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公开(公告)号：KR1020080008456A
公开(公告)日：2008-01-24
申请号：KR1020060067728
申请日：2006-07-20
Applicant: 삼성전자주식회사
IPC: H04B1/40
Abstract: An apparatus and a method for confirming regenerable media information in a portable terminal are provided to confirm a playlist associated with a media file being regenerated easily and renew the playlist without stopping the media file by simplifying existing due procedures in searching for an media object. An apparatus for confirming regenerable media information in a portable terminal comprises a media management part(210) and a control part(200). The media management part(210) creates a media list corresponding to a playlist modification method according to the directions from the control part(200). The control part(200) controls the media management part(210) so as to create the media list. The media management part(210) contains an object database(214) and an object searching part(212). The object database(214) stores information to confirm the media list. The object searching part(212) searches the object database(214) and confirms a media list corresponding to a searching method. The object searching part(212) compares the object ID of the media object of a media file being regenerated with the object ID of the media object of a requested media file and confirms whether the two files are identical.
Abstract translation: 提供了一种用于确认便携式终端中的可再生媒体信息的装置和方法，用于通过简化搜索媒体对象中的现有正当程序来确认与正在重新生成的媒体文件相关联的播放列表，并且不停止媒体文件来更新播放列表。 一种用于在便携式终端中确认可再生媒体信息的装置包括媒体管理部分（210）和控制部分（200）。 媒体管理部件根据来自控制部分的指示，创建与播放列表修改方法对应的媒体列表。 控制部分（200）控制媒体管理部分（210）以便创建媒体列表。 媒体管理部分（210）包含对象数据库（214）和对象搜索部分（212）。 对象数据库（214）存储确认媒体列表的信息。 对象搜索部（212）搜索对象数据库（214），并确认与搜索方法对应的媒体列表。 对象搜索部分（212）将正在重新生成的媒体文件的媒体对象的对象ID与请求的媒体文件的媒体对象的对象ID进行比较，并确认两个文件是否相同。
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公开(公告)号：KR100439038B1
公开(公告)日：2004-07-03
申请号：KR1020020050246
申请日：2002-08-23
Applicant: 삼성전자주식회사
IPC: H01L21/3205
CPC classification number: H01L27/10855 , H01L27/10814 , H01L27/10885
Abstract: Semiconductor device comprises an insulating film formed on a semiconductor substrate having a bit line contact and a bit line pattern, a bit line surrounded by the insulating film, and a bit line covering layer protruding from the insulating film. The protruding section of the bit line covering layer is wider than the width of the bit line. An Independent claim is also included for a process for the production of the semiconductor device.
Abstract translation: 半导体器件包括形成在具有位线接触和位线图案的半导体衬底上的绝缘膜，由绝缘膜围绕的位线以及从绝缘膜突出的位线覆盖层。 位线覆盖层的突出部分比位线的宽度宽。 独立权利要求也包括在用于生产半导体器件的工艺中。
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公开(公告)号：KR1020040022043A
公开(公告)日：2004-03-11
申请号：KR1020020053864
申请日：2002-09-06
Applicant: 삼성전자주식회사
IPC: H01L27/10
Abstract: PURPOSE: A method for forming a capacitor of a semiconductor device is provided to enhance capacitance by using a nitride layer as an etch stop layer. CONSTITUTION: Bit lines(12) are formed on a semiconductor substrate(10) defined by a cell region and a peripheral region. A nitride layer(14) is formed on the resultant structure. A contact(C) is formed through an interlayer dielectric and a barrier(18) is formed between the cell and peripheral region. A capacitor oxide layer(20) is formed on the resultant structure. A lower electrode(22) is formed by selectively etching the capacitor oxide layer. The lower electrode and contact are exposed by etching the exposed capacitor oxide layer and the interlayer dielectric of the cell region using the nitride layer as an etch stop layer. Then, a dielectric film(24) and an upper electrode(26) are sequentially formed on the exposed lower electrode and the contact.
Abstract translation: 目的：提供一种用于形成半导体器件的电容器的方法，以通过使用氮化物层作为蚀刻停止层来增强电容。 构成：位线（12）形成在由单元区域和外围区域限定的半导体衬底（10）上。 在所得结构上形成氮化物层（14）。 通过层间电介质形成触点（C），并且在电池和周边区域之间形成阻挡层（18）。 在所得结构上形成电容器氧化物层（20）。 通过选择性地蚀刻电容器氧化物层来形成下电极（22）。 通过使用氮化物层作为蚀刻停止层来蚀刻暴露的电容器氧化物层和电池区域的层间电介质来暴露下部电极和接触。 然后，在暴露的下电极和触点上依次形成电介质膜（24）和上电极（26）。
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公开(公告)号：KR1020040017983A
公开(公告)日：2004-03-02
申请号：KR1020020050246
申请日：2002-08-23
Applicant: 삼성전자주식회사
IPC: H01L21/3205
CPC classification number: H01L27/10855 , H01L27/10814 , H01L27/10885
Abstract: PURPOSE: A bit line of a semiconductor device having a stud type capping layer and a forming method thereof are provided to be capable of improving process margin in forming a storage node contact. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate, an insulating layer(340) having a bit line contact and a groove type bit line pattern, and a bit line(362) partially formed at the inner portion of the bit line contact and bit line pattern. At this time, the bit line is enclosed with the insulating layer. The semiconductor device further includes a bit line capping layer(369) formed at the upper portion of the bit line for being protruded from the insulating layer. Preferably, the protruding portion is larger than the width of the bit line.
Abstract translation: 目的：提供具有螺柱型封盖层的半导体器件的位线及其形成方法，以能够改善形成存储节点接触的工艺余量。 构成：半导体器件设置有半导体衬底，具有位线接触和凹槽型位线图案的绝缘层（340）和部分地形成在位线接触件的内部的位线（362），以及 位线图案。 此时，位线被绝缘层包围。 半导体器件还包括形成在位线的上部的位线覆盖层（369），用于从绝缘层突出。 优选地，突出部分大于位线的宽度。
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公开(公告)号：KR1020030050738A
公开(公告)日：2003-06-25
申请号：KR1020010081253
申请日：2001-12-19
Applicant: 삼성전자주식회사
Inventor： 이창헌
IPC: H01L27/04
Abstract: PURPOSE: A method for manufacturing a cylinder type capacitor of a semiconductor device is provided to be capable of securing high capacitance and reducing leakage current by transforming a nickel layer into a nickel silicide layer using a heat treatment. CONSTITUTION: A plurality of cylinder type storage nodes are formed and spaced apart from each other at the upper portion of a semiconductor substrate, wherein the cylinder type storage node is made of a polysilicon layer. A nickel layer is formed on the storage nodes by using a CVD(Chemical Vapor Deposition). A lower electrode(130b) is formed by transforming the nickel layer into a nickel silicide layer using a heat treatment. A dielectric layer(150) and an upper electrode(160) are sequentially formed on the lower electrode(130b). Preferably, the heat treatment is carried out at the temperature of 350-450 °C.
Abstract translation: 目的：提供一种制造半导体器件的圆筒型电容器的方法，其能够通过使用热处理将镍层转化为硅化镍层，从而确保高容量并降低漏电流。 构成：在半导体基板的上部形成有多个圆柱形的存储节点并且彼此间隔开，其中圆筒型存储节点由多晶硅层制成。 通过使用CVD（化学气相沉积）在存储节点上形成镍层。 通过使用热处理将镍层转变成硅化镍层来形成下电极（130b）。 电介质层（150）和上电极（160）依次形成在下电极（130b）上。 优选地，热处理在350-450℃的温度下进行。
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Patent Agency Ranking
公开(公告)号：KR1020020092118A
公开(公告)日：2002-12-11
申请号：KR1020010031021
申请日：2001-06-02
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: PURPOSE: A method for manufacturing semiconductor devices is provided to easily achieve an IMD(InterMetal Dielectric) layer having a global uniformity and planarization without exposing a lower metal wiring. CONSTITUTION: A metal film is formed on a wafer(200). A photoresist layer is coated on the metal film. A photoresist pattern is formed by patterning the photoresist layer, wherein the photoresist pattern includes wiring patterns(210) of a main chip and dummy patterns(220a,220b) formed at inner part of an exposure edge(X2) of the wafer(200). At this time, the dummy patterns(220a,220b) have relatively small size compared to the wiring patterns(210) of the main chip. A metal wiring is formed by etching the metal film using the photoresist pattern as a mask. After removing the photoresist pattern, a dielectric layer is formed on the resultant structure and planarized by CMP(Chemical Mechanical Polishing).
Abstract translation: 目的：提供一种制造半导体器件的方法，以容易地实现具有全局均匀性和平坦化的IMD（InterMetal介电）层，而不暴露下部金属布线。 构成：在晶片（200）上形成金属膜。 光致抗蚀剂层被涂覆在金属膜上。 通过图案化光致抗蚀剂层形成光致抗蚀剂图案，其中光致抗蚀剂图案包括主芯片的布线图案（210）和形成在晶片（200）的曝光边缘（X2）的内部的虚拟图案（220a，220b） 。 此时，与主芯片的布线图案（210）相比，虚设图形（220a，220b）具有相对较小的尺寸。 通过使用光致抗蚀剂图案作为掩模蚀刻金属膜来形成金属布线。 在除去光致抗蚀剂图案之后，在所得结构上形成电介质层，并通过CMP（Chemical Mechanical Polishing）进行平坦化。
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公开(公告)号：KR100164403B1
公开(公告)日：1999-02-01
申请号：KR1019950020512
申请日：1995-07-12
Applicant: 삼성전자주식회사
Inventor： 이창헌
IPC: H04M3/42
Abstract: 1. 청구범위 기재된 발명이 속한 기술분야
VMS가 연결된 공중용 교환시스템에서 내선번호 번역에 의한 통화방법에 관한 기술이다.
2. 발명이 해결하고자 하는 기술적 과제
공중전화망(PSTN)으로부터 할당받은 가입자번호의 갯수보다 더 많은 가입자를 수용할 경우에는 가입자 번호를 확장하여 더 많은 가입자번호를 교환기 내부에서 사용하도록 한다.
3. 발명의 해결방법의 요지
공중전화망으로부터 부여받은 번호에 다수의 내선번호를 수용하여 국선가입자가 다른 국선가입자를 호출할 시 VMS에서 전화를 받아 내선번호를 입력시키도록 하여 내선번호가 수신되면 이 수신된 내선번호를 다시 교환기로 송출하여 번호번역을 한 후 호출한 국선가입자와 내선가입자간의 통화로를 형성한다.
4. 발명의 중요한 용도
VMS가 연결된 교환시스템에 적용한다.-
公开(公告)号：KR101891776B1
公开(公告)日：2018-08-24
申请号：KR1020120001351
申请日：2012-01-05
Applicant: 삼성전자주식회사
Inventor： 이창헌
IPC: G11C11/401 , G11C11/406
CPC classification number: G11C7/00 , G11C11/40622
Abstract: 본발명은메모리의재충전(refresh) 동작제어를통한소모전류절감방법및 그장치에관한것이다. 본발명의일 실시예에따른부분적인재충전동작수행이가능한메모리를포함하는장치의재충전(refresh) 동작제어를통한소모전류절감방법은, 상기메모리에로딩(loading)된데이터를제1 데이터와제2 데이터로분류하는단계; 기설정된시간동안상기제1데이터에대한접근이감지되지않는경우, 상기메모리를제1 영역과제2 영역으로분리하여구성하는단계; 상기제1 데이터는상기제1 영역에, 상기제2 데이터는상기제2 영역에각각구분하여배치하는단계; 상기메모리가재충전되도록설정된시간이도래하는경우, 상기제2 영역에대해서재충전동작을수행하여데이터를유지하는단계; 및상기제1데이터에대한접근감지이감지되는경우, 상기제1 데이터를상기메모리에로드(load)하는단계를포함하는것을특징으로한다. 본발명에따르면, 메모리의일부영역에대해서만재충전동작을수행하여재충전에필요한전류의소비를줄여소모전류를절감하고배터리사용시간을증가시킬수 있다.
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公开(公告)号：KR101849103B1
公开(公告)日：2018-06-01
申请号：KR1020110101715
申请日：2011-10-06
Applicant: 삼성전자주식회사
CPC classification number: F25D29/00 , F25B2600/0251 , F25D17/045 , F25D17/065 , F25D21/006 , F25D2317/061 , F25D2600/02 , F25D2700/12
Abstract: 복수의저장실의용도를저온및 고온용도로변경가능한냉장고및 그제어방법을제공한다. 냉장고는복수의저장실; 본체의후방하부에마련되는압축기와응축기및 복수의저장실중 어느하나에설치되는증발기와, 송풍팬과, 제상히터를포함하는냉기공급장치; 복수의저장실중 저온기능이선택된저장실로의냉기의공급을조절하는저온저장실댐퍼; 복수의저장실중 고온기능이선택된저장실로의온기의공급을조절하는고온저장실댐퍼; 복수의저장실중 저온기능이선택된저장실의온도가저온설정온도에도달하도록압축기와송풍팬을가동시키면서, 저온저장실댐퍼를개방하고고온저장실댐퍼를폐쇄하여저온기능이선택된저장실로냉기가공급되도록하고, 저온기능이선택된저장실의온도가저온설정온도에도달하면압축기와송풍팬의가동을정지시키고저온저장실댐퍼를폐쇄하여저온기능이선택된저장실로의냉기공급을중지하고, 냉기공급이중지되면제상히터와송풍팬을가동시키며고온저장실댐퍼를개방하여복수의저장실중 고온기능이선택된저장실로온기가공급되도록하는제어부를포함한다.
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公开(公告)号：KR1020150094255A
公开(公告)日：2015-08-19
申请号：KR1020140015315
申请日：2014-02-11
Applicant: 삼성전자주식회사
CPC classification number: F24F1/0011 , F24F13/12 , F24F13/20 , F24F2001/0048 , F24F2013/1446
Abstract: 본 발명은 마찰부재를 이용하여 매끄럽게 이동가능한 도어가 설치된 공기조화기에 관한 것이다. 공기조화기는 외관을 형성하는 본체, 본체의 하부에 마련된 공기를 토출하는 토출구, 토출구를 개폐할 수 있도록 본체의 전면에 설치된 도어, 회전가능하게 설치되는 피니언(pinion)과 피니언과 맞물려 도어와 함께 이동가능하도록 설치되는 랙(rack)을 포함하는 구동장치, 랙의 이동시 랙을 가압하여 랙과 피니언이 소정의 간격을 유지하도록 마련되는 마찰부재를 포함한다. 마찰부재를 이용하여 랙과 도어가 모터의 힘에 의해 부드럽게 곡선경로로 슬라이딩될 수 있다.
Abstract translation: 本发明涉及一种具有通过使用摩擦构件而平滑地安装的门的空调。 空调包括：形成外部的主体; 排出口，排出制备在身体下部的空气; 安装在身体前部的门打开和关闭排放口; 安装旋转的小齿轮; 驱动装置，其包括安装成随着与所述小齿轮啮合的门移动的齿条; 以及摩擦构件，其通过在齿条移动时通过按压齿条而在齿条和小齿轮形成以保持一定距离。 齿条和门通过使用摩擦构件的马达的力在弯曲路径中平滑地滑动。
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