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公开(公告)号：KR1020130130169A
公开(公告)日：2013-12-02
申请号：KR1020120020631
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: The present invention relates to nitride-based phosphor which is synthesized at low temperature in a relative sense by making chloride-based phosphor react with Si3N4 or Si2ON2, or oxynitride-based phosphor or oxynitride-based phosphor powder synthesized through a carbothermal reduction and nitridation (CRN) method, and a manufacturing method thereof.
Abstract translation: 本发明涉及通过使氯化物系荧光体与Si3N4或Si2ON2反应的低温合成的氮化物系荧光体或通过碳热还原和氮化合成的氧氮化物系荧光粉或氧氮化物系荧光体粉末 CRN）方法及其制造方法。
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公开(公告)号：KR1020120130938A
公开(公告)日：2012-12-04
申请号：KR1020110049016
申请日：2011-05-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L33/36
CPC classification number: H01L33/40 , H01L33/38 , H01L33/483
Abstract: PURPOSE: A light emitting device including a graphene pattern layer and a manufacturing method thereof are provided to improve the external quantum efficiency and to prevent total internal reflection of the light emitting device by using graphene as an electrode. CONSTITUTION: A first semiconductor layer(30) is formed on a substrate. An active layer is formed on the first semiconductor layer. A second semiconductor layer(50) is arranged on the active layer. A graphene pattern layer(60) is arranged on the second semiconductor layer. A polymer pattern layer is formed on the graphene pattern layer.
Abstract translation: 目的：提供一种包括石墨烯图案层的发光器件及其制造方法，以提高外部量子效率并通过使用石墨烯作为电极来防止发光器件的全内反射。 构成：在基板上形成第一半导体层（30）。 在第一半导体层上形成有源层。 第二半导体层（50）布置在有源层上。 石墨烯图案层（60）布置在第二半导体层上。 在石墨烯图案层上形成聚合物图案层。
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公开(公告)号：KR1020120098546A
公开(公告)日：2012-09-05
申请号：KR1020120020630
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A manufacturing method of chlorine-based phosphor or oxide-based phosphor is provided to increase light-emitting intensity of phosphor, in which rare earth metal is added, through strong oxidation or reduction using chloride, and to able to manufacture a more stable phosphor. CONSTITUTION: A manufacturing method of chlorine-based phosphor or oxide-based phosphor comprises a step of treating chloride-containing silicate phosphor to alkaline material. The alkaline material comprises a compound containing -OH, -NH2, or NH3. The alkaline compound comprising -OH comprises LiOH, NaOH, KOH, RbOH, CsOH, NH4OH, H2O2, or combinations thereof. A treatment to the alkaline material is conducted at (-100) - 1500 °C. The chloride-based phosphor additionally comprises rare earth metal.
Abstract translation: 目的：提供氯系荧光体或氧化物系荧光体的制造方法，通过使用氯化物的强氧化或还原来提高添加稀土金属的荧光体的发光强度，能够制造更稳定 磷。 构成：氯系荧光体或氧化物系荧光体的制造方法包括将含氯化物的硅酸盐荧光体处理成碱性物质的工序。 碱性材料包含含有-OH，-NH 2或NH 3的化合物。 包含-OH的碱性化合物包括LiOH，NaOH，KOH，RbOH，CsOH，NH 4 OH，H 2 O 2或其组合。 在（-100）-100℃下对碱性物质进行处理。 基于氯化物的荧光体还包括稀土金属。
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公开(公告)号：KR1020120098545A
公开(公告)日：2012-09-05
申请号：KR1020120020629
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A manufacturing method of silicate chloride-based phosphor is provided to provide a spherical silicate chloride-based phosphor having uniform particle size, excellent luminance efficiency, excellent productivity, and excellent profitability. CONSTITUTION: A manufacturing method of silicate chloride-based phosphor comprises: a step of obtaining metal salt-SiO2 sol mixed solution by mixing metal salt mixed solution, which comprises metal sat for synthesizing silicate chloride-based phosphor with rare earth metal, together with sol to liquid phase; a step of impregnating the metal salt-SiO2 sol mixed solution into a polymer material, drying the polymer material, and conducting low-temperature calcinations, preoxidation firing, and post reduction firing to obtain silicate chloride-based phosphor. [Reference numerals] (AA) Metal solution, aqueous silicon compound(WSS); (BB) Impregnation(cellulose); (CC) Mixing, stirring and drying under ultra sonic waves; (DD) First sintering(150-400°C, air); (EE) Second sintering(500-1000°C, air); (FF) 700-1400°C, sintering under reduction; (GG) Phosphor
Abstract translation: 目的：提供一种硅酸氯化物系荧光体的制造方法，提供粒径均匀，发光效率好，生产率优异，利润率优异的球形硅酸氯化物系荧光体。 构成：一种硅酸氯化物系荧光体的制造方法，其特征在于，通过混合金属盐混合溶液得到金属盐-SiO 2溶胶混合溶液的步骤，所述金属盐混合溶液包括用于合成硅酸氯化物基荧光体与稀土金属的金属sat，以及溶胶 到液相; 将金属盐-SiO 2溶胶混合溶液浸渍到聚合物材料中，干燥聚合物材料，进行低温煅烧，预氧化烧结和后还原烧成，得到硅酸氯化物系荧光体。 （标号）（AA）金属溶液，硅酸水溶液（WSS）; （BB）浸渍（纤维素）; （CC）在超声波下混合搅拌干燥; （DD）第一烧结（150-400℃，空气）; （EE）第二烧结（500-1000℃，空气）; （FF）700-1400℃，还原烧结; （GG）荧光体
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