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    PROPER USE NETWORK FOR MEDICAL SUPPLIES BASED ON GENE INFORMATION
    34.
    发明专利
    PROPER USE NETWORK FOR MEDICAL SUPPLIES BASED ON GENE INFORMATION 审中-公开

    公开(公告)号：JP2003196403A

    公开(公告)日：2003-07-11

    申请号：JP2001399412

    申请日：2001-12-28

    Applicant: NEW IND RES ORGANIZATION

    Inventor： AZUMA JUNICHI ,  MIZUNO SEISHI ,  TAKEBE MASAHITO ,  ISHIMURA FUMIHIRO

    IPC: G06F17/30 ,  G06F19/18 ,  G06Q50/00 ,  G06Q50/10 ,  G06Q50/22 ,  G06F17/60

    Abstract: PROBLEM TO BE SOLVED: To provide a gene information utilization system, capable of supplying medical information based on the gene information to a user, and preventing leakage of personal gene information of the user to a third party. SOLUTION: In a database 30, identification information and medical support information are stored in association with each other so that the medical support information corresponding to the identification information can be retrieved and read out. When the identification information is input by an input part 23 of a terminal 20, a control part 11 of a server 10 retrieves the database 30 to detect the medical support information corresponding to the input identification information. The detected medical support information is output from an output part 24 of the terminal 20. COPYRIGHT: (C)2003,JPO

    SURFACE TREATMENT METHOD FOR Mg ALLOY PRODUCT AND Mg ALLOY PRODUCT WITH HIGHLY CORROSION RESISTANT FILM FORMED
    35.
    发明专利
    SURFACE TREATMENT METHOD FOR Mg ALLOY PRODUCT AND Mg ALLOY PRODUCT WITH HIGHLY CORROSION RESISTANT FILM FORMED 审中-公开

    公开(公告)号：JP2003193259A

    公开(公告)日：2003-07-09

    申请号：JP2001392916

    申请日：2001-12-25

    Applicant: NEW IND RES ORGANIZATION

    Inventor： TSUBAKINO HARUSHIGE ,  YAMAMOTO ATSUYUKI

    IPC: C23C22/57 ,  C22C23/02 ,  C22C23/04 ,  C23C22/68

    Abstract: PROBLEM TO BE SOLVED: To improve the corrosion resistance and recycling properties of an Mg alloy by surface treatment. SOLUTION: An Mg alloy having a composition containing, as alloy elements, one or more kinds selected from 0.0001 to 10% Al, 0.0001 to 10% Zn, 0.0001 to 1% Mn, and 0.0001 to 1% Si, and the balance Mg with inevitable impurities is immersed into an aqueous solution having a composition containing, as chemical components, each substance of 1 to 300 g sodium chloride, 1 to 400 g magnesium chloride, 0.00001 to 0.1 g magnesium hydroxide, and 0.001 to 500 g sodium hydroxide expressed in terms of mass in 1 L of water, and the balance water with inevitable impurities for 10 s to 36 ks, and is thereafter dried, is heated in the air, and is held at 573 to 873 K for 10 s to 36 ks. COPYRIGHT: (C)2003,JPO

    MACHINING METHOD OF Si SEMICONDUCTOR FINE STRUCTURE DUE TO ION BEAM IMPLANTATION LITHOGRAPHY OF INORGANIC MULTILAYER RESIST AND INTEGRATED CIRCUIT, DEVICE, AND MICROMACHINE COMPONENT THEREBY
    36.
    发明专利
    MACHINING METHOD OF Si SEMICONDUCTOR FINE STRUCTURE DUE TO ION BEAM IMPLANTATION LITHOGRAPHY OF INORGANIC MULTILAYER RESIST AND INTEGRATED CIRCUIT, DEVICE, AND MICROMACHINE COMPONENT THEREBY 审中-公开

    公开(公告)号：JP2003179031A

    公开(公告)日：2003-06-27

    申请号：JP2001377075

    申请日：2001-12-11

    Applicant: NEW IND RES ORGANIZATION

    Inventor： KANEKO TADAAKI ,  ASAOKA YASUSHI ,  SANO NAOKATSU

    IPC: G03F7/20 ,  B81C1/00 ,  H01L21/302 ,  H01L21/3065

    Abstract: PROBLEM TO BE SOLVED: To provide an ion beam fine machining method for forming a fine circuit pattern used for a quantum device on an Si substrate surface without forming any mask for dry etching. SOLUTION: On the surface of an Si wafer substrate 1, an Al layer 2 and an Si amorphous layer 3 are formed, and then a metal ion 6 is implanted onto the surface of the Si amorphous layer 3 through a mask 5. After that, the mask 5 is removed for implanting a metal ion 9. A surface natural oxide film is selectively substituted for SiO 2 7 or is generated under the presence of a surface natural oxide film 4 that is formed on the surface of the Si amorphous layer 3 or oxygen molecule radiation, and further ions are implanted. As a result, after Al x O y 8 is produced on the surface of the Al layer 2, dry etching is made in one atom layer unit by bromide, and the surface natural oxide film other than a portion that is substituted for SiO 2 and Al x O y 8, the Si amorphous layer, the Al layer, and one portion of the Si wafer substrate are removed. COPYRIGHT: (C)2003,JPO

    GAS AMPLIFICATION TYPE X-RAY IMAGING DETECTOR AND GAS AMPLIFICATION TYPE X-RAY IMAGING DETECTION METHOD
    37.
    发明专利
    GAS AMPLIFICATION TYPE X-RAY IMAGING DETECTOR AND GAS AMPLIFICATION TYPE X-RAY IMAGING DETECTION METHOD 审中-公开

    公开(公告)号：JP2003149346A

    公开(公告)日：2003-05-21

    申请号：JP2001350386

    申请日：2001-11-15

    Applicant: NEW IND RES ORGANIZATION

    Inventor： HATTORI TADASHI ,  SATO KAZUMICHI

    IPC: G01T1/18 ,  G01T1/20 ,  H01J31/49 ,  H01J47/06 ,  H01L27/14

    Abstract: PROBLEM TO BE SOLVED: To provide a gas amplification type X-ray imaging detector allowing stable gas amplification, having a high position resolution and hardly damaged by electric discharge, and a gas amplification type X-ray imaging detecting method. SOLUTION: This gas amplification type X-ray imaging detector 1 is composed of a micro gas chamber 2 causing electron doubling and electric discharge between an anode 11 and a cathode 12 with electrons generated by the collision of radiation photon and inert gas, as seeds, and a detecting means 3 for detecting the electrons amplified by the micro gas chamber 2. The micro gas chamber 2 is formed of X-ray lithography by laminating substrates 13, 14 with a plurality of through holes 5 and conductive materials to be the anode 11 or cathode 12 on both faces, in the adjusted state of the through holes 5 and installing them on a glass substrate with a fluorescent material 15, or the fluorescent material 15 and a fluorescent material burning protective film 26 formed on the surface. The part emitting light by the collision of the electrons amplified by the micro gas chamber, against the fluorescent material is directly detected by the detecting means 3.

    JUNCTION CAPACITY EVALUATION METHOD AND JUNCTION CAPACITY MEASUREMENT APPARATUS OF SEMICONDUCTOR
    38.
    发明专利
    JUNCTION CAPACITY EVALUATION METHOD AND JUNCTION CAPACITY MEASUREMENT APPARATUS OF SEMICONDUCTOR 审中-公开

    公开(公告)号：JP2003115514A

    公开(公告)日：2003-04-18

    申请号：JP2001310782

    申请日：2001-10-05

    Applicant: NEW IND RES ORGANIZATION

    Inventor： KITA TAKASHI

    IPC: G01N21/00 ,  G01N21/27 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To accurately evaluate a junction capacity in each junction interface based on electric field strength by accurately measuring the field strength in each junction interface of a semiconductor device based on a PR spectrum in a junction capacity evaluation method, and to provide a junction capacity measuring apparatus of a semiconductor. SOLUTION: Data in an energy region exceeding a band gap is subjected to Fourier transformation among data on a photoreflectance signal from a semiconductor device. Thereby, the data is separated to different frequency band regions W1, W2 obtained from each junction interface of a semiconductor device. Thereby, data obtained from one junction interface is prevented from being used for the measurement of electric field at another junction interface. Therefore, the electric field strength in each junction interface of a semiconductor can be measured accurately, and the junction capacity in each junction interface can be evaluated accurately based on the electric field strength.

    POSITION CONTROL METHOD IN WALKING DRIVE
    39.
    发明专利
    POSITION CONTROL METHOD IN WALKING DRIVE 失效

    公开(公告)号：JP2002341941A

    公开(公告)日：2002-11-29

    申请号：JP2001150604

    申请日：2001-05-21

    Applicant: NEW IND RES ORGANIZATION

    Inventor： SHAMOTO EIJI

    IPC: G01B21/00 ,  B23P19/00 ,  B23Q5/28 ,  G05D3/00 ,  H01L21/68

    Abstract: PROBLEM TO BE SOLVED: To provide a mechanism to exactly decide the position of a table in a 'walking drive' device to transport the table by alternately supporting the table by repeating contact and isolation on the rear surface of the table in which driving parts of A and B groups repeat a 'transport' operation in the transport direction. SOLUTION: The position of the table is controlled by: providing many stepping stones regularly deployed with a pitch equal to or smaller than the stroke of elements for transport of the driving parts on the lower surface of the table with which the contact blocks of the driving parts are brought into contact; and driving the table while two or more driving parts maintain the contact with the stepping stones.

    X-RAY MICRO-BEAM GENERATING DEVICE
    40.
    发明专利
    X-RAY MICRO-BEAM GENERATING DEVICE 失效

    公开(公告)号：JP2002168997A

    公开(公告)日：2002-06-14

    申请号：JP2000364879

    申请日：2000-11-30

    Applicant: NEW IND RES ORGANIZATION

    Inventor： MATSUI JUNJI ,  TSUSAKA YOSHIYUKI

    IPC: G01N23/207 ,  G21K1/00 ,  G21K1/06

    Abstract: PROBLEM TO BE SOLVED: To generate an X-ray micro-beam of a sufficiently small diameter and small diffusion angle using asymmetric reflection crystals. SOLUTION: Asymmetric reflection crystals 18a and 18b are disposed to be capable of contracting the diameter and diffusion angle of an incidental X-ray beam in a horizontal direction, and asymmetric reflection crystals 18c and 18d are disposed to be capable of contracting the diameter and diffusion angle of the X-ray beam in a vertical direction. The asymmetric reflection crystals 18a and 18b (18c and 18d) are supported to be capable of simultaneously rotating around a first support shaft 42, and the asymmetric reflection crystal 18b (18d) is supported to be capable of solely rotating around a second support shaft 43.

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