公开(公告)号：KR101182584B1

公开(公告)日：2012-09-18

申请号：KR1020100114128

申请日：2010-11-16

Applicant: 삼성전자주식회사

Inventor： 지원수 ,  김추호 ,  오성훈 ,  김민환 ,  신범석

IPC: H01L33/48

CPC classification number: H01L22/14 ,  G01R31/2601 ,  G01R31/2635 ,  H01L33/48 ,  H01L2933/0033 ,  H01L2933/005 ,  Y10T29/51

Abstract: 본 발명의 실시예에 따른 LED 패키지의 제조 장치는, 복수의 LED 패키지가 리드프레임에 설치되어 어레이로 배열된 리드프레임 상태의 LED 패키지 어레이를 가열하는 가열부; 상기 가열부에 의해 가열된 LED 패키지 어레이에 전압 또는 전류를 인가하여 상기 LED 패키지 어레이 내의 각 LED 패키지의 동작 상태를 검사하는 테스팅부; 및 상기 테스팅부에 의한 검사 결과, 양품으로 판정된 LED 패키지 혹은 불량품으로 판정된 LED 패키지만을 상기 리드프레임으로부터 커팅하여 제거하는 커팅부를 포함한다.

公开(公告)号：KR100309871B1

公开(公告)日：2001-10-29

申请号：KR1019990006093

申请日：1999-02-24

Applicant: 삼성전자주식회사

Inventor： 박영준 ,  이호성 ,  김민환 ,  김경철

IPC: C07D265/34

CPC classification number: C07D215/56

Abstract: 본발명은우수한항균작용을가지는광학활성 (-)피리도벤즈옥사진카르복실산유도체및 그의약제학상허용되는염의신규한제조방법에관한것이다. 본발명의광학활성 (-)피리도벤즈옥사진카르복실산유도체(I) 및그의약제학상허용되는염은하기에표시된화합물(V)로부터, 염기존재하에서적당한반응성물질과의치환반응에의하여화합물(IV)를얻고, 화합물(IV)를유기극성용매및 염기존재하에서고리화반응시켜화합물(III)를제조한다음, 화합물(III)을유기극성용매및 염기존재하에치환된피페라진유도체와선택적인치환반응을시켜화합물(II)를생성시킨후, 화합물(II)를메탈하이드록사이드와유기용매를사용하여, 가수분해및 고리화반응시켜제조하였다. 본발명의방법은저가의 4-클로로-5-플루오로-2-할로-3-니트로벤조산유도체로부터제조된출발물질을사용하며, 반응공정이간단하여경제적으로광학활성의 (-)피리도벤즈옥사진카르복실산유도체의대량생산에적용할수 있다.

公开(公告)号：KR1020000056672A

公开(公告)日：2000-09-15

申请号：KR1019990006202

申请日：1999-02-25

Applicant: 삼성전자주식회사

Inventor： 김민환 ,  이호성 ,  박영준 ,  김경철

IPC: C07D498/04

Abstract: PURPOSE: A method for preparing optically active quinolonecarboxylic acid derivative represented by formula (1) useful in an antibiotic is provided which purifies the compound easily and is suitable for mass-production by simplifying the reaction steps. Also, the method has a high selectivity to 4-position substitution. CONSTITUTION: A method for preparing optically active quinolonecarboxylic acid derivative comprises the steps of: substituting 2,3,4,5-tetrafluorobenzonitrile of formula (II) with piperazine derivative at 0-100°C in the presence of base and organic solvent to obtain a compound of formula (III); carrying out reformatsky reaction of the compound of formula (III) and alkylbromoacetate in the presence of active zinc and tetrahydrofuran; converting to a compound of formula (IV) by adding an acid; reacting the compound of formula (IV) with N,N-dimethylformamidedimethylacetal in an inert solvent followed by removing the solvent; reacting with (L)-alaninol in the presence of an alcohol solvent to obtain a compound of formula(V); carrying out the cyclization of the compound of formula (V) in the presence of polar solvent and base to obtain a compound of formula (VI); and refluxing the compound of formula (VI) using 1.0-3.0 equivalent of metalhydroxide and an organic solvent.

Abstract translation: 目的：提供一种制备用于抗生素的由式（1）表示的光学活性喹诺酮羧酸衍生物的方法，该方法通过简化反应步骤容易地纯化化合物并适于批量生产。 此外，该方法对4-位取代具有高选择性。 构成：制备光学活性喹诺酮羧酸衍生物的方法包括以下步骤：用碱和有机溶剂在0-100℃下用哌嗪衍生物代替式（II）的2,3,4,5-四氟苄腈得到 式（III）的化合物; 在活性锌和四氢呋喃的存在下进行式（III）化合物和溴乙酸烷基酯的重新格式反应; 通过加入酸转化为式（Ⅳ）化合物; 使式（Ⅳ）化合物与N，N-二甲基甲酰胺二甲基缩醛在惰性溶剂中反应，然后除去溶剂; 在醇溶剂存在下与（L） - 丙氨醇溶剂反应得到式（Ⅴ）化合物; 在极性溶剂和碱的存在下进行式（V）化合物的环化，得到式（VI）的化合物; 并使用1.0-3.0当量的金属氢氧化物和有机溶剂回流式（VI）的化合物。

公开(公告)号：KR100123742B1

公开(公告)日：1997-12-01

申请号：KR1019940001451

申请日：1994-01-27

Applicant: 삼성전자주식회사

Inventor： 김민환

IPC: H04N7/18

Abstract: A apparatus and method for controlling the door phone using by a TV and remote controller whereby the visitor is displayed on the monitor and a master of house controls the door phone using the remote controller. The said apparatus consist of a interphone having a function of the bell and the transmitter-receiver, a signal generating means, a camera generating the picture information by the control signal of the signal generating means, the TV monitor displaying the image signal and the remote controller controlling the monitor and having a function of the transmission-reception.

Abstract translation: 一种用于通过电视机和遥控器控制门电话的装置和方法，其中访客显示在监视器上，房屋的主人使用遥控器控制门电话。 所述装置包括具有钟形和发射机 - 接收机功能的对讲机，信号发生装置，通过信号发生装置的控制信号产生图像信息的相机，显示图像信号的电视监视器和遥控器 控制器控制监视器并具有发送接收的功能。

公开(公告)号：KR2019890011996U

公开(公告)日：1989-07-15

申请号：KR2019870020217

申请日：1987-11-20

Applicant: 삼성전자주식회사

Inventor： 김민환 ,  엄영구 ,  전병관

IPC: H04N5/268

公开(公告)号：KR2019860008412U

公开(公告)日：1986-07-24

申请号：KR2019840014437

申请日：1984-12-29

Applicant: 삼성전자주식회사

Inventor： 김민환

IPC: G06F1/04

公开(公告)号：KR200027580Y1

公开(公告)日：1984-12-28

申请号：KR2019820009391

申请日：1982-11-25

Applicant: 삼성전자주식회사

Inventor： 김민환

IPC: G06F3/02

公开(公告)号：KR101800371B1

公开(公告)日：2017-11-23

申请号：KR1020110050929

申请日：2011-05-27

Applicant: 삼성전자주식회사

Inventor： 김민환

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66681 ,  H01L29/00 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/66689 ,  H01L29/7816

Abstract: 반도체장치는제1 영역및 제2 영역이정의된기판, 상기제1 영역및 상기제2 영역을가로지르도록, 제1 방향으로연장된게이트라인, 상기제1 영역내에형성된제1 소오스영역, 상기제1 영역내에, 상기제1 소오스영역아래에형성되고제1 폭을갖는제1 바디영역, 상기제1 영역내에, 상기제1 바디영역아래에형성되고상기제1 폭보다넓은제2 폭을갖는제1 웰, 상기제2 영역내에, 제3 폭을갖는제2 바디영역, 및상기제2 영역내에, 상기제2 바디영역아래에형성되고상기제3 폭보다좁은제4 폭을갖는제2 웰을포함한다.

Abstract translation: 该半导体器件包括第一区域和被限定的第二区域，所述基板，所述第一区域和形成在所述栅极线的第一源极区域，第一区域在第一方向上延伸穿过所述第二区域，所述 在第一区域，它形成在第一本体区下面首先形成在第一源极区的下方，在所述第一区域，所述的具有宽的第二宽度比所述第一宽度大的第一宽度的第一主体区域 的第一阱，在区域中的第二第二阱，在第二主体区域和所述具有第三宽度第二区域，在第二主体区域下形成具有窄的第四宽度比第三宽度大 它包括。

公开(公告)号：KR1020130110483A

公开(公告)日：2013-10-10

申请号：KR1020120032504

申请日：2012-03-29

Applicant: 삼성전자주식회사

Inventor： 이응규 ,  장재준 ,  장훈 ,  김민환 ,  배성렬 ,  장동은

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66681

Abstract: PURPOSE: A semiconductor device generates electric field distribution without degrading the breakdown voltage properties of a transistor by arranging one end of a gate electrode on an epitaxial layer between first and second drift regions. CONSTITUTION: A second conductivity type buried layer (110) is formed on a first conductivity type substrate (100). A second conductivity type epitaxial layer (120) is formed on the buried layer. A first conductivity type pocket well (130) and a first drift region (140) overlap within the epitaxial layer. A second drift region (150) is separated from the first drift region. A first conductivity type body region (160) is formed within the pocket well. A gate electrode (190) is disposed on the epitaxial layer between the first and second drift regions.

Abstract translation: 目的：半导体器件通过在第一和第二漂移区域之间的外延层上布置栅电极的一端来产生电场分布而不降低晶体管的击穿电压特性。 构成：在第一导电型基板（100）上形成第二导电型掩埋层（110）。 在掩埋层上形成第二导电型外延层（120）。 第一导电类型的凹穴（130）和第一漂移区（140）在外延层内重叠。 第二漂移区域（150）与第一漂移区域分离。 第一导电类型体区域（160）形成在口袋内。 栅电极（190）设置在第一和第二漂移区之间的外延层上。

公开(公告)号：KR1020120132231A

公开(公告)日：2012-12-05

申请号：KR1020110050929

申请日：2011-05-27

Applicant: 삼성전자주식회사

Inventor： 김민환

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66681 ,  H01L29/00 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/66689 ,  H01L29/7816

Abstract: PURPOSE: A semiconductor device is provided to delay the on of a parasitic NPN transistor by forming a path in which a current flows. CONSTITUTION: A P-type well(150) with a fish-bone antenna shape is formed on a substrate. A body region is extended in a vertical direction of the P-type well. A source region(180) is formed in the body region. A gate line is extended in a vertical direction of the P-type well. A body contact region(175) is extended in the vertical direction of the P-type well in the body region.

Abstract translation: 目的：提供一种半导体器件，通过形成电流流动的路径来延迟寄生NPN晶体管的导通。 构成：在基板上形成具有鱼骨形天线形状的P型孔（150）。 身体区域在P型井的垂直方向上延伸。 源区域（180）形成在身体区域中。 栅极线在P型阱的垂直方向上延伸。 身体接触区域（175）在身体区域中的P型井的垂直方向上延伸。