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    Method of manufacturing MEMS devices providing air gap control
    301.
    发明授权
    Method of manufacturing MEMS devices providing air gap control 有权
    制造提供气隙控制的MEMS器件的方法

    公开(公告)号：US08102590B2

    公开(公告)日：2012-01-24

    申请号：US12436059

    申请日：2009-05-05

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00

    CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

    Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

    Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

    METHODS FOR FORMING LAYERS WITHIN A MEMS DEVICE USING LIFTOFF PROCESSES
    304.
    发明申请
    METHODS FOR FORMING LAYERS WITHIN A MEMS DEVICE USING LIFTOFF PROCESSES 审中-公开
    在使用提升过程的MEMS器件中形成层的方法

    公开(公告)号：US20110058243A1

    公开(公告)日：2011-03-10

    申请号：US12946583

    申请日：2010-11-15

    Applicant: Chun-Ming Wang

    Inventor： Chun-Ming Wang

    IPC: G02B26/02 ,  H01L21/302

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

    Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

    Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications
    305.
    发明授权
    Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications 有权
    多晶硅沉积和退火工艺可实现MEMS应用的厚多晶硅膜

    公开(公告)号：US07754617B2

    公开(公告)日：2010-07-13

    申请号：US12098052

    申请日：2008-04-04

    Applicant: Thomas Kieran Nunan

    Inventor： Thomas Kieran Nunan

    IPC: H01L21/302

    CPC classification number: B81C1/00666 ,  B81B2201/025 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169

    Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.

    Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。

    Polysilicon Deposition and Anneal Process Enabling Thick Polysilicon Films for MEMS Applications
    306.
    发明申请
    Polysilicon Deposition and Anneal Process Enabling Thick Polysilicon Films for MEMS Applications 有权
    用于MEMS应用的多晶硅沉积和退火工艺使厚的多晶硅膜

    公开(公告)号：US20090042372A1

    公开(公告)日：2009-02-12

    申请号：US12098052

    申请日：2008-04-04

    Applicant: Thomas Kieran Nunan

    Inventor： Thomas Kieran Nunan

    IPC: H01L21/20

    CPC classification number: B81C1/00666 ,  B81B2201/025 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169

    Abstract: A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.

    Abstract translation: 形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近 底物。 该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。 最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长 晶体多晶硅膜。

    Fabrication of advanced silicon-based MEMS devices
    309.
    发明授权
    Fabrication of advanced silicon-based MEMS devices 有权
    先进的硅基MEMS器件的制造

    公开(公告)号：US07160752B2

    公开(公告)日：2007-01-09

    申请号：US11242960

    申请日：2005-10-05

    Applicant: Luc Ouellet ,  Robert Antaki

    Inventor： Luc Ouellet ,  Robert Antaki

    IPC: H01L21/00

    CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

    Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

    Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。

    Method of fabricating silicon-based MEMS devices
    310.
    发明授权
    Method of fabricating silicon-based MEMS devices 有权

    公开(公告)号：US07144750B2

    公开(公告)日：2006-12-05

    申请号：US10459619

    申请日：2003-06-12

    Applicant: Luc Ouellet ,  Robert Antaki

    Inventor： Luc Ouellet ,  Robert Antaki

    IPC: H01L21/00

    CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

    Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

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