公开(公告)号：US06359378B1

公开(公告)日：2002-03-19

申请号：US09772041

申请日：2001-01-29

Applicant: Donald E. Patterson ,  Keith D. Jamison

Inventor： Donald E. Patterson ,  Keith D. Jamison

IPC: H01J130

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30446

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 percent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract translation: 通过将基板放置在反应器中，加热基板并将浓度为约8％至13％的含碳气体的混合物供应到反应器，同时向气体混合物供应能量来提供电子场发射装置 在基板附近一段时间生长第一层碳基材料至厚度大于约0.5微米，随后降低含碳气体的浓度并继续生长第二层碳基材料，第二层 层比第一层厚得多。 随后从第一层去除衬底，并将电极施加到第二层。 可以在第一层生长之前对衬底的表面进行图案化以在场发射器件上产生图案化表面。 该器件是独立的，可用作各种电子器件如阴极射线管，放大器和行波管中的冷阴极。

公开(公告)号：US20020011778A1

公开(公告)日：2002-01-31

申请号：US09916159

申请日：2001-07-25

Inventor： Tianhong Zhang ,  John K. Lee ,  Behnam Moradi

IPC: H01J001/304

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30446

Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.

公开(公告)号：US20020000548A1

公开(公告)日：2002-01-03

申请号：US09939848

申请日：2001-08-27

Inventor： Guy T. Blalock ,  Sanh D. Tang ,  Zhaohui Huang

IPC: H01L029/06 ,  H01L031/0328

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30446

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Abstract translation: 一种用于从导电或半导体衬底制造场致发射体的方法。 可以在基板上形成低功函数材料层。 包括这种低功函数材料的排放尖端可能具有改进的性能。 适合于形成发射尖端的蚀刻掩模被图案化在衬底上的所需位置和其上的任何低功函数材料。 进行至少衬底的各向异性蚀刻以形成垂直柱。 然后可以在垂直列上形成牺牲层。 每个垂直柱的刻面蚀刻形成所需形状的发射尖端。 如果在形成发射尖端之前在垂直列上形成牺牲层，则牺牲层的剩余材料可用于促进去除在刻面蚀刻期间形成的任何再沉积材料。

公开(公告)号：US06310431B1

公开(公告)日：2001-10-30

申请号：US09068483

申请日：1998-05-12

Applicant: Graciela Beatriz Blanchet-Fincher ,  William Leo Holstein ,  Syed Ismat Ullah Shah ,  Shekhar Subramoney

Inventor： Graciela Beatriz Blanchet-Fincher ,  William Leo Holstein ,  Syed Ismat Ullah Shah ,  Shekhar Subramoney

IPC: H01J130

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: Annealed carbon soot is useful as an electron field emitter. Field emitting cathodes made up of annealed carbon soot attached to the surface of a substrate are also provided. The field emitters and field emitter cathodes are useful in vacuum electronic devices, flat panel computer and television displays, emission gate amplifiers, klystrons and lighting devices.

Abstract translation: 退火碳烟炭可用作电子场发射体。 还提供了由附着在基板表面上的退火碳烟组成的场发射阴极。 场发射极和场发射极阴极可用于真空电子设备，平板电脑和电视显示器，发射门放大器，速调管和照明装置。

公开(公告)号：US20010005111A1

公开(公告)日：2001-06-28

申请号：US09771861

申请日：2001-01-29

Inventor： Donald E. Patterson ,  Keith D. Jamison

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30446

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes.

Abstract translation: 通过将基板放置在反应器中，加热基板并将浓度约为8％至13％的含碳气体的混合物供应给反应器，同时向混合物中提供能量来提供电子场发射装置， 靠近衬底的气体一段时间，以将第一层碳基材料生长至大于约0.5微米的厚度，随后降低含碳气体的浓度并继续生长第二层碳基材料， 第二层比第一层厚得多。 随后从第一层去除衬底，并将电极施加到第二层。 可以在第一层生长之前对衬底的表面进行图案化以在场发射器件上产生图案化表面。 该器件是独立的，可用作各种电子器件如阴极射线管，放大器和行波管中的冷阴极。

公开(公告)号：US6144145A

公开(公告)日：2000-11-07

申请号：US73340

申请日：1998-05-06

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30446 ,  H01J2201/319

Abstract: A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel. Emission from these more resistive emitter tip materials may be optionally enhanced with the addition of low work function impurities such as alkali metals enabling more stable devices while still permitting low turn-on voltages. Methods of making the emitter are also disclosed.

Abstract translation: 公开了一种用于场致发射器件的高性能新型电子发射体材料。 本发明的高性能电子发射体材料可以包括高Cr和SiO混合物。 该材料可以形成为高纵横比，低功函数尖端，保持其形状，从而使风险和电子散射问题的闪现最小化，同时允许高水平的制造工艺灵活性，并最小化薄膜应力。 可以将一种或多种作为导电氧化物或将形成导电氧化物的杂质添加到Cr-SiO组合物中，使得可以在净氧化下保持净低功函数发射极。 一类半导体和导电金属氧化物包括本发明的另一个实施方案。 这些材料包括Cr，Mo，Ni，Fe和Sc的氧化物，其对于在像素内的发射体中期望改善的电子发射弱化的应用具有期望的电流发射特性。 可以通过添加低功函杂质例如碱金属来增加这些更电阻的发射极尖端材料的发射，从而使得能够实现更稳定的器件同时仍然允许低导通电压。 还公开了制造发射极的方法。

公开(公告)号：US6054801A

公开(公告)日：2000-04-25

申请号：US112080

申请日：1998-07-08

Applicant: Charles E. Hunt ,  Andrei G. Chakhovskoi

Inventor： Charles E. Hunt ,  Andrei G. Chakhovskoi

IPC: H01J1/30 ,  C25B3/00 ,  C25B11/12 ,  H01J1/304 ,  H01J1/13

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: A field emission cathode is provided comprising an emissive member formed of a porous foam carbon material. The emissive member has an emissive surface defining a multiplicity of emissive edges.

Abstract translation: 提供场致发射阴极，其包括由多孔泡沫碳材料形成的发射构件。 发射构件具有限定多个发射边缘的发射表面。

公开(公告)号：US5852303A

公开(公告)日：1998-12-22

申请号：US731349

申请日：1996-10-11

Applicant: Jerome J. Cuomo ,  Seong I. Kim

Inventor： Jerome J. Cuomo ,  Seong I. Kim

IPC: G09G3/22 ,  H01J1/304 ,  H01L29/06

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J2201/30446

Abstract: A composition of matter in the form of an amorphous matrix having cesium dispersed therein is disclosed. The composition is capable of cold cathode emission, thus emitting electrons at wide range of temperatures, including room temperature. The matrix can be formed from amorphous diamond, diamond-like carbon, and other materials as well. Methods of making an amorphous matrix using single and multi-ion beam techniques are also disclosed.

Abstract translation: 公开了一种其中分散有铯的无定形基体形式的物质组合物。 该组合物能够进行冷阴极发射，从而在包括室温在内的宽温度范围内发射电子。 基体可以由无定形金刚石，类金刚石碳和其他材料形成。 还公开了使用单离子束和多离子束技术制造无定形基质的方法。

公开(公告)号：US5201681A

公开(公告)日：1993-04-13

申请号：US848727

申请日：1992-03-09

Applicant: Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

Inventor： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30446

Abstract: A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.

Abstract translation: 通过在电子发射装置中通过在电压施加电极和被电子发射电子发射的电子与电子发射电极发射的锥形部分之间施加电压来照射电子的方法。 电压施加电极形成为与电子发射电极相对以在其间夹有绝缘层和靶。 在电子发射操作完成之后，供给在电子发射操作期间被电子发射损失的电子发射电极的电荷。

公开(公告)号：WO2012096499A3

公开(公告)日：2012-10-18

申请号：PCT/KR2012000241

申请日：2012-01-10

Applicant: UNIV KOREA RES & BUS FOUND ,  LEE CHEOL JIN ,  SHIN DONG HOON

Inventor： LEE CHEOL JIN ,  SHIN DONG HOON

IPC: H01J1/30

CPC classification number: H01J1/316 ,  B82Y20/00 ,  H01J2201/30446 ,  H01J2201/30469

Abstract: Described is a horizontal field emission device in which electrons are emitted in the direction parallel to a substrate. An electron-emitting material is formed on a support portion, the thickness of which extends to a predetermined height with respect to the substrate, such that the electron-emitting material is oriented in one direction parallel to the substrate. An anode corresponding to the electron-emitting material is formed on the other side of the substrate.

Abstract translation: 描述了其中电子在平行于衬底的方向上发射的水平场发射器件。 电子发射材料形成在支撑部分上，其厚度相对于衬底延伸到预定高度，使得电子发射材料在平行于衬底的一个方向上取向。 对应于电子发射材料的阳极形成在衬底的另一侧上。