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公开(公告)号：KR1020040051201A
公开(公告)日：2004-06-18
申请号：KR1020020079087
申请日：2002-12-12
Applicant: 삼성전자주식회사
Inventor： 김영남
IPC: H01L21/68
Abstract: PURPOSE: A vacuum tweezer for transferring wafers is provided to be capable of stably transferring wafers for preventing neighboring wafers from being scratched in wafer vacuum adsorption. CONSTITUTION: A vacuum tweezer for transferring a wafer is provided with a handle(110), a vacuum line(112) connected with the lower portion of the handle, and a head part(120) prolonged from the handle for adsorbing the first wafer. At this time, the head part has the first and second surface. The vacuum tweezer further includes a gas jet part for jetting gas onto the second wafer opposite to the second surface, so that the gas jet part is capable of preventing the second wafer from contacting the head part. Preferably, the gas jet part includes a gas line(114) connected to the lower portion of the handle, a gas path(114a) connected with the gas line in the handle, and a gas jet port. Preferably, nitrogen gas is used as the gas.
Abstract translation: 目的：提供用于转移晶片的真空镊子，以便能够稳定地转移晶片以防止相邻晶片在晶片真空吸附中被划伤。 构成：用于传送晶片的真空镊子设置有手柄（110），与手柄的下部连接的真空线（112）和从手柄延伸以吸附第一晶片的头部（120）。 此时，头部具有第一和第二表面。 真空镊子还包括用于将气体喷射到与第二表面相对的第二晶片上的气体喷射部，使得气体喷射部能够防止第二晶片接触头部。 优选地，气体喷射部分包括连接到手柄下部的气体管线（114），与手柄中的气体管线连接的气体通道（114a）和气体喷射口。 优选使用氮气作为气体。
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公开(公告)号：KR1020040048541A
公开(公告)日：2004-06-10
申请号：KR1020020076410
申请日：2002-12-03
Applicant: 삼성전자주식회사
IPC: H01L27/108
Abstract: PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent the fall-down phenomenon of lower storage nodes in spite of the increase of height by connecting the upper portions of the lower storage nodes with each other and carrying out predetermined processes on the lower storage nodes. CONSTITUTION: A plurality of cylinder type storage nodes(250b) are formed on a semiconductor substrate(200). At this time, the upper portions of the storage nodes are connected with each other. A dielectric layer(270) is formed along the upper surface of the resultant structure. The first conductive layer(275) is formed on the resultant structure. Then, the storage nodes are isolated from each other by removing the connecting portions of the storage nodes.
Abstract translation: 目的：提供一种用于形成半导体器件的电容器的方法，以通过将下部存储节点的上部彼此连接并执行预定处理来防止低层存储节点的下降现象，尽管高度增加 在较低的存储节点上。 构成：在半导体衬底（200）上形成有多个筒状存储节点（250b）。 此时，存储节点的上部彼此连接。 沿所得结构的上表面形成电介质层（270）。 在所得结构上形成第一导电层（275）。 然后，通过去除存储节点的连接部分，将存储节点彼此隔离。
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公开(公告)号：KR100410990B1
公开(公告)日：2003-12-18
申请号：KR1020010008480
申请日：2001-02-20
Applicant: 삼성전자주식회사
IPC: H01L21/3205
CPC classification number: H01L23/528 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
Abstract translation: 一种半导体器件及其制造方法，其产生高可靠性和高制造成品率。 该半导体器件包括具有彼此间隔开的多个金属线图案的金属线层和在金属线层下方的至少一个底层，其中两个相邻金属线图案之间的间隔具有足够的宽度以防止裂缝 发生在一个或多个底层。 通过在与两个相邻金属线图案之间的间隔足够距离的情况下在平行于两个相邻金属线图案之间的间隔的方向上设置狭缝，也可以防止下层的破裂。
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公开(公告)号：KR1020010068726A
公开(公告)日：2001-07-23
申请号：KR1020000000783
申请日：2000-01-08
Applicant: 삼성전자주식회사
Inventor： 김영남
IPC: H01L21/02
Abstract: PURPOSE: A grating of a clean room for a semiconductor is provided to reduce inconvenience according to maintaining cost and change by changing only a grating panel when changing a grating composed of the grating frame and a grating panel. CONSTITUTION: The grating of a clean room for a semiconductor includes a grating frame(100) and a grating panel(200). The grating frame forms the outer block of the grating. The grating panel, made of a transparent material, is formed inside of the grating frame and formed of a flexible material or a transparent material.
Abstract translation: 目的：提供用于半导体的洁净室的光栅，以便在改变由光栅框架和光栅面板组成的光栅时，通过仅改变光栅面板来保持成本和改变来减少不便。 构成：用于半导体的洁净室的光栅包括光栅框架（100）和光栅面板（200）。 光栅框架形成光栅的外部块。 由透明材料制成的格栅面板形成在光栅框架的内部并由柔性材料或透明材料形成。
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公开(公告)号：KR100224650B1
公开(公告)日：1999-10-15
申请号：KR1019920007287
申请日：1992-04-29
Applicant: 삼성전자주식회사
IPC: H01L29/76
Abstract: 본 발명은 듀얼게이트를 갖는 MOS디바이스의 P형 폴리게이트에서의 붕소이온의 침투를 억제하는 반도체장치의 제조방법에 관한 것으로, P형 게이트를 갖는 반도체장치의 제조방법에 있어서, 상기 P형 게이트는 반도체기판상에 옥시나이트라이드층을 형성하고 그 위에 비정질 실리콘층과 폴리실리콘층을 연속으로 형성한 후 상기 옥시나이트라이드층과 비정질실리콘층 및 폴리실리콘층을 게이트패턴으로 패터닝한 다음 붕소 또는 붕소화합물을 주입하여 형성하는 것을 특징으로 하며 반도체 디바이스의 안정화를 도모한다.
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Patent Agency Ranking
公开(公告)号：KR1019990065682A
公开(公告)日：1999-08-05
申请号：KR1019980001080
申请日：1998-01-15
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: 본 발명은 반도체장치 제조공정에 사용되는 특정대상물 표면에 존재하는 불순물을 애노드전극에서 방출되는 X-선을 사용하여 용이하게 분석할 수 있는 반도체장치 제조용 분석장치에 관한 것이다.
본 발명은, 분석대상물 상에 X-선을 주사하는 애노드전극이 구비되는 반도체장치 제조용 분석장치에 있어서, 상기 애노드전극은 애노드전극 몸체와 체결수단에 의해서 상기 애노드전극 몸체를 포함하며 상기 애노드전극 몸체에 연결된 교체용 애노드전극으로 이루어지는 것을 특징으로 한다.
따라서, 애노드전극의 교체에 소요되는 경비를 절약할 수 있고, 애노드전극의 세정에 소요되는 시간을 절약할 수 있는 효과가 있다.-
公开(公告)号：KR2019970052809U
公开(公告)日：1997-09-08
申请号：KR2019960002135
申请日：1996-02-12
Applicant: 삼성전자주식회사
Inventor： 김영남
IPC: H01L21/205
Abstract: TiN 장벽층증착시에필요한산소를공급하여 TiN 막질의장벽특성을향상시킬수 있는물리적기상증착장치가개시된다. 본고안은티타늄나이트라이드박막형성에사용되는물리적기상증착(Physical Vapor Depositio) 장치에있어서, 상기티타늄나이트라이드막질의장벽특성향상을위하여, 상기 PVD 챔버에필요한산소가스를순간적으로공급할수 있는산소가스공급수단을설치한것을특징으로한다.
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公开(公告)号：KR1020080069325A
公开(公告)日：2008-07-28
申请号：KR1020070006886
申请日：2007-01-23
Applicant: 삼성전자주식회사
IPC: H01L21/66 , H01L21/027
CPC classification number: H01L22/12 , G01N21/956 , G03F7/70625
Abstract: A method for determining an error of a pattern thickness measuring device is provided to measure thickness of a pattern accurately by obtaining a step profile of the pattern and comparing a first noise of a maximum peak region to a second noise of a minimum peak region for judging the error of the pattern thickness measuring device. A method for determining an error of a pattern thickness measuring device comprises the steps: moving a tip of the pattern thickness measuring device along a surface of the pattern(S100); measuring atomic force transmitted from the pattern to the tip and obtaining a step profile of the pattern(S200); and comparing a first noise of a maximum peak region with a second noise of a minimum peak region and judging the error of the pattern thickness measuring device(S300).
Abstract translation: 提供了一种用于确定图案厚度测量装置的误差的方法，通过获得图案的阶梯轮廓并将最大峰值区域的第一噪声与最小峰值区域的第二噪声进行比较来精确测量图案的厚度，以便判断 图案厚度测量装置的误差。 用于确定图案厚度测量装置的误差的方法包括以下步骤：沿着图案的表面移动图案厚度测量装置的尖端（S100）; 测量从图案传递到尖端的原子力，并获得图案的台阶轮廓（S200）; 以及将最大峰值区域的第一噪声与最小峰值区域的第二噪声进行比较并判断图案厚度测量装置的误差（S300）。
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公开(公告)号：KR100846098B1
公开(公告)日：2008-07-14
申请号：KR1020060098212
申请日：2006-10-10
Applicant: 삼성전자주식회사
IPC: H01L21/02
CPC classification number: H01L22/20 , G01N21/9501 , H01L22/12
Abstract: 결함 검사 조건 설정 방법에 있어서, 샘플의 레이저 강도 맵을 획득한다. 상기 레이저 강도 맵을 면적 스캐닝(area scanning)하여, 평균 레이저 강도를 획득한다. 그런 다음, 상기 평균 레이저 강도를 기초로 검사 조건을 설정한다. 따라서, 검사 장비에 설정된 레이저 파워는 검사자들에 상관없이 항상 일정한 값이 되므로, 검사 장비의 결함 검출 신뢰도가 대폭 향상된다.
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