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公开(公告)号：KR1020120084838A
公开(公告)日：2012-07-31
申请号：KR1020110006113
申请日：2011-01-21
Applicant: 포항공과대학교 산학협력단
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L2933/0091
Abstract: PURPOSE: A manufacturing method of a light emitting diode and a light emitting diode manufactured thereby are provided to improve optical extraction efficiency by controlling an inclination angle of an uneven region generated on a semiconductor layer. CONSTITUTION: An active layer and a second semiconductor layer are successively formed on a first semiconductor layer. A nanostructure is coated on the second semiconductor layer. An uneven portion is formed on the second semiconductor layer by dry-etching the second semiconductor layer by using the nanostructure as a mask. The nanostructure controls an inclination angle of the uneven region generated on the semiconductor layer by using a material which is easily dry-etched and setting a dry etching condition in consideration of an etching speed difference between the nanostructure and the second semiconductor layer.
Abstract translation: 目的：提供由其制造的发光二极管和发光二极管的制造方法，以通过控制在半导体层上产生的不均匀区域的倾斜角来提高光学提取效率。 构成：在第一半导体层上依次形成有源层和第二半导体层。 纳米结构被涂覆在第二半导体层上。 通过使用纳米结构作为掩模对第二半导体层进行干蚀刻，在第二半导体层上形成凹凸部。 纳米结构通过使用容易干蚀刻的材料并考虑到纳米结构和第二半导体层之间的蚀刻速度差来设定干蚀刻条件来控制在半导体层上产生的不平坦区域的倾斜角度。
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公开(公告)号：KR1020120015733A
公开(公告)日：2012-02-22
申请号：KR1020100078115
申请日：2010-08-13
Applicant: 서울바이오시스 주식회사 , 포항공과대학교 산학협력단
CPC classification number: H01L33/40 , H01L33/0095 , H01L33/32 , H01L33/405 , H01L2933/0016
Abstract: PURPOSE: A semiconductor light emitting device having an ohmic electrode structure and a manufacturing method thereof are provided to control deterioration of constant resistance due to heat by arranging top diffusion barrier layer between a contact layer and a protective layer. CONSTITUTION: A light-emitting structure(120) comprises an n-type semiconductor layer(121), an active layer(122), and a p-type semiconductor layer(123). An n-type electrode(180) is formed on the upper side of the n-type semiconductor layer. The n-type electrode comprises a bottom diffusion barrier layer(181), a contact layer(182), a diffusion barrier layer(183), and a protective layer(184) which is successively formed on the light-emitting structure. A p-type electrode(130) is formed on the lower side of the p-type semiconductor layer. A bearing substrate(170) is attached to the lower side of the p-type electrode.
Abstract translation: 目的：提供一种具有欧姆电极结构的半导体发光器件及其制造方法，以通过在接触层和保护层之间布置顶部扩散阻挡层来控制由于热导致的恒定电阻的劣化。 构成：发光结构（120）包括n型半导体层（121），有源层（122）和p型半导体层（123）。 n型电极（180）形成在n型半导体层的上侧。 n型电极包括依次形成在发光结构上的底部扩散阻挡层（181），接触层（182），扩散阻挡层（183）和保护层（184）。 p型电极（130）形成在p型半导体层的下侧。 轴承衬底（170）附接到p型电极的下侧。
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公开(公告)号：KR1020120003150A
公开(公告)日：2012-01-10
申请号：KR1020100063839
申请日：2010-07-02
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/20
CPC classification number: H01L21/185 , H01L21/02389 , H01L21/02425 , H01L21/02491 , H01L21/324
Abstract: PURPOSE: A method for bonding a gallium nitride semiconductor with a metal substrate and a semiconductor device are provided to improve electric conductivity and thermal conductivity by using a conductive diffusion preventing layer including ruthenium. CONSTITUTION: A first conductive diffusion preventing layer and a first metal bonding layer are successively laminated on a gallium nitride semiconductor(S100). A second conductive diffusion preventing layer and a second metal bonding layer are successively laminated on a metal substrate(S200). The first metal bonding layer is bonded with the second metal bonding layer(S300).
Abstract translation: 目的：提供一种用于将氮化镓半导体与金属基板和半导体器件接合的方法，以通过使用包括钌的导电扩散防止层来改善导电性和导热性。 构成：在氮化镓半导体上依次层叠第一导电性扩散防止层和第一金属接合层（S100）。 第二导电扩散防止层和第二金属接合层依次层叠在金属基板上（S200）。 第一金属接合层与第二金属接合层接合（S300）。
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公开(公告)号：KR101439749B1
公开(公告)日：2014-09-17
申请号：KR1020130025068
申请日：2013-03-08
Applicant: 주식회사 포스코 , 포항공과대학교 산학협력단
IPC: H01L33/44
CPC classification number: H01L33/44 , H01L2933/0025
Abstract: The present invention relates to a light emitting diode device having a good anti-corrosion property and a manufacturing method thereof. More particularly, the present invention relates to a light emitting diode device having a good anti-corrosion property to withstand a wet etching process for improving the light extraction efficiency of a light emitting diode, and a manufacturing method thereof. A method of manufacturing a light emitting diode device according to one embodiment of the present invention can include a step of preparing a planarization substrate and a light emitting diode; a step of obtaining a light emitting diode device by bonding the planarization substrate and the light emitting diode; and a step of forming a protection layer on an exposed surface of the planarization substrate bonded to the light emitting diode.
Abstract translation: 本发明涉及具有良好的防腐蚀性能的发光二极管器件及其制造方法。 更具体地说，本发明涉及具有良好的耐腐蚀性能以耐受湿法蚀刻工艺以提高发光二极管的光提取效率的发光二极管器件及其制造方法。 根据本发明的一个实施例的制造发光二极管器件的方法可以包括制备平坦化衬底和发光二极管的步骤; 通过结合平坦化基板和发光二极管获得发光二极管器件的步骤; 以及在与发光二极管结合的平坦化衬底的暴露表面上形成保护层的步骤。
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公开(公告)号：KR1020140031514A
公开(公告)日：2014-03-13
申请号：KR1020120097244
申请日：2012-09-03
Applicant: 포항공과대학교 산학협력단 , 서울바이오시스 주식회사 , 주식회사 글로우원
CPC classification number: H01L33/22 , H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: Disclosed are a light emitting diode (LED) and a method of manufacturing the same. The LED comprises: a light emitting structure including a upper semiconductor layer, an activating layer, and a lower semiconductor layer; and a refractive index adjusting layer index located on the upper semiconductor layer, wherein the refractive index adjusting layer has a nanopattern formed thereon. Therefore, provided is the LED capable of improving light extraction efficiency because a total internal reflection of the LED is minimized, simplifying a manufacturing process, and having high reliability.
Abstract translation: 公开了一种发光二极管（LED）及其制造方法。 LED包括：发光结构，包括上半导体层，激活层和下半导体层; 以及位于所述上半导体层上的折射率调节层折射率，其中所述折射率调节层具有形成在其上的纳米图案。 因此，提供了能够提高光提取效率的LED，因为LED的全内反射最小化，简化了制造工艺，并且具有高可靠性。
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Patent Agency Ranking
公开(公告)号：KR1020130120107A
公开(公告)日：2013-11-04
申请号：KR1020120043115
申请日：2012-04-25
Applicant: 포항공과대학교 산학협력단 , 서울바이오시스 주식회사 , 주식회사 글로우원
CPC classification number: H01L33/22 , H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0091
Abstract: A light emitting diode having improved light extraction efficiency and a method for manufacturing the same are disclosed. The light emitting diode according to the present invention comprises; a light emitting structure including a lower semiconductor layer, an active layer, and an upper semiconductor layer; a light extraction structure which is located on the light emitting structure and has a refractive index lower than a refractive index of the upper semiconductor layer. The light extraction structure comprises a consolidation material layer and a nano pattern on the upper side. The upper side of the light extraction structure has a refractive index lower than a refractive index of the lower side. The light extraction structure in which the upper side has the refractive index lower than the refractive index of the lower side reduces total internal reflection within an element of light and improves the light extraction efficiency of the light emitting diode. The method for manufacturing the light emitting diode according to the present invention provides a method for manufacturing a reliable light emitting diode with a simplified process by including the light extraction structure having the consolidation material layer from a material with viscosity.
Abstract translation: 公开了一种具有改进的光提取效率的发光二极管及其制造方法。 根据本发明的发光二极管包括： 包括下半导体层，有源层和上半导体层的发光结构; 光提取结构，位于发光结构上，折射率低于上半导体层的折射率。 光提取结构包括上侧的固结材料层和纳米图案。 光提取结构的上侧的折射率低于下侧的折射率。 上侧具有低于下侧的折射率的折射率的光提取结构减少了光元件内的全内反射，并提高了发光二极管的光提取效率。 根据本发明的制造发光二极管的方法提供了一种通过简单的工艺制造可靠的发光二极管的方法，包括具有粘性的材料的具有固结材料层的光提取结构。
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37.发明公开나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 有权纳米印花模制造方法，使用通过该方法制造的纳米印花模具的发光二极管制造方法和发光二极管
公开(公告)号：KR1020130060662A
公开(公告)日：2013-06-10
申请号：KR1020110126844
申请日：2011-11-30
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L33/0079 , B82Y40/00 , H01L33/007 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0091
Abstract: PURPOSE: A method for manufacturing a nano imprint mold without using a separate wet and dry etching, a method for manufacturing a light emitting diode using the same, and the light emitting diode manufactured thereby are provided to obtain high light extracting efficiency by forming a nano pattern in a large scaled area with a low cost by a simplified process. CONSTITUTION: A method for manufacturing a nano imprint mold comprises: a step of forming a nano pattern in a dimple shape through an anodizing method on a substrate; a step of forming a nano pattern in a hemisphere shape corresponding to the nano pattern of the dimple shape in a first nano imprint mold; a step of separating the first nano imprint mold in which the nano pattern of the hemisphere shape is formed from the substrate; a step of forming the nano pattern of the dimple shape corresponding to the nano pattern of the hemisphere shape in a second nano imprint mold; and a step of separating the second nano imprint mold in which the nano pattern of the dimple shape is formed from the first nano imprint mold. [Reference numerals] (110) n-type nitride semiconductor layer; (120) Light emitting layer; (130) p-type nitride semiconductor layer; (140) p-type electrode; (150) Conductive substrate; (170) n-type electrode
Abstract translation: 目的：提供一种不使用单独的湿式和干式蚀刻的纳米压印模具的制造方法，使用其制造发光二极管的方法和由此制造的发光二极管，以通过形成纳米压电模具来获得高的光提取效率 通过简化的过程在低成本的大规模区域中的模式。 构成：制造纳米压印模具的方法包括：通过阳极氧化方法在衬底上形成凹坑形状的纳米图案的步骤; 在第一纳米压印模具中形成对应于凹坑形状的纳米图案的半球形状的纳米图案的步骤; 从基板分离出形成半球形状的纳米图案的第一纳米压印模具的步骤; 在第二纳米压印模具中形成对应于半球形状的纳米图案的凹坑形状的纳米图案的步骤; 以及从第一纳米压印模具分离其中形成凹坑形状的纳米图案的第二纳米压印模具的步骤。 （110）n型氮化物半导体层; （120）发光层; （130）p型氮化物半导体层; （140）p型电极; （150）导电基板; （170）n型电极
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公开(公告)号：KR1020130053167A
公开(公告)日：2013-05-23
申请号：KR1020110118773
申请日：2011-11-15
Applicant: 주식회사 포스코 , 포항공과대학교 산학협력단
IPC: H01L21/02
CPC classification number: H01L21/185 , H01L21/28026 , H01L21/7806 , H01L24/27
Abstract: PURPOSE: A method for bonding a wafer and an electronic device manufactured thereby are provided to improve the bonding force of a semiconductor substrate by improving the planarization of a substrate. CONSTITUTION: A planarization substrate(11) is formed on a motherboard(12). The planarization substrate is separated from the motherboard. Metal bonding layers(13) are formed on the semiconductor substrate and the planarization substrate, respectively. The semiconductor substrate is bonded to the planarization substrate after two metal bonding layers are arranged to face each other.
Abstract translation: 目的：提供一种用于接合晶片和由其制造的电子器件的方法，以通过改善衬底的平坦化来改善半导体衬底的结合力。 构成：平板化基板（11）形成在母板（12）上。 平面化基板与主板分离。 金属接合层（13）分别形成在半导体基板和平坦化基板上。 在将两个金属接合层彼此相对配置之后，将半导体基板接合到平坦化基板。
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公开(公告)号：KR101229063B1
公开(公告)日：2013-02-04
申请号：KR1020110006113
申请日：2011-01-21
Applicant: 포항공과대학교 산학협력단
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L2933/0091
Abstract: 본 발명은 건식에칭 시 나노구조체와 반도체층 간의 에칭속도(에칭비) 차이를 이용하여 건식에칭 조건의 변화를 통해 반도체층에 생성되는 요철부의 경사각을 조절함으로써, 광 추출 효율이 향상된 발광다이오드를 제조하는 방법과 이 방법에 의해 제조된 발광다이오드에 관한 것이다.
본 발명은 제1 반도체층 상에 활성층 및 제2 반도체층이 순차적으로 형성된 발광다이오드의 제조방법으로서, 상기 제2 반도체층 상에 나노구조체를 코팅하는 단계와, 상기 나노구조체를 마스크로 이용하여 상기 제2 반도체층과 함께 건식에칭하여 상기 제2 반도체층에 요철부를 형성하는 단계를 포함하고, 상기 나노구조체는 상기 제2 반도체층에 비해 건식에칭이 용이한 물질을 사용하고, 상기 제2 반도체층과 나노구조체 사이의 에칭속도 차이를 고려하여 건식에칭 조건을 설정함으로써, 상기 제2 반도체에 생성된 요철부의 측면 경사각을 조절하는 것을 특징으로 한다.-
40.发明授权나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 有权纳米印花模制造方法，使用通过该方法制造的纳米印花模具的发光二极管制造方法和发光二极管
公开(公告)号：KR101215299B1
公开(公告)日：2012-12-26
申请号：KR1020100139089
申请日：2010-12-30
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L33/32 , B82Y40/00 , H01L21/302 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/36 , H01L33/44 , H01L2933/0091
Abstract: 본발명은나노임프린트몰드제조방법, 이를이용한발광다이오드및 그제조방법에관한것이다. 본발명에따른발광다이오드제조방법은임시기판상에 n형질화물반도체층, 발광층및 p형질화물반도체층을형성하는단계, p형질화물반도체층상에 p형전극을형성하는단계, p형전극상에도전성기판을형성하는단계, 임시기판을제거하여 n형질화물반도체층을노출시키는단계, n형질화물반도체층상에나노임프린트레지스트층을형성하는단계, 나노임프린트몰드를나노임프린트레지스트층에가압하여나노패턴을나노임프린트레지스트층에전사하는단계, 나노패턴이형성된나노임프린트레지스트층으로부터나노임프린트몰드를분리하는단계및 나노패턴이형성된나노임프린트레지스트층의일부를식각하여 n형전극을형성하는단계를포함하여구성된다. 본발명에따르면, 발광다이오드의광추출효율을향상시키기위한나노패턴을효율적이고경제적으로형성할수 있는나노임프린트몰드제조방법, 이나노임프린트몰드를이용한발광다이오드제조방법및 발광다이오드가제공되는효과가있다.
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