公开(公告)号：WO1995022168A1

公开(公告)日：1995-08-17

申请号：PCT/US1995001845

申请日：1995-02-14

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  VALONE, Steven, Michael

IPC: H01J01/30

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: A field emission electron emitter comprising an electrode of diamond and a conductive carbon, e.g., graphite, is provided.

Abstract translation: 提供了包括金刚石电极和导电碳（例如石墨）的场发射电子发射器。

公开(公告)号：WO1995007543A1

公开(公告)日：1995-03-16

申请号：PCT/US1994009762

申请日：1994-09-08

Applicant: SILICON VIDEO CORPORATION

Inventor： SILICON VIDEO CORPORATION ,  MACAULAY, John, M. ,  SPINDT, Christopher, J. ,  SEARSON, Peter, C. ,  DUBOC, Robert, M., Jr.

IPC: H01J09/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: Electron-emissive elements in area electron emitters suitable for flat-panel displays are fabricated at high packing density. The electron-emissive elements have various shapes such as filaments (30A, 30B, or 30/88D1), cones (1181 or 142D), and cone-topped pedestals (92/1021). A typical emitter contains a substrate (20) that provides structural support. A patterned lower non-insulating region (22) formed with parallel lines is provided over insulating material of the substrate. Electron-emissive filaments (30A, 30B, or 30/88D1) are formed in pores (281) extending through an insulating layer (24) furnished over the lower non-insulating region. A patterned non-insulating gate layer (34B, 40B, or 46B) is typically provided over the insulating layer to form a gated device. Charged-particle tracks (261 or 50A1/50B1) are preferably employed to define locations for electron-emissive features. Usage of charged-particle tracks enables the electron-emissive features to be quite small and spaced closely together.

Abstract translation: 适用于平板显示器的面积电子发射体中的电子发射元件以高填充密度制造。 电子发射元件具有各种形状，例如细丝（30A，30B或30 / 88D1），锥体（1181或142D）和圆锥顶座（92/1021）。 典型的发射器包含提供结构支撑的衬底（20）。 在基板的绝缘材料上设置形成有平行线的图案化的下部非绝缘区域（22）。 电子发射丝（30A，30B或30 / 88D1）形成在延伸穿过下部非绝缘区域上的绝缘层（24）的孔（281）中。 通常在绝缘层上设置图案化非绝缘栅极层（34B，40B或46B）以形成门控器件。 电荷粒子轨迹（261或50A1 / 50B1）优选用于限定电子发射特征的位置。 带电粒子轨迹的使用使得电子发射特征相当小并且间隔得很紧密。

公开(公告)号：WO1994015352A1

公开(公告)日：1994-07-07

申请号：PCT/US1993011791

申请日：1993-12-06

Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION

Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION ,  KUMAR, Nalin ,  XIE, Chenggang

IPC: H01J19/24

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625

Abstract: A flat panel display for displaying visual information includes a plurality of corresponding light-emitting anodes (130), and field-emission cathodes (170), each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes (170) including a layer of low work function material having a relatively flat emission surface of a plurality of distributed localized electron emission sites and a grid assembly (102) interposed between the corresponding anodes (130) and cathodes (170) to thereby control emission levels to the anodes from the corresponding cathodes.

Abstract translation: 用于显示视觉信息的平板显示器包括多个对应的发光阳极（130）和场发射阴极（170），每个阳极响应于来自每个相应阴极的发射而发光。 包括具有多个分布的局部电子发射部位的相对平坦的发射表面的低功函数材料层的阴极（170）和插入在相应的阳极（130）和阴极（170）之间的栅格组件（102），从而控制 从相应的阴极到阳极的排放水平。

公开(公告)号：WO1994015350A1

公开(公告)日：1994-07-07

申请号：PCT/US1993011796

申请日：1993-12-06

Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION

Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION ,  KUMAR, Nalin ,  XIE, Chenggang

IPC: H01J01/62

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J1/3042 ,  H01J9/027 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864

Abstract: A matrix addressed diode flat panel display (820) including a diode pixel structure. The flat panel display includes a cathode assembly having a plurality of cathodes (210-280), each cathode including a plurality of cathode conductive material (440) and a layer of low effective work-function material (460) deposited over the cathode conductive material and an anode assembly having a plurality of anodes (290-292), each anode including a layer of anode conductive material (410) and a cathodoluminescent material (430) deposited over the anode conductive material, the anode assembly located proximate the cathode assembly to thereby receive the charged particle emissions from the cathode assembly. The display further includes means (100) for selectively varying field emissions between the plurality of corresponding light-emitting anodes and field-emission cathodes.

Abstract translation: 一种包括二极管像素结构的矩阵寻址二极管平板显示器（820）。 平板显示器包括具有多个阴极（210-280）的阴极组件，每个阴极包括多个阴极导电材料（440）和沉积在阴极导电材料上的低有效功函数材料层（460） 以及具有多个阳极（290-292）的阳极组件，每个阳极包括沉积在阳极导电材料上的阳极导电材料层（410）和阴极发光材料（430），阳极组件位于阴极组件附近， 从而从阴极组件接收带电粒子的排放。 显示器还包括用于选择性地改变多个对应的发光阳极和场致发射阴极之间的场发射的装置（100）。

公开(公告)号：US20160203937A1

公开(公告)日：2016-07-14

申请号：US14594949

申请日：2015-01-12

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Sergey V. Baryshev ,  Sergey P. Antipov

IPC: H01J1/304 ,  H01J9/12 ,  H01J1/34 ,  H01J9/02

CPC classification number: H01J1/34 ,  H01J1/3048 ,  H01J9/025 ,  H01J9/12 ,  H01J2201/30457 ,  H01J2201/3423

Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Abstract translation: 形成场致发射体的方法包括在衬底上设置第一层。 第一层用纳米金刚石颗粒接种。 其上设置有第一层的衬底在包括氮气的气体混合物中保持在第一温度和第一压力。 将第一层暴露于微波等离子体以在第一层上形成氮掺杂的超微晶金刚石膜，其具有在约0.05原子％至约0.5原子％范围内的氮的百分比。 场发射体每平方厘米具有约1012至约1014个发射点。 也可以类似地通过在类似于场发射体的衬底上形成氮掺杂的超微晶金刚石膜，然后氢终止膜而形成光电阴极。 光电阴极对近紫外光以及可见光有反应。

公开(公告)号：US08154185B2

公开(公告)日：2012-04-10

申请号：US11704910

申请日：2007-02-12

Applicant: Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

Inventor： Wanli Yang ,  Jason D. Fabbri ,  Nicholas A. Melosh ,  Zahid Hussain ,  Zhi-Xun Shen

IPC: H01J1/13 ,  H01J1/14 ,  H01J9/04 ,  H01J9/00 ,  H01J1/30

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Abstract translation: 提供基于金刚石单层的电子发射体，优选自组装的较高的类金刚石单层。 已经证明使用这种类金刚石单层的高强度电子发射，特别是当单层由更高的金刚石组成时。 这种类金刚石单层的应用可以改变衬底的带结构，并且发射单色电子，并且高强度电子发射也可以极大地提高应用于工业和商业应用的场效应电子发射体的效率。

公开(公告)号：US20080252196A1

公开(公告)日：2008-10-16

申请号：US12093293

申请日：2006-06-28

Applicant: Yoon Ho Song ,  Jin Woo Jeong ,  Dae Jun Kim ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho Song ,  Jin Woo Jeong ,  Dae Jun Kim ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: H01J1/62

CPC classification number: G09G3/22 ,  B82Y10/00 ,  G09G2300/08 ,  H01J31/127 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

Abstract: Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.

Abstract translation: 提供了一种场致发射显示器（FED），其中场发射装置被应用于平板显示器。 FED包括：阴极板，包括基板，串联连接在基板上的第一和第二薄膜晶体管（TFT），设置在第二TFT的漏电极上的场致发射体，栅极绝缘层，具有围绕 所述场致发射体和设置在所述栅极绝缘层上的场致发射栅电极; 以及包括基板的阳极板和设置在基板上的红色，绿色和蓝色荧光体，其中阴极板和阳极板被彼此平行并相对地真空包装。 根据本发明，可以显着提高FED面板的均匀性，并且能够显着地降低TFT的固有源漏漏电流，从而可以显着提高FED的对比度。

公开(公告)号：US07306671B2

公开(公告)日：2007-12-11

申请号：US10784915

申请日：2004-02-24

Applicant: Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: C30B29/02

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, peritamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的金刚石包括四聚烷，四金刚烷，六金刚烷，七金刚烷，八甲烷，非金刚烷，十烷和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US07273598B2

公开(公告)日：2007-09-25

申请号：US10892080

申请日：2004-07-14

Applicant: Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: C30B29/04

CPC classification number: C07C4/00 ,  B82Y10/00 ,  B82Y30/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J1/3048 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L23/4334 ,  H01L23/49513 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L35/22 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, passivation films for integrated circuit devices (ICs). The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于用于集成电路器件（IC）的钝化膜。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US20050287689A1

公开(公告)日：2005-12-29

申请号：US11150207

申请日：2005-06-13

Applicant: Takashi Iwaki ,  Takeo Tsukamoto

Inventor： Takashi Iwaki ,  Takeo Tsukamoto

IPC: B01J23/89 ,  B01J37/02 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B31/02 ,  D01F9/127 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/00 ,  H01L21/28 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: Carbon fibers having superior properties are very uniformly formed on a substrate. A method for manufacturing carbon fibers is provided which has the steps of disposing laminates formed of a first catalyst material and particles containing a second catalyst material on the substrate, causing a reaction between the first and the second catalyst materials to form catalyst particles therefrom, and causing a reaction between the catalyst particles thus obtained and a raw material for the carbon fibers. As a result, the carbon fibers are formed on the substrate.

Abstract translation: 在基材上非常均匀地形成具有优异性能的碳纤维。 提供了一种制造碳纤维的方法，其具有如下步骤：将由第一催化剂材料形成的层压体和含有第二催化剂材料的颗粒设置在基板上，引起第一和第二催化剂材料之间的反应从其形成催化剂颗粒;以及 引起如此获得的催化剂颗粒与碳纤维的原料之间的反应。 结果，在基板上形成碳纤维。