公开(公告)号：KR1020080083479A

公开(公告)日：2008-09-18

申请号：KR1020070024099

申请日：2007-03-12

Applicant: 삼성전자주식회사

Inventor： 김홍기 ,  노현필 ,  정희근

IPC: H01L27/146

CPC classification number: H01L27/14698 ,  H01L27/14636 ,  H01L27/14685

Abstract: A method for manufacturing a semiconductor device is provided to enhance reliability by preventing the generation of noise of an image sensor. An interlayer dielectric(120) is formed on a substrate(100) including a gate insulating layer(105), a gate electrode, and a photodiode region(118). A mold insulating layer is formed on the interlayer dielectric in order to expose the interlayer dielectric on the photodiode region. A protective layer(185) including hydrogen atoms are formed along a profile of the mold insulating layer. An annealing process is performed to diffuse the hydrogen atoms from the protective layer to the gate insulating layer and the photodiode region.

Abstract translation: 提供一种用于制造半导体器件的方法，以通过防止图像传感器的噪声的产生来提高可靠性。 在包括栅极绝缘层（105），栅极电极和光电二极管区域（118）的基板（100）上形成层间电介质（120）。 为了露出光电二极管区域上的层间电介质，在层间电介质上形成模绝缘层。 沿着模具绝缘层的轮廓形成包括氢原子的保护层（185）。 执行退火处理以将氢原子从保护层扩散到栅极绝缘层和光电二极管区域。

公开(公告)号：KR1020080011550A

公开(公告)日：2008-02-05

申请号：KR1020060071998

申请日：2006-07-31

Applicant: 삼성전자주식회사

Inventor： 정희근

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L21/823462 ,  H01L27/14609 ,  H01L27/14614

Abstract: A method for fabricating an image sensor is provided to reduce random noise by including a gate insulation layer formed in an active region such that the gate insulation layer is made of an oxide material. A semiconductor substrate(100) is prepared which has first, second and third regions. A photodiode(104) is formed on the surface of the substrate in the first region. A first gate insulation layer(108) is formed on the first region, adjacent to the photodiode. A first gate electrode(112) is formed on the first gate insulation layer while a first electrode(116) of a capacitor is formed on the third region. A dielectric layer(118) is formed on the lateral surfaces of the first electrode of the capacitor. A second gate insulation layer(122) is formed in the second region of the substrate. A second gate electrode(126) is formed on the second gate insulation layer while a second electrode(128) of the capacitor electrically connected to the first electrode of the capacitor is formed on the third region by interposing the dielectric layer. Spacers can be formed on the sidewalls of the first and second gate electrodes, respectively.

Abstract translation: 提供了一种用于制造图像传感器的方法，通过包括形成在有源区域中的栅极绝缘层使得栅极绝缘层由氧化物材料制成来减少随机噪声。 制备具有第一，第二和第三区域的半导体衬底（100）。 在第一区域中的基板的表面上形成光电二极管（104）。 在与光电二极管相邻的第一区域上形成第一栅极绝缘层（108）。 第一栅电极（112）形成在第一栅绝缘层上，同时在第三区上形成电容器的第一电极（116）。 在电容器的第一电极的侧表面上形成介电层（118）。 在基板的第二区域中形成第二栅绝缘层（122）。 第二栅极电极（126）形成在第二栅极绝缘层上，而电容器电连接的电容器的第二电极（128）通过介电介质层形成在第三区域上。 间隔物可以分别形成在第一和第二栅电极的侧壁上。

公开(公告)号：KR100712507B1

公开(公告)日：2007-04-30

申请号：KR1020050029952

申请日：2005-04-11

Applicant: 삼성전자주식회사

Inventor： 이석하 ,  노재섭 ,  남정현 ,  정희근

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: 두 종류의 소자분리영역을 포함하는 씨모스(CMOS) 이미지 센서 및 그 제조 방법이 제공된다. 본 발명에 따른 CMOS 이미지 센서는, 포토다이오드가 형성되는 활성영역의 적어도 일 측면을 둘러싸는 불순물 도핑으로 형성된 소자분리영역과, 그 위에 제어 게이트들이 형성되는 활성영역과 포토다이오드가 형성되는 활성영역의 일부를 둘러싸는 절연층으로 형성된 소자분리영역을 포함한다.

公开(公告)号：KR1020070005807A

公开(公告)日：2007-01-10

申请号：KR1020050060826

申请日：2005-07-06

Applicant: 삼성전자주식회사

Inventor： 권두원 ,  정희근

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14612 ,  H01L27/14685 ,  H01L27/14689 ,  H01L29/665

Abstract: A CMOS image sensor is provided to remarkably reduce a surface defect of a substrate having a photoelectric transformation device by using a non nitrous acid source in forming an oxide layer in contact with the photoelectric transformation device. A photoelectric transformation device(62) transforms a light signal into an electrical signal, formed in a semiconductor substrate. A transistor processes the electrical signal transformed by the photoelectric transformation device. An insulation layer in contact with the photoelectric transformation device is a pure oxide layer. A floating diffusion layer(56) is formed in the semiconductor substrate. A transfer gate electrode(52) transfers the electrical signal of the photoelectric transformation device to the floating diffusion layer, formed on the substrate between the photoelectric transformation device and the floating diffusion layer. A gate spacer(64) is formed on the sidewall of the transfer gate electrode. The gate space is a pure oxide layer.

Abstract translation: 提供一种CMOS图像传感器，通过在形成与光电转换装置接触的氧化物层中使用非亚硝酸源，显着地减少具有光电转换装置的基板的表面缺陷。 光电转换装置（62）将光信号转换成形成在半导体衬底中的电信号。 晶体管处理由光电变换装置变换的电信号。 与光电转换装置接触的绝缘层是纯氧化物层。 在半导体衬底中形成浮动扩散层（56）。 传输栅电极（52）将光电转换装置的电信号传送到形成在光电转换装置和浮动扩散层之间的衬底上的浮动扩散层。 栅极间隔物（64）形成在转移栅电极的侧壁上。 栅极空间是纯氧化物层。

公开(公告)号：KR1020060108956A

公开(公告)日：2006-10-19

申请号：KR1020050030738

申请日：2005-04-13

Applicant: 삼성전자주식회사

Inventor： 정희근 ,  노재섭 ,  이석하

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685

Abstract: A CMOS image sensor and a manufacturing method thereof are provided to prevent the generation of cross-talk between adjacent pixels by using an improved light shielding pattern with a heat resisting capability. A CMOS image sensor comprises a semiconductor substrate(100) with a photodiode(120) and a transistor, an interlayer dielectric on the semiconductor substrate, and a light shielding pattern. The light shielding pattern(142) is formed on the interlayer dielectric. The light shielding pattern encloses a peripheral portion of the photodiode. The light shielding pattern is made of one selected from a group consisting of a tungsten layer, a titanium layer, a nitride titanium layer, and a stacked structure of the titanium and nitride titanium layers.

Abstract translation: 提供CMOS图像传感器及其制造方法，通过使用具有耐热性的改进的遮光图案来防止相邻像素之间的串扰的产生。 CMOS图像传感器包括具有光电二极管（120）和晶体管的半导体衬底（100），半导体衬底上的层间电介质和遮光图案。 遮光图案（142）形成在层间电介质上。 遮光图案包围光电二极管的周边部分。 遮光图案由选自钨层，钛层，氮化钛层和钛和氮化钛层的层叠结构的一个构成。

公开(公告)号：KR1020030050096A

公开(公告)日：2003-06-25

申请号：KR1020010080488

申请日：2001-12-18

Applicant: 삼성전자주식회사

Inventor： 정희근

IPC: H01L21/76

Abstract: PURPOSE: A trench isolation method is provided to prevent a dent phenomenon chronically occurring in a conventional trench-type isolation process by performing a relatively simple additional process for recessing a pad layer. CONSTITUTION: The pad layer is formed on a substrate(100). An etch stop layer is formed on the pad layer. The etch stop layer, the pad layer and the substrate in a trench region are sequentially eliminated through a patterning process to form an etch stop layer pattern, a pad layer pattern and a substrate trench(140). An isotropic etch process is performed on the pad layer pattern to laterally recess the pad layer pattern. A silicon nitride layer liner(160) is formed on the substrate including the inner wall of the trench. A silicon oxide layer is stacked on the substrate to fill the trench. A chemical mechanical polishing(CMP) process is performed on the front surface of the substrate until the etch stop layer pattern is exposed. The etch stop layer pattern is removed to expose an active region through an etch process.

Abstract translation: 目的：提供沟槽隔离方法，通过执行相对简单的用于凹陷衬垫层的附加工艺来防止在常规沟槽型隔离工艺中长期存在的凹陷现象。 构成：衬垫层形成在衬底（100）上。 在焊盘层上形成蚀刻停止层。 沟槽区域中的蚀刻停止层，焊盘层和衬底通过图案化工艺顺序地消除，以形成蚀刻停止层图案，焊盘层图案和衬底沟槽（140）。 在衬垫层图案上执行各向同性蚀刻工艺以使衬垫层图案横向凹陷。 在包括沟槽的内壁的基板上形成氮化硅层衬垫（160）。 在衬底上堆叠氧化硅层以填充沟槽。 在衬底的前表面上执行化学机械抛光（CMP）工艺，直到暴露出蚀刻停止层图案。 去除蚀刻停止层图案以通过蚀刻工艺暴露活性区域。

公开(公告)号：KR1019990008496A

公开(公告)日：1999-02-05

申请号：KR1019970030454

申请日：1997-07-01

Applicant: 삼성전자주식회사

Inventor： 정희근 ,  박형무

IPC: H01L27/108

Abstract: 본 발명은 복합 반도체 장치의 비대칭 게이트 산화막 제조 방법에 관한 것으로서, 특히 상기 DRAM 영역보다 로직회로 영역의 게이트 산화막이 더 두껍게 형성되도록 제조하는 것을 특징으로 한다. 따라서, 본 발명은 DRAM의 대용량화와 로직회로의 고속성을 각각 달성할 수 있기 때문에 원칩의 성능 및 신뢰성을 향상시킬 수 있다.