2007-10-30

    Applicant: Michael B. Cohn ,  Ji-Hai Xu

    Inventor： Michael B. Cohn ,  Ji-Hai Xu

    IPC: H01L21/48 ,  H01H51/22

    CPC classification number: H01H59/0009 ,  B81B7/0077 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/093 ,  B81C1/00301 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch. Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.

    Abstract translation: 公开了MEMS器件及其制造方法。 在一个实施例中，微型开关包括基座组件，其包括承载接触垫的可移动结构。 基座组件被晶片刻度结合到包括激活器和信号路径的盖组件。 可移动结构在接合过程中形成的密封空腔内移动。 信号路径包括输入线和由间隙分开的输出线，当开关被去激活时，该线路防止信号通过微型开关传播。 在操作中，信号被发送到信号路径中。 当微动开关被激活时，致动器建立一个力，致动器将可移动结构的一部分朝向信号路径中的间隙向上拉，直到接触垫桥接输入线和输出线之间的间隙，从而允许 信号通过微型开关传播。 在结合之前，MEMS结构在第一晶片上退火，并且导电迹线和其它金属在第二晶片上进行退火，以允许使用不同工艺（例如不同的退火温度）分别对每个晶片进行加工。

    MEMS RF switch module including a vertical via
    293.
    发明授权
    MEMS RF switch module including a vertical via 有权
    MEMS射频开关模块包括垂直通孔

    公开(公告)号：US07170155B2

    公开(公告)日：2007-01-30

    申请号：US10606633

    申请日：2003-06-25

    Applicant: John M. Heck ,  Tsung-Kuan Allen Chou ,  Joseph S. Hayden, III

    Inventor： John M. Heck ,  Tsung-Kuan Allen Chou ,  Joseph S. Hayden, III

    IPC: H01L23/06

    CPC classification number: B81B7/007 ,  B81B2201/018 ,  H01H1/0036 ,  H01H1/5805 ,  H01L2224/16

    Abstract: An apparatus and method to provide a micro-electromechanical systems (MEMS) radio frequency (RF) switch module with a vertical via. The MEMS RF switch module includes a MEMS die coupled to a cap section. The vertical via passes through the cap section to electrically couple an RF switch array of the MEMS die to a printed circuit board (PCB). In one embodiment, the MEMS die includes a trace ring surrounding at least a portion of the RF switch array so that a signal may enter or exit the MEMS RF switch module using the vertical via without crossing the trace ring.

    Abstract translation: 提供具有垂直通孔的微机电系统（MEMS）射频（RF）开关模块的装置和方法。 MEMS RF开关模块包括耦合到盖部分的MEMS管芯。 垂直通孔穿过盖部分以将MEMS管芯的RF开关阵列电耦合到印刷电路板（PCB）。 在一个实施例中，MEMS管芯包括围绕RF开关阵列的至少一部分的迹线环，使得信号可以使用垂直通孔进入或退出MEMS RF开关模块，而不穿过迹线环。

    Switch structures or the like based on a thermoresponsive polymer
    295.
    发明申请
    Switch structures or the like based on a thermoresponsive polymer 审中-公开
    基于热响应聚合物的开关结构等

    公开(公告)号：US20060122565A1

    公开(公告)日：2006-06-08

    申请号：US11141730

    申请日：2005-05-31

    Applicant: Chee Kooi

    Inventor： Chee Kooi

    IPC: A61M5/00

    CPC classification number: B81B3/0024 ,  A61M5/16881 ,  A61M5/1723 ,  A61M2205/0266 ,  B81B2201/018 ,  B81B2201/045 ,  B81B2201/054 ,  H01H2037/008 ,  Y10T137/8242

    Abstract: Briefly, in accordance with one embodiment of the invention, a switch structure or the like such as a valve, motor, or optical switch, may be constructed based on a thermoresponsive polymer. At a first temperature the thermoresponsive polymer may be in a first volume state, and at a second temperate the thermoresponsive polymer may be in a second volume state. The change in volume of the thermoresponsive polymer may be operative to push or pull the mechanical structures of the switch, valve, motor, optical switch, and so on, to effectuate operation of the structures.

    Abstract translation: 简而言之，根据本发明的一个实施例，可以基于热能聚合物来构造诸如阀，电动机或光开关的开关结构等。 在第一温度下，热可聚合物可以处于第一体积状态，而在第二温度下，热可聚合物可以处于第二体积状态。 热反应聚合物的体积变化可以用于推动或拉动开关，阀门，电动机，光学开关等的机械结构，以实现结构的操作。

    Microelectro mechanical system switch
    296.
    发明授权
    Microelectro mechanical system switch 有权
    微电机械系统开关

    公开(公告)号：US06960971B2

    公开(公告)日：2005-11-01

    申请号：US10706106

    申请日：2003-11-13

    Applicant: Young-jun Park ,  In-sang Song ,  In-taek Han

    Inventor： Young-jun Park ,  In-sang Song ,  In-taek Han

    IPC: B81B3/00 ,  H01H59/00 ,  H01P1/10 ,  B81B7/02

    CPC classification number: B81B3/0008 ,  B81B2201/018 ,  H01H59/0009

    Abstract: Provided is a microelectro mechanical system (MEMS). The provided MEMS switch includes a substrate; a signal line formed on the substrate; a beam deformed by an electrostatic force to electrically switch with the signal line; and a spring type contact unit formed on the signal line to electrically contact the beam and elastically deformed by an external force. Thus, stability of the contact between the contact unit and the beam is improved. In particular, even when the beam or the contact unit under the beam is unbalanced, the contact unit can elastically contact the beam to obtain a stable electrical switching operation.

    Abstract translation: 提供了一种微电子机械系统（MEMS）。 所提供的MEMS开关包括基板; 形成在基板上的信号线; 通过静电力变形的电子束与信号线电开关的光束; 以及弹簧式接触单元，形成在信号线上，以电接触梁并通过外力弹性变形。 因此，提高了接触单元和梁之间的接触的稳定性。 特别地，即使当梁或梁下的接触单元不平衡时，接触单元可以弹性地接触梁以获得稳定的电开关操作。

    Multi-metal layer MEMS structure and process for making the same
    299.
    发明申请
    Multi-metal layer MEMS structure and process for making the same 有权

    公开(公告)号：US20050000932A1

    公开(公告)日：2005-01-06

    申请号：US10902984

    申请日：2004-07-30

    Applicant: Kaigham Gabriel ,  Xu Zhu

    Inventor： Kaigham Gabriel ,  Xu Zhu

    IPC: B81B3/00 ,  B81C1/00 ,  C23F1/00 ,  H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01H59/00 ,  H01L23/48 ,  H01L23/52 ,  H04R19/00 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

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