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公开(公告)号：KR1020210025331A
公开(公告)日：2021-03-09
申请号：KR1020190105219
申请日：2019-08-27
Applicant: 성균관대학교산학협력단
IPC: C01B33/02 , C01B32/182
Abstract: 본원은실리콘입자의표면에그래핀층을형성하는단계; 및상기그래핀내부에존재하는상기실리콘입자의외부표면을기상식각하는단계를포함하는, 요크-쉘구조체의제조방법에관한것이다.
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公开(公告)号：KR101766778B1
公开(公告)日：2017-08-09
申请号：KR1020150113403
申请日：2015-08-11
Applicant: 성균관대학교산학협력단
IPC: H01L21/205 , H01L21/683 , H01L21/324
Abstract: 화학기상증착장치는챔버, 상기챔버내부에위치하며, 상부면에기판이놓이는스테이지부, 일단이스테이지부의하부면에연결되어스테이지부를지지하는지지대, 및스테이지부의하부면과지지대의일단사이에위치하며, 스테이지부의기울기를조절하는틸팅부를포함하고, 틸팅부는기판에대한증착공정시 스테이지부를가스가주입되는방향을향해기울이되, 스테이지부를가스가주입되는부분으로부터먼 영역은상승시키고가까운영역은하강시킨다.
Abstract translation: 的化学气相沉积装置被定位在所述腔室内，该腔室被放置阶段基板顶端表面上，连接到支撑用于支撑台的下表面部分中的阶段的一个端部，以及位于所述台部底表面和所述支撑体之间的一端 其中，倾斜部分在基板的沉积过程中朝向气体注入方向倾斜台部分，使台部分远离注入气体的部分升高， 它降低。
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公开(公告)号：KR1020170019244A
公开(公告)日：2017-02-21
申请号：KR1020150113403
申请日：2015-08-11
Applicant: 성균관대학교산학협력단
IPC: H01L21/205 , H01L21/683 , H01L21/324
Abstract: 화학기상증착장치는챔버, 상기챔버내부에위치하며, 상부면에기판이놓이는스테이지부, 일단이스테이지부의하부면에연결되어스테이지부를지지하는지지대, 및스테이지부의하부면과지지대의일단사이에위치하며, 스테이지부의기울기를조절하는틸팅부를포함하고, 틸팅부는기판에대한증착공정시 스테이지부를가스가주입되는방향을향해기울이되, 스테이지부를가스가주입되는부분으로부터먼 영역은상승시키고가까운영역은하강시킨다.
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Patent Agency Ranking
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公开(公告)号：KR1020130058407A
公开(公告)日：2013-06-04
申请号：KR1020110124398
申请日：2011-11-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01B1/04 , Y10S977/734 , Y10S977/773 , C01B32/15
Abstract: PURPOSE: A graphene ball structure, a manufacturing method thereof, and graphene ball network are provided to be manufactured in a network shape by laminating several graphene ball structures and usefully use lithium ion battery, hydrogen storage device, sensor, capacitor, optical device or electric component etc. CONSTITUTION: A graphene ball structure (100) comprises the core of sphere shape including semiconductor material; a graphene shell (120) including graphene which covers the core. The semiconductor material comprises an IV group semiconductor, III- V group semiconductor or II-VI group semiconductor. The Graphene ball structure is manufactured by chemical vapor deposition using gas including semiconductor material and carbon. The diameter of the core is 1nm ~ 10 μm. The graphene shell has more than one layered structure.
Abstract translation: 目的：提供石墨烯球结构及其制造方法和石墨烯球网，通过层压几个石墨烯球结构而制造成网状，并有效地使用锂离子电池，储氢装置，传感器，电容器，光学装置或电 部件等。构成：石墨烯球结构（100）包括包括半导体材料的球形芯; 包括覆盖芯的石墨烯的石墨烯壳（120）。 半导体材料包括IV族半导体，III-V族半导体或II-VI族半导体。 石墨烯球结构通过使用包括半导体材料和碳的气体的化学气相沉积来制造。 芯的直径为1nm〜10μm。 石墨烯壳具有多于一层的分层结构。
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公开(公告)号：KR1020130006943A
公开(公告)日：2013-01-18
申请号：KR1020110062482
申请日：2011-06-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0673 , H01L29/66045 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/785 , H01L29/78684 , H01L29/78696
Abstract: PURPOSE: A graphene structure, a graphene device, and manufacturing methods thereof are provided to prevent junction failure by forming a channel and electrodes with graphene. CONSTITUTION: The side of a growth layer(120) is exposed. The growth layer is formed on the substrate. Graphene(140) is grown on the side of the growth layer. The growth layer includes metal or Ge. A protection layer(130) covers the upper side of the growth layer.
Abstract translation: 目的：提供石墨烯结构，石墨烯装置及其制造方法，以通过形成具有石墨烯的通道和电极来防止接合故障。 构成：暴露生长层（120）的一侧。 生长层形成在基底上。 石墨烯（140）在生长层的一侧生长。 生长层包括金属或Ge。 保护层（130）覆盖生长层的上侧。
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公开(公告)号：KR1020120063164A
公开(公告)日：2012-06-15
申请号：KR1020100124233
申请日：2010-12-07
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30 , B32B5/04 , B32B9/007
Abstract: PURPOSE: A graphene structure and a manufacturing method thereof are provided to enable users to easily obtain various shapes of three-dimensional structures using graphene. CONSTITUTION: A graphene structure includes a substrate(110) in a three-dimensional shape, and graphene(150) partially covering the outer surface of the substrate. The substrate has a post shape with a hollow inside space, and the graphene surrounds the outer surface of the post-shaped substrate. The substrate is either a nano-wire or a nano post, and is manufactured with germanium or coated with germanium. The graphene structure comprises a first graphene layer, a supporting layer formed on the first graphene layer using the germanium, and a second graphene layer. Another layer of supporting layer is mounted on the second graphene layer for forming multi-layered graphene with holes.
Abstract translation: 目的：提供石墨烯结构及其制造方法，使得用户能够使用石墨烯容易地获得各种形状的三维结构。 构成：石墨烯结构包括三维形状的衬底（110）和部分地覆盖衬底的外表面的石墨烯（150）。 衬底具有中空的内部空间的柱形，并且石墨烯围绕后形衬底的外表面。 衬底是纳米线或纳米柱，并且用锗制成或用锗涂覆。 石墨烯结构包括第一石墨烯层，使用锗形成在第一石墨烯层上的支撑层和第二石墨烯层。 另一层支撑层安装在第二石墨烯层上，用于形成具有孔的多层石墨烯。
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公开(公告)号：KR1020110133924A
公开(公告)日：2011-12-14
申请号：KR1020100053598
申请日：2010-06-07
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: PURPOSE: A nano structure including a discontinuous area and a thermoelectric device with the same are provided to supply a thermoelectric object with the discontinuous area, thereby enhancing the thermoelectric features of the thermoelectric device. CONSTITUTION: A nano structure(10) comprises a core(11) and a shell(12). A discontinuous area exists in the nano structure. The discontinuous area is one or two-dimensional defect area in a crystal. The core has a discontinuous crystalline structure which includes a discontinuous area. The shell is formed in a crystalline structure.
Abstract translation: 目的：提供包括不连续区域的纳米结构和具有不连续区域的热电装置，以向不对称的区域供应热电物体，从而增强热电装置的热电特征。 构成：纳米结构（10）包括芯（11）和壳（12）。 在纳米结构中存在不连续区域。 不连续区域是晶体中的一维或二维缺陷区域。 芯具有包括不连续区域的不连续晶体结构。 壳形成结晶结构。
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