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    MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE MANUFACTURING METHOD, AND MEMS INFRARED DETECTOR
    333.
    发明公开
    MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE MANUFACTURING METHOD, AND MEMS INFRARED DETECTOR 审中-公开
    MEMS双层悬浮微结构制造方法和MEMS红外探测器

    公开(公告)号：EP3296254A1

    公开(公告)日：2018-03-21

    申请号：EP16792161.8

    申请日：2016-05-10

    Applicant: CSMC Technologies Fab2 Co., Ltd.

    Inventor： JING, Errong

    IPC: B81B7/02 ,  B81C1/00

    CPC classification number: B81C1/00182 ,  B81B7/02 ,  B81B2201/0207 ,  B81C1/00 ,  B81C1/0015 ,  B81C1/00476 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/0132 ,  G01J5/20

    Abstract: An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.

    Abstract translation: 一种MEMS双层悬浮微结构制造方法，包括：提供衬底（100）; 在衬底（100）上形成第一介电层（200）; 图案化所述第一介电层（200）以制备连接到所述第一膜体（210）的第一膜体（210）和悬臂梁（220）; 在第一介电层（200）上形成牺牲层（300）; 图案化位于第一膜体（210）上的牺牲层（300）以形成用于形成支撑结构（420）的凹陷部分（310），其中第一膜体（210）暴露在凹陷的底部 分部分（310）; 在牺牲层（300）上形成第二介电层（400）; （420）连接到第一膜体（210）和第二膜体（410），图案化第二电介质层（400）以制造第二膜体（410）和支撑结构（420） ; 去除所述第一膜体下方的部分衬底，去除所述牺牲层，得到MEMS双层悬浮微结构。 另外，还公开了一种MEMS红外探测器。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    335.
    发明公开
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 审中-公开
    法达到电介质和有机材料之间具有良好的责任

    公开(公告)号：EP3052429A1

    公开(公告)日：2016-08-10

    申请号：EP14777233.9

    申请日：2014-09-15

    Applicant: Cavendish Kinetics, Inc.

    Inventor： RENAULT, Mickael

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Manufacturing method of a three-dimensional microstructure
    338.
    发明公开
    Manufacturing method of a three-dimensional microstructure 审中-公开
    用于三维微结构的制造方法

    公开(公告)号：EP2133307A2

    公开(公告)日：2009-12-16

    申请号：EP09161797.7

    申请日：2009-06-03

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Isano, Taisuke ,  Asano, Kosuke ,  Kaneda, Yasushi

    IPC: B81C1/00

    CPC classification number: B05D5/00 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2203/038

    Abstract: A method for manufacturing a three-dimensional structure (1) includes forming a first structure (20) having a relief pattern on a substrate (10), forming a sacrifice layer (30) on the first structure such that the sacrifice layer can be filled in a concave part (25) of the first structure and the sacrifice layer can cover a surface (23) of a convex part (22) of the first structure on a side opposite to the substrate, forming a second structure (40) having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

    THREE-DIMENSIONAL STRUCTURE ELEMENT AND METHOD OF MANUFACTURING THE ELEMENT, OPTICAL SWITCH, AND MICRO DEVICE
    339.
    发明授权
    THREE-DIMENSIONAL STRUCTURE ELEMENT AND METHOD OF MANUFACTURING THE ELEMENT, OPTICAL SWITCH, AND MICRO DEVICE 有权
    立体化建设元件及其制造方法元素，光开关微器件

    公开(公告)号：EP1544161B1

    公开(公告)日：2009-01-14

    申请号：EP03766675.7

    申请日：2003-07-31

    Applicant: NIKON CORPORATION

    Inventor： ISHIZUYA, Tohru, NIKON CORPORATION

    IPC: B81B3/00 ,  G02B26/08

    CPC classification number: B81B3/0072 ,  B81C2201/0108 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/3572 ,  G02B6/3584 ,  G02B6/3596 ,  Y10S438/926

    Abstract: A three-dimensional structure element having a plurality of three-dimensional structural bodies and capable of being uniformly formed without producing a dispersion in shape of the three-dimensional structural bodies, comprising a substrate (11) and the three-dimensional structural bodies (1) disposed in predetermined effective area (20) on the substrate (11); the three-dimensional structural bodies (1) further comprising space parts formed in the clearances thereof from the substrate (11) by removing sacrificing layers, the substrate (11) further comprising a dummy area (21) having dummy structural bodies (33) so as to surround the effective area (20), the dummy structural body (33) further comprising space parts formed in the clearances thereof from the substrate (11) by removing the sacrificing layers, whereby since the dummy area (21) is heated merely to approx. the same temperature as the effective area (20) in an ashing process for removing the sacrificing layers to prevent a temperature distribution from occurring in the effective area (20).

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