公开(公告)号：US5747918A

公开(公告)日：1998-05-05

申请号：US567867

申请日：1995-12-06

Applicant: Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

Inventor： Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

IPC: H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.

Abstract translation: 公开了一种用于场发射显示装置的新型和有利的阴极结构。 给定像素包括在支撑体上的多个间隔开的发射体。 给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。 作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。 这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。 我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层 身体。 还公开了制备根据本发明的阴极的方法。

公开(公告)号：US5723954A

公开(公告)日：1998-03-03

申请号：US422094

申请日：1995-04-14

Applicant: Stephen E. Sampayan

Inventor： Stephen E. Sampayan

IPC: H01J1/312 ,  H01J11/04

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/306

Abstract: A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Abstract translation: 混合发射器利用由快速去除的铁电材料产生的电场。 将平面薄膜金刚石发射体的发射特性与铁电体组合减轻了与两种类型的发射体相关的当前技术问题，并且提供了出现微波发电所需类型的稳健，极长寿命，高电流密度的阴极，加速器技术 并显示应用程序。 这种新的混合发射器容易制造，并且不易受到与微结构场发射极技术相关的相同故障的影响。 独立地确定局部电极几何形状和电场，以实现最佳的运输和亮度保持。 由于在铁电体上产生大量的表面电荷，所发射的电子具有显着的能量，因此消除了在发射平板显示器中对专用荧光体的要求。

公开(公告)号：US5709577A

公开(公告)日：1998-01-20

申请号：US361616

申请日：1994-12-22

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Applicants have discovered methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Specifically, applicants have discovered that electron emitters comprising ultra-fine (5-10,000 nm) diamond particles heat-treated by a hydrogen plasma, can produce electron emission current density of at least 0.1 mA/mm.sup.2 at extremely low electric fields of 0.5-1.5 V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. Emitters are preferably fabricated by suspending the ultra-fine diamond particles, preferably in the nanometer size range, in an aqueous solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, and then subjecting the coated substrate to a plasma of hydrogen, preferably at temperatures above 300.degree. C. for a period of 30 minutes or longer. The resulting emitters show excellent emission properties such as extremely low turn-on voltage, good uniformity and high current densities. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 申请人已经发现使用经过处理以提高其在极低电场下电子发射能力的市售金刚石颗粒来制造电子发射体的方法。 具体地，申请人已经发现，包含由氢等离子体热处理的超细（5-10,000nm）金刚石颗粒的电子发射体可在0.5-1.5的极低电场下产生至少0.1mA / mm 2的电子发射电流密度 V /亩。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 优选地，通过将​​优选在纳米尺寸范围的超细金刚石颗粒悬浮在水溶液中，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，然后对涂覆的基材 至氢的等离子体，优选在高于300℃的温度下持续30分钟或更长时间。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5703435A

公开(公告)日：1997-12-30

申请号：US653729

申请日：1996-05-23

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/00 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/00 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00 ,  H01J2329/8625 ,  Y10T428/292

Abstract: A field emission cathode for use in flat panel displays is disclosed comprising a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also disclosed along with the use of the cathode to form a fluorescent light source.

Abstract translation: 公开了一种用于平板显示器的场发射阴极，其包括一层导电材料和一层非晶金刚石膜，其作为低有效功函数材料，沉积在导电材料上以形成发射位置。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还公开了阴极形成计算机屏幕的使用以及阴极的使用以形成荧光光源。

公开(公告)号：US5698934A

公开(公告)日：1997-12-16

申请号：US695441

申请日：1996-08-12

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/8625

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract translation: 根据本发明，通过将发射体材料设置在绝缘基板上，将掩模粒子施加到发射极材料，在掩模颗粒和发射体材料上施加绝缘膜和栅极导体膜，并将颗粒除去，制成场致发射器件 揭示孔径随机分布到发射体材料。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。

公开(公告)号：US5659224A

公开(公告)日：1997-08-19

申请号：US484444

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/00 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/00 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00 ,  H01J2329/8625 ,  Y10T428/292

Abstract: A display device for use in conjunction with a computer system includes a cathode having a layer of conductive material and a layer of low-effective work function material deposited over the conductive material wherein the low-effective work function material has an emission surface comprising a plurality of distributed localized electron emission sites. The emission sites may have electrical properties which are discontinuous from each other. The emission surface may be relatively flat.

Abstract translation: 与计算机系统一起使用的显示装置包括具有导电材料层的阴极和沉积在导电材料上的低效功函数材料层，其中低效功函数材料具有包含多个 的分布式局部电子发射位点。 发射部位可以具有彼此不连续的电特性。 发射表面可以相对平坦。

公开(公告)号：US5637950A

公开(公告)日：1997-06-10

申请号：US331458

申请日：1994-10-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

公开(公告)号：US5629579A

公开(公告)日：1997-05-13

申请号：US486631

申请日：1995-06-07

Applicant: Steven M. Zimmerman

Inventor： Steven M. Zimmerman

IPC: H01J9/02 ,  H01J21/10

CPC classification number: H01J21/105 ,  H01J9/025 ,  H01J2201/30457

Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

Abstract translation: 本发明一般涉及一种新的集成真空微电子器件（VMD）及其制造方法。 真空微电子器件需要几种独特的三维结构：尖锐的场发射尖端，尖端在真空环境中的控制栅格结构内的精确对准以及用于收集尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的VMD设备或其他电子设备。

公开(公告)号：US5628659A

公开(公告)日：1997-05-13

申请号：US427464

申请日：1995-04-24

Applicant: Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

Inventor： Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

IPC: H01J9/02 ,  H01J1/30 ,  H01J9/42

CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.

Abstract translation: 一种系统和方法可用于制造场致发射器件，其中发射极材料（例如铜）沉积在已沉积在衬底上的电阻层上。 使用两个离子束源。 第一离子束源指向诸如钼的靶材料，用于将钼溅射到发射极材料上。 第二离子束源用于蚀刻发射体材料以产生锥体或微尖端。 然后将诸如无定形金刚石的低功函数材料沉积在微尖端上。

公开(公告)号：US5616368A

公开(公告)日：1997-04-01

申请号：US381375

申请日：1995-01-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Wei Zhu

IPC: H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  B05D5/00 ,  B01J3/06 ,  H05H1/00

CPC classification number: H01J9/025 ,  H01J23/06 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: In accordance with the present invention, a field emission device is made by pre-activating ultra-fine diamond particles before applying them to the device substrate. This initial pre-activation increases manufacturing speed and reduces cost and reduces potential damage to the device substrate from exposure to high temperature hydrogen plasma.

Abstract translation: 根据本发明，通过在将超细金刚石颗粒施加到器件衬底之前预激活来制造场致发射器件。 这种初始预激活增加了制造速度并且降低了成本并减少了暴露于高温氢等离子体对器件衬底的潜在损害。