公开(公告)号：US06417605B1

公开(公告)日：2002-07-09

申请号：US09159245

申请日：1998-09-23

Applicant: James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

Inventor： James J. Hofmann ,  John K. Lee ,  David A. Cathey ,  Glen E. Hush

IPC: H01J1304

CPC classification number: H01J3/022 ,  H01J9/241 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device. The method includes the formation of radiation blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract translation: 用于稳定有源矩阵场发射器件中的阈值电压的装置和方法。 该方法包括在FED的阴极发光显示屏和形成在FED的基板之间的半导体结之间形成辐射阻挡元件。

公开(公告)号：US06404113B1

公开(公告)日：2002-06-11

申请号：US09487671

申请日：2000-01-20

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J130

CPC classification number: H01J1/3044 ,  H01J2201/319 ,  H01J2329/00

Abstract: Semiconductor layers are formed on a substrate, and an insulating film is formed on the semiconductor layers. On the insulating film is formed a gate electrode, which has emitter holes formed therein. In the emitter holes are formed emitters, which are provided with emitter electrodes via the semiconductor layers. The emitters are grouped into a plurality of emitter groups each having at least one emitter. The emitters of each of the emitter groups are connected to each of the semiconductor layers. Common electrodes are formed across the semiconductor layers via the insulating film. Thereby, a field emission type cold cathode element is obtained which has nonlinear characteristics of providing a low resistance in normal operation and a high resistance upon discharges.

Abstract translation: 在衬底上形成半导体层，在半导体层上形成绝缘膜。 在绝缘膜上形成有在其中形成发射孔的栅电极。 在发射极孔中形成发射体，其经由半导体层设置有发射极电极。 发射器被分组成多个发射极组，每个具有至少一个发射极。 每个发射极组的发射极连接到每个半导体层。 通过绝缘膜跨越半导体层形成公共电极。 由此，得到具有在正常工作时提供低电阻和放电时的高电阻的非线性特性的场发射型冷阴极元件。

公开(公告)号：US20020042241A1

公开(公告)日：2002-04-11

申请号：US10012615

申请日：2001-12-12

Inventor： David S. Y. Hsu

IPC: H01J009/24

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US20020036452A1

公开(公告)日：2002-03-28

申请号：US09739739

申请日：2000-12-20

Inventor： Masakazu Muroyama ,  Ichiro Saito ,  Kouji Inoue ,  Takao Yagi

IPC: H01J001/00

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/319

Abstract: A cold cathode field emission device comprising (a) a cathode electrode formed on a supporting substrate, and (b) a gate electrode which is formed above the cathode electrode and has an opening portion, and further comprising (c) an electron emitting portion composed of a carbon film formed on a surface of a portion of the cathode electrode which portion is positioned in a bottom portion of the opening portion.

Abstract translation: 一种冷阴极场发射器件，包括：（a）形成在支撑衬底上的阴极电极，和（b）形成在所述阴极电极上并具有开口部分的栅电极，并且还包括（c）电子发射部分， 形成在阴极电极的一部分表面上的碳膜，该部分位于开口部分的底部。

公开(公告)号：US06356250B1

公开(公告)日：2002-03-12

申请号：US09640826

申请日：2000-08-16

Applicant: David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

Inventor： David A. Cathey ,  Glen E. Hush ,  Manny K. F. Ma ,  Craig M. Dunham ,  David A. Zimlich

IPC: G09G328

CPC classification number: H01J31/127 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/92

Abstract: A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.

Abstract translation: 场发射显示器包括耦合到发射极衬底和提取栅极的静电放电保护电路。 在优选实施例中，静电放电电路包括在网格部分和第一参考电位之间或在行线和第二参考电位之间反向偏置的二极管。 二极管提供电流路径来放电静电压，从而防止在发射极组和提取栅之间保持高电压差。 因此，二极管可防止发射极组以可能损坏或破坏发射极组的高速率发射电子。 在一个实施例中，二极管直接连接在网格部分和行线之间。 在一个实施例中，二极管形成在承载网格部分的绝缘层中。 在另一个实施例中，二极管被集成到发射器衬底中。

公开(公告)号：US06344378B1

公开(公告)日：2002-02-05

申请号：US09260231

申请日：1999-03-01

Applicant: Ji Ung Lee ,  John Lee ,  Benham Moradi

Inventor： Ji Ung Lee ,  John Lee ,  Benham Moradi

IPC: H01L21337

CPC classification number: H01L29/78618 ,  H01J9/025 ,  H01J2201/319

Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

Abstract translation: 本发明包括场效应晶体管，场发射装置，薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例，场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域，与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层，所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面，化学机械抛光使栅极与沟道区域自对准。 根据另一方面，场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。

公开(公告)号：US06333598B1

公开(公告)日：2001-12-25

申请号：US09478899

申请日：2000-01-07

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J162

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US6087193A

公开(公告)日：2000-07-11

申请号：US241976

申请日：1994-05-12

Applicant: Henry F. Gray

Inventor： Henry F. Gray

IPC: H01J3/02 ,  H01J7/44 ,  H01J9/02 ,  H01J21/10 ,  H01L21/00

CPC classification number: H01J3/022 ,  H01J21/105 ,  H01J7/44 ,  H01J9/025 ,  H01J2201/319

Abstract: A non-power generating current limiting device such as a field effect transistor is provided to output a regulated current in dependence upon a control voltage. An electron field emitter is connected to a drain or output of the non-power generating current limiting device to receive the regulated current. A tip of the electron field emitter emits electrons towards a collector anode. An extractor gate can be provided between the electron field emitter and the collector anode to control the rate of electron emission from the electron field emitter. Because the non-power generating current limiting device regulates the current to the electron field emitter, a maximum current output of the electron field emitter is limited to the regulated current from the voltage controlled current source. The electron field emitter is thus protected from destruction due to excess current. The non-power generating current limiting device can also be used to modulate electron emission from the field emitter.

Abstract translation: 提供诸如场效应晶体管的非发电电流限制装置以根据控制电压输出调节电流。 电子场发射器连接到非发电限流装置的漏极或输出端，以接收调节电流。 电子场发射器的尖端向集电极发射电子。 可以在电子场发射器和集电极之间提供提取器栅极，以控制来自电子场发射体的电子发射速率。 由于非发电电流限制装置调节到电场发射极的电流，所以电子发射极的最大电流输出被限制为来自压控电流源的调节电流。 因此，电子场发射体由于过电流而被保护免受破坏。 非发电电流限制装置也可用于调制来自场致发射体的电子发射。

公开(公告)号：US6074887A

公开(公告)日：2000-06-13

申请号：US937527

申请日：1997-09-27

Applicant: Jong Duk Lee ,  Donghwan Kim

Inventor： Jong Duk Lee ,  Donghwan Kim

IPC: H01J1/30 ,  H01J9/02 ,  H01L27/06 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01L27/0617 ,  H01J2201/319

Abstract: The present invention is directed to fabricating a MOSFET-controlled FEA, in which the emitter array and the cathode electrode are separated and connected to each other by a MOSFET, the cathode electrode and the n-well beneath the emitter array thereby being used as a source and a drain of the MOSFET.

Abstract translation: 本发明涉及制造MOSFET控制的FEA，其中发射极阵列和阴极电极通过MOSFET分离并彼此连接，阴极电极和发射极阵列下方的n阱被用作 MOSFET的源极和漏极。

公开(公告)号：US6031322A

公开(公告)日：2000-02-29

申请号：US878766

申请日：1997-06-19

Applicant: Hisashi Takemura ,  Masayuki Yoshiki

Inventor： Hisashi Takemura ,  Masayuki Yoshiki

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/319

Abstract: A field emission cold cathode has a plurality of emitters in a group for each gate electrode and a serial resistance layer divided into a plurality resistance layer sections each corresponding to one of the emitters. The resistance layer is divided by a deep trench filled with an insulator layer or conductive layer forming a P-N junction between the same and the resistance layer section. A linear voltage-current characteristic is obtained by a stable resistance of the resistance layer section to prevent a short-circuit failure between the emitter and the gate electrode.

Abstract translation: 场致发射冷阴极具有用于每个栅电极的组中的多个发射体和被分成多个电阻层部分的串联电阻层，每个电阻层部分对应于一个发射极。 电阻层被填充有绝缘体层的深沟槽或在其之间形成P-N结的导电层和电阻层部分分开。 通过电阻层部分的稳定电阻来获得线性电压 - 电流特性，以防止发射极和栅电极之间的短路故障。