公开(公告)号：JP6326487B2

公开(公告)日：2018-05-16

申请号：JP2016521846

申请日：2014-06-20

Applicant: ストレイティオ, インコーポレイテッド ,  STRATIO, INC.

Inventor： ジェヒュン リー ,  ヨル ナ ,  ヨンシク キム ,  ウーシク ジュン

IPC: H01L27/14 ,  H01L31/10

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/1804 ,  H04N5/361 ,  H04N5/378

公开(公告)号：EP3528288A1

公开(公告)日：2019-08-21

申请号：EP18214935.1

申请日：2014-06-20

Applicant: Stratio, Inc.

Inventor： LEE, Jae, Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L27/146

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

公开(公告)号：EP3111466A4

公开(公告)日：2017-03-29

申请号：EP16750355

申请日：2016-05-23

Applicant: STRATIO INC

Inventor： LEE JAE HYUNG ,  NA YEUL ,  KIM YOUNGSIK ,  JUNG WOO-SHIK

IPC: H01L21/20 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/02636 ,  H01L21/30604

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.

Abstract translation: 用于去除在选择性外延生长工艺期间形成的核的方法包括在具有一个或多个掩模层的衬底上外延生长第一组一个或多个半导体结构。 在所述一个或多个掩模层上形成第二组多个半导体结构。 该方法还包括在第一组一个或多个半导体结构上形成一个或多个保护层。 第二组多个半导体结构的至少一个子集从一个或多个保护层暴露。 该方法进一步包括，在第一组一个或多个半导体结构上方形成一个或多个保护层之后，蚀刻多个半导体结构的第二组的至少该子集。

公开(公告)号：US20200256731A1

公开(公告)日：2020-08-13

申请号：US16859941

申请日：2020-04-27

Applicant: Stratio

Inventor： Jae Hyung LEE ,  Youngsik KIM ,  Yeul NA ,  Juhyung KANG

IPC: G01J3/14 ,  G01J3/02 ,  G02B5/04 ,  G01J3/28 ,  G02B27/10

Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.

公开(公告)号：US10281327B2

公开(公告)日：2019-05-07

申请号：US15821591

申请日：2017-11-22

Applicant: Stratio

Inventor： Jae Hyung Lee ,  Youngsik Kim ,  Yeul Na ,  Juhyung Kang

IPC: G01J3/14 ,  G01J3/02 ,  G02B27/10 ,  G02B5/04 ,  G01J3/28

Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.

公开(公告)号：US10109662B2

公开(公告)日：2018-10-23

申请号：US14967262

申请日：2015-12-11

Applicant: Stratio Inc.

Inventor： Jae Hyung Lee ,  Yeul Na ,  Youngsik Kim ,  Woo-Shik Jung

IPC: H01L27/146 ,  H01L31/113 ,  H04N5/378 ,  H01L31/18

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

公开(公告)号：US20180094976A1

公开(公告)日：2018-04-05

申请号：US15821591

申请日：2017-11-22

Applicant: Stratio

Inventor： Jae Hyung LEE ,  Youngsik Kim ,  Yeul Na ,  Juhyung Kang

IPC: G01J3/14 ,  G01J3/02 ,  G01J3/28 ,  G02B5/04 ,  G02B27/10

CPC classification number: G01J3/14 ,  G01J3/0289 ,  G01J3/2803 ,  G02B5/04 ,  G02B5/045 ,  G02B27/1013

Abstract: An apparatus for analyzing light includes an input aperture for receiving light; a first set of one or more lenses configured to relay light from the input aperture; and a prism assembly configured to disperse light from the first set of one or more lenses. The prism assembly includes a plurality of prisms that includes a first prism, a second prism that is distinct from the first prism, and a third prism that is distinct from the first prism and the second prism. The first prism is mechanically coupled with the second prism and the second prism is mechanically coupled with the third prism. The apparatus also includes a second set of one or more lenses configured to focus the dispersed light from the prism assembly; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals.

公开(公告)号：US20160099372A1

公开(公告)日：2016-04-07

申请号：US14967262

申请日：2015-12-11

Applicant: Stratio Inc.

Inventor： Jae Hyung Lee ,  Yeul Na ,  Youngsik Kim ,  Woo-Shik Jung

IPC: H01L31/113 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/1136 ,  H01L27/14616 ,  H01L31/1804 ,  H04N5/378

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

Abstract translation: 用于感测光的装置包括掺杂有第一类型的掺杂剂的第一半导体区域和掺杂有第二类型的掺杂剂的第二半导体区域。 第二半导体区域位于第一半导体区域的上方。 该器件包括栅绝缘层; 一个门，一个源头和一个排水沟。 第二半导体区域具有朝向栅极绝缘层定位的顶表面和与第二半导体区域的顶表面相对定位的底表面。 第二半导体区域具有包括第二半导体区域的顶表面的上部和包括第二半导体区域的底表面并与上部相互排斥的下部。 第一半导体区域与第二半导体区域的上部和下部部分接触。

公开(公告)号：EP3528288B1

公开(公告)日：2020-08-26

申请号：EP18214935.1

申请日：2014-06-20

Applicant: Stratio, Inc.

Inventor： LEE, Jae, Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L27/146

公开(公告)号：EP3608944A1

公开(公告)日：2020-02-12

申请号：EP19188206.7

申请日：2016-05-23

Applicant: Stratio, Inc.

Inventor： LEE, Jae Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-shik

IPC: H01L21/20 ,  H01L21/308

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.