公开(公告)号：KR1020120003413A

公开(公告)日：2012-01-10

申请号：KR1020110135332

申请日：2011-12-15

Applicant: 서울대학교산학협력단

Inventor： 윤의준 ,  차국헌 ,  김종학 ,  오세원 ,  우희제

IPC: H01L21/20 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L21/02458 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

Abstract: PURPOSE: A substrate for a semiconductor device, a nitrogen thin film structure using the same, and a forming method thereof are provided to obtain an ELO(Epitaxial Lateral Overgrowth) effect due to a hollow structure by growing a nitrogen thin film from the exposed substrate surface around the hollow structure. CONSTITUTION: A substrate(300) is used for a heterogeneous epitaxial thin film growth of semiconductor materials. A plurality of hollow structures(305) have an empty particle shape on the substrate. A nitride thin film(315) is formed on the substrate. The nitride thin film is comprised of two or more films. A buffer layer(310) is formed between the substrate and the nitride thin film.

Abstract translation: 目的：提供一种用于半导体器件的衬底，使用其的氮薄膜结构及其形成方法，以通过从暴露的衬底生长氮薄膜而获得由于中空结构而产生的ELO（外延横向过度生长）效应 表面围绕中空结构。 构成：衬底（300）用于半导体材料的异质外延薄膜生长。 多个中空结构（305）在基板上具有空的颗粒形状。 在基板上形成氮化物薄膜（315）。 氮化物薄膜由两个或更多个膜组成。 在衬底和氮化物薄膜之间形成缓冲层（310）。

公开(公告)号：KR1020110127897A

公开(公告)日：2011-11-28

申请号：KR1020100047397

申请日：2010-05-20

Applicant: 엘지디스플레이 주식회사 ,  서울대학교산학협력단

Inventor： 곽정훈 ,  강호철 ,  노영훈 ,  이창희 ,  차국헌 ,  이성훈 ,  배완기 ,  임재훈 ,  이동구

IPC: H01L51/52 ,  H01L51/50

CPC classification number: B82Y20/00 ,  H01L21/02601 ,  H01L51/502 ,  H05B33/10 ,  H01L51/0003

Abstract: PURPOSE: A quantum dot light emitting device and a manufacturing method thereof are provided to reduce manufacturing costs by forming a quantum light emitting layer and a charge transport layer by a solution process. CONSTITUTION: An anode(210) is formed in the top of a substrate. A quantum light-emitting layer(230) is formed on the anode and a charge transport particle and a quantum dot are mixed. A cathode is formed on the quantum light-emitting layer. A charge transport particle is an oxide nano particle. The diameter of a quantum dot is 2nm to 20nm. An electron-transport layer(240a) is composed an N-type semiconductor nano particle and is formed on the quantum light-emitting layer.

Abstract translation: 目的：提供量子点发光器件及其制造方法，通过溶液法形成量子发光层和电荷输送层来降低制造成本。 构成：在衬底的顶部形成阳极（210）。 在阳极上形成量子发光层（230），电荷输送粒子和量子点混合。 在量子发光层上形成阴极。 电荷输送粒子是氧化物纳米粒子。 量子点的直径为2nm至20nm。 电子传输层（240a）由N型半导体纳米颗粒组成，并形成在量子发光层上。

公开(公告)号：KR1020100029704A

公开(公告)日：2010-03-17

申请号：KR1020090083292

申请日：2009-09-04

Applicant: 서울대학교산학협력단

Inventor： 윤의준 ,  차국헌 ,  김종학 ,  오세원 ,  우희제

IPC: H01L21/20 ,  H01L33/12

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

Abstract: PURPOSE: A nitride thin film structure and a forming method thereof are provided to manufacture an optoelectronic device with high efficiency and high reliability by growing up nitride semiconductor epitaxial layer with superior material property. CONSTITUTION: A nitride thin film structure and a forming method thereof comprise a substrate(100), a hollow structure(105), and a nitride thin film(120). The nitride film comprises a first nitride film, a second nitride film, and a third nitride film. The first nitride film is form on a buffering layer above a hollow structure. The second nitride film is formed on the first nitride film. The third nitride film is formed on the second nitride film. The hollow structure is spread in the top of the substrate.

Abstract translation: 目的：提供一种氮化物薄膜结构及其形成方法，通过生长具有优异材料性质的氮化物半导体外延层来制造具有高效率和高可靠性的光电子器件。 构成：氮化物薄膜结构及其形成方法包括基板（100），中空结构（105）和氮化物薄膜（120）。 氮化物膜包括第一氮化物膜，第二氮化物膜和第三氮化物膜。 第一氮化物膜形成在中空结构上方的缓冲层上。 第二氮化物膜形成在第一氮化物膜上。 第三氮化物膜形成在第二氮化物膜上。 中空结构扩散在基板的顶部。

公开(公告)号：KR102048955B1

公开(公告)日：2019-11-27

申请号：KR1020170176479

申请日：2017-12-20

Applicant: 서울대학교산학협력단 ,  기초과학연구원 ,  한국과학기술원

Inventor： 박정진 ,  성영은 ,  차국헌 ,  김의태 ,  최장욱

IPC: H01M4/13 ,  H01M4/36 ,  H01M4/62 ,  H01M4/38 ,  H01M10/052

公开(公告)号：KR101520443B1

公开(公告)日：2015-05-14

申请号：KR1020130134213

申请日：2013-11-06

Applicant: 서울대학교산학협력단

Inventor： 차국헌 ,  박새봄

IPC: A61K9/16 ,  A61K49/04 ,  A61K49/08

CPC classification number: A61K49/223 ,  A61K49/22

Abstract: 본발명은, 기체의존재하에그래핀류화합물및 양친성물질을포함하는수용액을음파처리하는단계를포함하는유기마이크로버블복합입자의제조방법과, 그래핀류화합물및 양친성물질을포함하는수용액및 기체를마이크로채널에주입하는단계를포함하는, 유기마이크로버블복합입자의제조방법과, 비활성기체및 이산화탄소로이루어진군에서선택된 1종이상의기체를포함하는코어부; 및그래핀류화합물및 양친성물질을포함하는쉘층;을포함하는유기마이크로버블복합입자와, 상기유기마이크로버블복합입자를포함하는초음파조영제에관한것이다.

Abstract translation: 本发明涉及一种制备有机微气泡复合颗粒的方法，其中该方法包括在气体存在下对包含石墨烯基化合物和两亲物质的水溶液进行超声波处理的步骤，其中该方法包括 将包含石墨烯类化合物和两亲性物质的水溶液和气体注入微通道的步骤; 包含含有选自惰性气体和二氧化碳中的至少一种气体的核心部分的有机微气泡复合颗粒和包含石墨烯类化合物和两亲性物质的壳层; 以及包含所述有机微气泡复合颗粒的超声造影剂。

公开(公告)号：KR1020110106176A

公开(公告)日：2011-09-28

申请号：KR1020100025437

申请日：2010-03-22

Applicant: 삼성디스플레이 주식회사 ,  서울대학교산학협력단

Inventor： 강종혁 ,  신중한 ,  박재병 ,  이동훈 ,  차국헌 ,  이성훈 ,  배완기 ,  임재훈

IPC: H01L51/54 ,  H01L51/50 ,  C09K11/06

CPC classification number: C09K11/025 ,  C08F8/06 ,  C09K11/08 ,  C08F116/34 ,  H01L51/0043 ,  H01L51/0077 ,  H01L51/502

Abstract: Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.

公开(公告)号：KR1020100069105A

公开(公告)日：2010-06-24

申请号：KR1020080127691

申请日：2008-12-16

Applicant: 삼성전자주식회사 ,  서울대학교산학협력단

Inventor： 장은주 ,  차국헌

IPC: C08K9/04 ,  C08K3/20 ,  C08K3/10 ,  B82Y40/00

CPC classification number: C09K11/02 ,  B82Y30/00 ,  C08J5/005 ,  C08J2387/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/502 ,  H01L51/426

Abstract: PURPOSE: A method for manufacturing nanoparticle/block copolymer complex is provided to improve electrical, magnetic, optical, chemical, and mechanical properties of the nanoparticle without modifying the surface of the nanoparticle. CONSTITUTION: A method for manufacturing nanoparticle/block copolymer complex(1) includes a step of forming micelle through self-assembly by putting the block copolymer(A-b-B) with two block repeating units into a solvent. The solubility variables of organic ligand, the block copolymer, and the solvent satisfy a chemical formula 1, a chemical formula 2, or a chemical formula 3. The chemical formula 1 is 29

Abstract translation: 目的：提供制造纳米颗粒/嵌段共聚物复合物的方法，以改善纳米颗粒的电，磁，光学，化学和机械性能，而不改变纳米颗粒的表面。 构成：制造纳米粒子/嵌段共聚物络合物（1）的方法包括通过将具有两个嵌段重复单元的嵌段共聚物（A-b-B）嵌入溶剂中，通过自组装形成胶束的步骤。 有机配体，嵌段共聚物和溶剂的溶解度变量满足化学式1，化学式2或化学式3.化学式1为29 <=δ_S - δ_A。化学式2为 化学式3是1δ_L-δ_Al<= 5或lδ_L-δ_B1<= 5。在化学式中，δ_S是溶剂的溶解度变量。 δ_A是嵌段重复单元A的溶解度变量。δ_B是嵌段重复单元B的溶解度变量。δ_L是配体的溶解度变量。