公开(公告)号：US20060276040A1

公开(公告)日：2006-12-07

申请号：US11504466

申请日：2006-08-15

Applicant: Margaret Abraham

Inventor： Margaret Abraham

IPC: H01L21/302 ,  H01L21/00 ,  H01L21/31 ,  H01L21/425

CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

Abstract: A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.

公开(公告)号：US20060096691A1

公开(公告)日：2006-05-11

申请号：US10520656

申请日：2003-07-11

Applicant: Alessandra Bossi ,  Anthony Francis ,  Olena Imiriyna ,  Sergey Piletsky

Inventor： Alessandra Bossi ,  Anthony Francis ,  Olena Imiriyna ,  Sergey Piletsky

IPC: B01L3/00

CPC classification number: B01L3/502707 ,  B01L2200/147 ,  B01L2300/0816 ,  B01L2300/165 ,  B01L2300/18 ,  B01L2400/0415 ,  B01L2400/0472 ,  B01L2400/0487 ,  B01L2400/0677 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00119 ,  B81C2201/0143 ,  Y10T436/2575

Abstract: The present invention provides a microfluidic device comprising a body structure which comprises a fusible material. Selective application of energy (e.g. scanning radiation) produces and maintains a network of microchannels by fusing the material. There may be pons in fluid communication with one or more channels. The subject devices find use in a variety of electrophoretic applications, including clinical assays, high throughput screening for genomics, proteomics and pharmaceutical applications, point-of-care in vitro diagnostics, molecular genetic analysis and nucleic acid diagnostics, cell separations, and bioresearch generally.

Abstract translation: 本发明提供了一种微流体装置，其包括包含可熔材料的主体结构。 能量的选择性应用（例如扫描辐射）通过熔化材料产生并维持微通道网络。 可能存在与一个或多个通道流体连通的通风口。 主题装置可用于各种电泳应用，包括临床测定，基因组学，蛋白质组学和药物应用的高通量筛选，体外诊断点，分子遗传分析和核酸诊断，细胞分离和生物研究 。

公开(公告)号：US20060017016A1

公开(公告)日：2006-01-26

申请号：US11167617

申请日：2005-06-27

Applicant: Hendrik Tappel

Inventor： Hendrik Tappel

IPC: H01J37/08

CPC classification number: H01J37/3056 ,  B81C1/00126 ,  B81C2201/0143 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: The invention provides a method for the removal of a microscopic sample 1 from a substrate 2, comprising: performing a cutting process whereby the substrate 2 is irradiated with a beam 4 such that the sample 1 is cut out of the substrate 2, and performing an adhesion process whereby the sample 1 is adhered to a probe 3, characterized in that the cutting process, during at least part of the duration of the cutting process, is carried out by at least two beams 4, 5 simultaneously. By performing cutting with at least two beams, the sample 1 can be extracted without having to change the orientation of the substrate 2 with respect to the means that produce the beams. Both the act of working with two beams simultaneously and the attendant possibility of keeping the orientation constant provide time-savings compared to a method whereby cutting is only performed with a single beam.

Abstract translation: 本发明提供了从基板2去除微观样品1的方法，包括：进行切割处理，由此基板2被光束4照射，使得样品1从基板2切出，并执行 附着过程，其中样品1粘附到探针3，其特征在于，在切割过程的至少部分持续时间期间，切割过程由至少两个光束4,5同时进行。 通过利用至少两个光束进行切割，可以提取样品1而不必相对于产生光束的装置改变基底2的取向。 与仅使用单个光束执行切割的方法相比，同时使用两个光束的动作和保持定向常数的伴随可能性节省了时间。

公开(公告)号：US06932933B2

公开(公告)日：2005-08-23

申请号：US09821918

申请日：2001-03-30

Applicant: Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

Inventor： Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

IPC: B44C1/22 ,  B81C1/00 ,  C03C23/00 ,  C03C15/00

CPC classification number: B81C1/00492 ,  B44C1/227 ,  B44C1/228 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C23/0025

Abstract: A laser direct write method creates true three dimensional structures within photocerams using an focused pulsed ultraviolet laser with a wavelength in a weakly absorbing region of the photoceram material. A critical dose of focused laser UV light selectively exposes embedded volumes of the material for subsequent selective etching. The photoceram material exposure is nonlinear with the laser fluence and the critical dose depends on the square of the per shot fluence and the number of pulses. The laser light is focused to a focal depth for selective volumetric exposure of the material within a focal volume within the remaining collateral volumes that is critically dosed for selecting etching and batch fabrication of highly defined embedded structures.

Abstract translation: 激光直接写入方法使用在光致抗蚀剂材料的弱吸收区域中具有波长的聚焦脉冲紫外激光器在光泽内产生真正的三维结构。 聚焦激光UV光的关键剂量选择性地暴露了材料的嵌入体积，用于随后的选择性蚀刻。 光泽材料暴露是非线性的，具有激光注量，临界剂量取决于每个射流注量的平方和脉冲数。 激光被聚焦到焦点深度，用于在残留的临时体积内的焦点体积内材料的选择性体积暴露，其被批量选择用于选择高度限定的嵌入结构的蚀刻和批量制造。

公开(公告)号：US20050006224A1

公开(公告)日：2005-01-13

申请号：US10695381

申请日：2003-10-28

Applicant: Jene Golovchenko ,  Derek Stein ,  Jiali Li

Inventor： Jene Golovchenko ,  Derek Stein ,  Jiali Li

IPC: B01L3/00 ,  B81B1/00 ,  B81C1/00 ,  B81C99/00 ,  G01N27/28 ,  G01N27/416 ,  H01L21/66 ,  C23C14/00 ,  C23C14/32

CPC classification number: B81C1/00626 ,  B01L3/5027 ,  B24B37/013 ,  B81C99/004 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.

Abstract translation: 为了控制固态结构特征的物理尺寸，提供具有表面并具有结构特征的固态结构。 该结构暴露于具有第一曝光占空比的第一周期性通量的离子，其特征在于第一占空比的第一离子曝光持续时间和第一非曝光持续时间，然后在具有第二曝光占空比的第二周期通量的离子 其特征在于，对于所述第二占空比，所述第二离子曝光持续时间和第二非曝光持续时间大于所述第一非曝光持续时间，以使所述结构的材料在所述结构的结构体内包括所述结构表面在所述结构特征中的响应 到离子通量暴露基本上通过将结构的材料局部添加到特征来改变特征的至少一个物理尺寸。

公开(公告)号：US06815363B2

公开(公告)日：2004-11-09

申请号：US09927428

申请日：2001-08-09

Applicant: Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

Inventor： Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

IPC: H01L21302

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。

公开(公告)号：US06783643B2

公开(公告)日：2004-08-31

申请号：US10186105

申请日：2002-06-27

Applicant: Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

Inventor： Jene A. Golovchenko ,  Daniel Branton ,  Michael J. Aziz ,  Jiali Li ,  Derek M. Stein ,  Ciaran J. McMullan

IPC: C23C1434

CPC classification number: B81C1/00626 ,  B81C2201/0143 ,  G01N33/48721 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢   ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢   ⁢ C ⁢   ⁢ σ C , where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, T1 is number of adatoms created per incident ion, D is adatom diffusivity, &tgr;trap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of structure material, and &sgr;C is cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, structure material to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding structure material to the feature location.

Abstract translation: 具有表面的固体结构被提供并暴露于入射离子的通量F，条件是基于以下条件选择：其中C是结构表面处的移动吸附原子的浓度，r是向量表面位置，t是时间，T1 是每个入射离子产生的吸附原子数，D是吸附原子扩散系数，tautrap是在结构材料的结构表面缺陷特征下发生吸附原子湮灭之前的吸收原子的平均寿命，σC是被选择的入射离子特征的吸附原子湮灭的横截面 离子暴露条件。 离子曝光条件选择控制通过入射离子对结构表面的溅射，以在包括结构表面的结构内将结构材料转移到特征位置，以响应于离子通量暴露而产生基本上通过局部添加结构材料的特征 功能位置。

公开(公告)号：KR20210024689A

公开(公告)日：2021-03-05

申请号：KR1020217005915A

申请日：2018-03-05

Applicant: 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트

Inventor： 로만 오슈트홀트 ,  노르베르트 암브로지우스 ,  아르네 슈노어 ,  다니엘 둔커

IPC: B23K26/402 ,  B23K26/00 ,  B23K26/0622 ,  B23K26/53 ,  B23K103/00 ,  B81C1/00 ,  C03C23/00

CPC classification number: B23K26/0006 ,  B23K26/06 ,  B23K26/0624 ,  B23K26/402 ,  B23K26/53 ,  B41J2/1433 ,  B41J2/162 ,  B41J2/1626 ,  B81B1/004 ,  B81C1/00087 ,  B81C1/00103 ,  B81C1/00595 ,  C03C15/00 ,  C03C23/00 ,  C03C23/0025 ,  B23K2103/50 ,  B23K2103/54 ,  B81B2201/052 ,  B81B2201/058 ,  B81B2203/0353 ,  B81B2203/0392 ,  B81C2201/0133 ,  B81C2201/0143

Abstract: 본 발명은 투명한 또는 투과성 유리 기판 (2) 안으로 적어도 하나의 관통구멍 (1) 을 도입하기 위한 방법에 관한 것이며, 상기 유리 기판 (2) 은 전자기 방사선, 특히 레이저를 이용해 빔축 (s) 을 따라 선택적으로 변조된다. 상기 변조들이 유리 기판 (2) 안에서 빔축 (s) 을 따라, 서로 다른 특성들을 갖는 전자기 방사선에 의해, 예컨대 서로 다른 펄스 에너지에 의해, 생성됨으로써, 상기 유리 기판 (2) 안의 에칭공정이 비균질하게 서로 다른 에칭률들로 진행된다. 이를 통해, 상기 투명한 또는 투과성 재료 안에서 에칭 처리를 근거로 생기는 관통구멍 (1) 을 타겟팅하여 그리고 선택적으로 상기 변조들의 서로 다른 특성들을 통해 형성하는 그리고 예컨대 상기 관통구멍 (1) 의 원뿔각도 (α, β) 를 변화시키는 가능성이 만들어내진다.

公开(公告)号：JP6110403B2

公开(公告)日：2017-04-05

申请号：JP2014548036

申请日：2012-12-20

Applicant: ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド

Inventor： エスレ,ティエリー ,  ダラ・ピアッツァ,シルヴィオ

IPC: H03H9/19 ,  H03H9/215 ,  B81C1/00 ,  B81B3/00 ,  G04B17/06 ,  H03H3/02

CPC classification number: H03H9/19 ,  B23K26/0057 ,  B81C1/00595 ,  F21V17/02 ,  G04B17/066 ,  G04B17/345 ,  G04C3/12 ,  G04F5/063 ,  G04G17/02 ,  H01L41/0475 ,  H01L41/332 ,  H03H9/215 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C2201/0143

公开(公告)号：JP6094239B2

公开(公告)日：2017-03-15

申请号：JP2013021119

申请日：2013-02-06

Applicant: セイコーエプソン株式会社

Inventor： 五味 一博

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/3205

CPC classification number: H01L23/49827 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1645 ,  B81C1/00087 ,  H01L21/268 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/76898 ,  B81C2201/0143 ,  H01L2924/0002