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公开(公告)号：KR1020120035841A
公开(公告)日：2012-04-16
申请号：KR1020110060795
申请日：2011-06-22
Applicant: 삼성전자주식회사
CPC classification number: Y02E10/50 , H01B5/14 , H01B1/00 , H01B1/04 , H01B5/00 , H01L31/00 , H01L31/04
Abstract: PURPOSE: A transparent electrode including doped graphene, a manufacturing method thereof, a display device including the same, and a solar cell are provided to reduce a surface resistance of a transparent electrode without the degradation of transmittance by coating a p-dopant on the graphene. CONSTITUTION: Graphene is formed on at least one surface of a substrate. The graphene is coated with p-dopant. The p-dopant is inorganic acid with molecular weight over 120. Carbon atoms included in the inorganic acid form a single bond. A change ratio of transmittance before and after doped graphene is about 0.5% or less.
Abstract translation: 目的：提供包括掺杂石墨烯的透明电极，其制造方法，包括该方法的显示装置和太阳能电池，以通过在石墨烯上涂覆p掺杂剂来降低透明电极的表面电阻而不会降低透射率 。 构成：在基材的至少一个表面上形成石墨烯。 石墨烯涂有p-掺杂剂。 p-掺杂剂是分子量超过120的无机酸。无机酸中所含的碳原子形成单键。 掺杂石墨烯前后透光率的变化率约为0.5％以下。
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公开(公告)号：KR1020110061909A
公开(公告)日：2011-06-10
申请号：KR1020090118450
申请日：2009-12-02
Applicant: 삼성전자주식회사
CPC classification number: H01B1/04 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/194 , H01L29/1606 , H01L29/167 , H01L51/002
Abstract: PURPOSE: A graphene doped by dopant and a device using the same are provided to form transparent electrode, in which penetration and conductivity are bettered, and electrode which is substitution of various metal electrode by controlling work function of graphen with p-doping or n-doping. CONSTITUTION: The graphene doped by dopant and a device using the same include a organic dopant and a inorganic dopant. The organic dopant is selected from the group consisting of ionicity liquid, acids compound, and organic molecule system compound. The organic dopant is selected from the p- dopant group consisting of NO2BF4, NOBF4, NO2SbF6, HCl, H2PO4, CH3COOH, H2SO4, HNO3, dichlorodicyanoquinone, oxone, dimyristoyl phosphatidylinositol, and trifluoromethane sulfonimide. The inorganic dopant is selected from the p- dopant group consisting of HPtCl4, auCl3, HAuCl4, agOTfs, agNO3, H2PdCl6 Pd (OAc) 2, and Cu (CN) 2.
Abstract translation: 目的：提供由掺杂剂掺杂的石墨烯和使用其的装置，以形成透明电极，其中穿透和导电性更好，以及通过控制p掺杂或n-掺杂的石墨烯的功函数代替各种金属电极的电极， 掺杂。 构成：由掺杂剂掺杂的石墨烯和使用其的器件包括有机掺杂剂和无机掺杂剂。 有机掺杂剂选自离子性液体，酸性化合物和有机分子体系化合物。 有机掺杂剂选自由NO 2 BF 4，NOBF 4，NO 2 SbF 6，HCl，H 2 PO 4，CH 3 COOH，H 2 SO 4，HNO 3，二氯二氰基醌，丁酮，二肉豆蔻酰磷脂酰肌醇和三氟甲磺酰亚胺组成的p-掺杂剂组。 无机掺杂剂选自由HPtCl4，auCl3，HAuCl4，agOTfs，agNO3，H2PdCl6 Pd（OAc）2和Cu（CN）2组成的p-掺杂剂组。
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公开(公告)号：KR1020110014446A
公开(公告)日：2011-02-11
申请号：KR1020090072116
申请日：2009-08-05
Applicant: 삼성전자주식회사
IPC: C01B31/02
CPC classification number: C01B31/0446 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/182 , C01B32/184 , C01B32/194 , C01B2204/22 , H01J1/304 , H01J2201/30461 , H01J2329/0449 , Y10T428/24802 , Y10T428/24851 , Y10T428/265 , Y10T428/30 , Y10T428/31678 , Y10T428/31786
Abstract: PURPOSE: A graphene material, and a producing method thereof are provided to easily produce graphene with the large area on a substrate, and to directly form the graphene without an intermediate layer. CONSTITUTION: A graphene material comprises graphene(40) combined with one side of a substrate(10) without wrinkles on more than 90% of the area of the substrate. The graphene has the peak rate of the D band/G band less than 0.5, when measuring with the Raman spectrum. The graphene material additionally includes a graphite catalyst layer(20) on the graphene.
Abstract translation: 目的：提供石墨烯材料及其制造方法，以容易地制造在基板上具有大面积的石墨烯，并且直接形成没有中间层的石墨烯。 构成：石墨烯材料包括与衬底（10）的一侧结合的石墨烯（40），在衬底的面积的90％以上没有褶皱。 当用拉曼光谱测量时，石墨烯具有小于0.5的D带/ G带的峰值速率。 石墨烯材料还包括在石墨烯上的石墨催化剂层（20）。
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公开(公告)号：KR1020100091664A
公开(公告)日：2010-08-19
申请号：KR1020090010966
申请日：2009-02-11
Applicant: 삼성전자주식회사
IPC: G02F1/15
CPC classification number: G02F1/155 , B82Y20/00 , G02F2001/1555 , G02F2202/36
Abstract: PURPOSE: An electrochromic device and a manufacturing method thereof are provided to easily manufacture a counterpart electrode at low temperature. CONSTITUTION: The first electrode(120) is located on the first substrate. A carbon nano electrode structure layer(130) is located on the first electrode. The second electrode(220) is located on the second substrate facing the first substrate. An electrochromic layer(230) is located on the second electrode. An electrolyte layer(180) is interposed between the first and second substrates.
Abstract translation: 目的：提供一种电致变色装置及其制造方法，以在低温下容易制造对置电极。 构成：第一电极（120）位于第一基板上。 碳纳米电极结构层（130）位于第一电极上。 第二电极（220）位于面向第一基板的第二基板上。 电致变色层（230）位于第二电极上。 电解质层（180）插入在第一和第二基板之间。
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公开(公告)号：KR100907024B1
公开(公告)日：2009-07-10
申请号：KR1020070067410
申请日：2007-07-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82Y30/00 , B82Y40/00 , C01B32/172 , C01B32/174 , C01B2202/22 , C01B2202/28 , Y10S977/751 , Y10S977/895
Abstract: 본 발명에서는 비올로겐 화합물을 이용하여 탄소나노튜브의 분산효과를 증대시킴과 동시에 금속성 탄소나노튜브와 반도체성 탄소나노튜브를 각각 비극성 용매층과 물층으로 분리하는 방법과 이에 이용되는 조성물이 개시된다. 본 발명에 따르면 비올로겐의 산화, 환원 반응에 따른 극성, 비극성 차이를 이용하여 탄소나노튜브의 분산 및 분리를 효과적으로 수행할 수 있다.
탄소나노튜브, 상 분리, 비올로겐(viologen)-
Patent Agency Ranking
公开(公告)号：KR1020090028007A
公开(公告)日：2009-03-18
申请号：KR1020070093253
申请日：2007-09-13
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01B5/14 , H01L31/0224 , H01L31/04 , C01B31/02
CPC classification number: H01L31/022466 , B82Y20/00 , G02F1/133305 , G02F1/13439 , G02F2202/36 , H01L31/1884 , H01L51/0037 , H01L51/0081 , H01L51/442 , H01L51/444 , H01L51/5206 , H05B33/28 , Y02E10/542 , Y02E10/549
Abstract: A transparent electrode, and the indicating device and the solar battery adopting the same are provided to apply the graphene sheet to the transparent electrode containing the graphene sheet and to improve the electrical characteristic of the transparent electrode. The transparent electrode comprises the transparent substrate and the transparent conductive film. The transparent conductive film comprises the graphene sheet. The transparent electrode can be the flexible. The thickness of the graphene sheet can be 0.1nm to 100nm. The surface resistance of the transparent electrode can be 1Ф / sq. to 1000Ф / sq. The permeability of the transparent electrode can be 70% to 99.9%.
Abstract translation: 提供透明电极，并且指示装置和采用该透明电极的太阳能电池被设置为将石墨烯片施加到包含石墨烯片的透明电极并改善透明电极的电特性。 透明电极包括透明基板和透明导电膜。 透明导电膜包括石墨烯片。 透明电极可以是柔性的。 石墨烯片的厚度可以为0.1nm至100nm。 透明电极的表面电阻可以为1〜/平方〜1000度/平方，透明电极的透过率可以为70〜99.9％。
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公开(公告)号：KR1020090027433A
公开(公告)日：2009-03-17
申请号：KR1020070092650
申请日：2007-09-12
Applicant: 삼성전자주식회사
CPC classification number: C01B32/184 , B82Y30/00 , B82Y40/00 , C01B3/0015 , C01B2204/02 , C01B2204/04 , G02B6/032 , Y02E60/328 , Y10T428/2982 , Y10T428/2991 , B01J21/18 , B01J31/00
Abstract: A method for manufacturing a graphene shell is provided to make the graphene economically with a desired shape and to control thickness of the graphene. A method for manufacturing a graphene shell includes a step for forming a graphite catalyst of a solid type, a step for coating polymer on the graphite catalyst, and a step for forming the graphene shell by performing a heat process. The solid shape is a sphere shape, a cylindrical shape, and a polyhedron shape. The graphite catalyst is one or more selected from a group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. The polymer is self-assembly polymer. The polymer has a polymerizable functional group.
Abstract translation: 提供了一种用于制造石墨烯壳的方法，以经济地制造具有所需形状的石墨烯并控制石墨烯的厚度。 制造石墨烯壳的方法包括形成固体类型的石墨催化剂的步骤，在石墨催化剂上涂覆聚合物的步骤，以及通过进行热处理形成石墨烯壳的步骤。 实心形状是球形，圆柱形和多面体形状。 石墨催化剂是选自Ni，Co，Fe，Pt，Au，Al，Cr，Cu，Mg，Mn，Mo，Rh，Si，Ta，Ti，W，U，V和Zr中的一种或多种 。 聚合物是自组装聚合物。 聚合物具有聚合性官能团。
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公开(公告)号：KR1020080105368A
公开(公告)日：2008-12-04
申请号：KR1020070052868
申请日：2007-05-30
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L51/002 , B82Y10/00 , H01L51/0021 , H01L51/0049 , H01L51/444 , H01L51/5206 , Y02E10/542 , Y02E10/549
Abstract: A doping method of a carbon nanotube is provided to improve conductivity, to maintain flexibility and to be usefully used for various indicating devices, a thin film transistor or a solar battery etc. A doping method of a carbon nanotube comprise steps of: forming an oxidizing agent solution including an oxidizer and an organic solvent; and doping-treating the carbon nanotube to the oxidizing agent solution. The doping treatment comprises a step of mixing and agitating powders of the carbon nanotube into the oxidizing agent solution.
Abstract translation: 提供碳纳米管的掺杂方法以改善导电性，保持柔性并有效地用于各种指示装置，薄膜晶体管或太阳能电池等。碳纳米管的掺杂方法包括以下步骤：形成氧化 试剂溶液，包括氧化剂和有机溶剂; 并将碳纳米管掺杂到氧化剂溶液中。 掺杂处理包括将碳纳米管的粉末混合并搅拌到氧化剂溶液中的步骤。
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公开(公告)号：KR100857542B1
公开(公告)日：2008-09-08
申请号：KR1020070072065
申请日：2007-07-19
Applicant: 삼성전자주식회사
CPC classification number: H05B33/10 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , H01L51/002 , H01L51/0049 , H01L51/444 , H01L51/5012
Abstract: A CNT(Carbon Nano-Tube) light emitting device and a manufacturing method thereof are provided to simplify a process and to reduce a cost by implementing p-n junction by coating an n-doping polymer and a p-doping polymer on both ends of a CNT thin film. A CNT light emitting device includes a CNT thin film(40), an n-doping polymer(43), a p-doping polymer(44), and a light emitting unit(42). The CNT thin film is formed by using a CNT dispersion solution. The n-doping polymer is formed on one end of the CNT thin film. The p-doping polymer is formed on the other end of the CNT thin film. The light emitting unit is formed between the n-doping polymer and the p-doping polymer. A CNT is a semiconducting CNT. A p-n junction portion is formed on an interface between the n-doping polymer and the p-doping polymer by forming the n-doping polymer and the p-doping polymer on the CNT thin film not to be spaced apart from each other.
Abstract translation: 提供CNT（碳纳米管）发光器件及其制造方法，以简化工艺并通过在CNT的两端涂覆n掺杂聚合物和p掺杂聚合物来实现pn结来降低成本 薄膜。 CNT发光器件包括CNT薄膜（40），n掺杂聚合物（43），p掺杂聚合物（44）和发光单元（42）。 通过使用CNT分散液形成CNT薄膜。 n型掺杂聚合物形成在CNT薄膜的一端。 p型掺杂聚合物形成在CNT薄膜的另一端。 发光单元形成在n掺杂聚合物和p掺杂聚合物之间。 CNT是半导体CNT。 通过在CNT薄膜上形成n掺杂聚合物和p掺杂聚合物彼此不分开，在n掺杂聚合物和p掺杂聚合物之间的界面上形成p-n结部分。
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公开(公告)号：KR100837413B1
公开(公告)日：2008-06-12
申请号：KR1020060126409
申请日：2006-12-12
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , B82Y10/00
Abstract: 기판;
상기 기판 내부에 형성되며, 서로 이격되어 위치하는 소스 영역; 및 드레인 영역;
상기 기판 표면에 형성되어, 상기 소스 영역 및 드레인 영역을 연결하며, 복수개의 나노결정을 포함하는 메모리 셀;
상기 메모리 셀 상에 형성되는 제어 게이트;를 구비하며,
상기 메모리 셀이 상기 기판 상에 형성되는 적어도 하나의 터널링 산화물층; 상기 적어도 하나의 터널링 산화물층 상에 형성되는 복수개의 나노결정을 포함하는 제어 산화물층;을 구비하는 것을 특징으로 하는 메모리 소자를 제공한다.
본 발명에 따른 메모리 소자 제조 방법은 고분자 전해질막을 구비함으로써 나노결정의 균일한 배열이 가능하여 소자 특성의 제어가 가능하고 보다 향상된 소자 특성을 보여주는 메모리 소자를 제공하는 것이 가능하다.
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