公开(公告)号：KR1020120063716A

公开(公告)日：2012-06-18

申请号：KR1020100124812

申请日：2010-12-08

Applicant: (재)한국나노기술원

Inventor： 전동환 ,  김창주 ,  양창재 ,  성호근 ,  강호관 ,  신찬수 ,  박원규 ,  고철기

IPC: H01L21/20 ,  H01L33/00

Abstract: PURPOSE: A method for manufacturing a semiconductor device for substrate reuse is provided to improve productivity of the semiconductor device by securing two thin film structures with one separation process. CONSTITUTION: A first device layer(320) is formed at one side of a substrate(300). The first device layer comprises a transparent electrode layer and a p-type electrode. A second device layer(340) is formed at the other side of the substrate. A first carrier substrate(360) is welded to the first device layer. A second carrier substrate(380) is welded to the second device layer. The first device layer and the substrate are separated and the second device layer and the second device layer are separated through a laser lift off method.

Abstract translation: 目的：提供一种用于制造用于衬底再利用的半导体器件的方法，以通过用一个分离工艺固定两个薄膜结构来提高半导体器件的生产率。 构成：第一器件层（320）形成在衬底（300）的一侧。 第一器件层包括透明电极层和p型电极。 第二器件层（​​340）形成在衬底的另一侧。 第一载体衬底（360）焊接到第一器件层。 第二载体衬底（380）焊接到第二器件层。 分离第一器件层和衬底，并通过激光剥离法分离第二器件层和第二器件层。