公开(公告)号：KR1020110081519A

公开(公告)日：2011-07-14

申请号：KR1020100001720

申请日：2010-01-08

Applicant: 한국과학기술원

Inventor： 김상욱 ,  김주영 ,  최성율 ,  김지은 ,  정성준 ,  한태희

IPC: B82B3/00 ,  B82B1/00

CPC classification number: C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01P2004/64 ,  C08L25/06

Abstract: PURPOSE: A method for manufacturing a graphene nano structure using a self-assembling material is provided to obtain a parallel type graphene nano structure by applying a lithography process with respect to a graphene or graphene oxide thin film. CONSTITUTION: A graphene thin film is formed on a substrate. A self-assembling material thin film is formed on the graphene thin film. A self-assembling material includes block copolymer, peptide, virus, and protein. The self-assembling material is thermally treated at temperature between 200 and 300 degrees Celsius for 40 to 60 hours or undergoes a solvent-annealing process. A self-assembling nano structure is formed. The graphene thin film is etched using the self-assembling nano structure as a mask.

Abstract translation: 目的：提供使用自组装材料制造石墨烯纳米结构的方法，以通过对石墨烯或氧化石墨烯薄膜进行光刻工艺来获得平行型石墨烯纳米结构。 构成：在基板上形成石墨烯薄膜。 在石墨烯薄膜上形成自组装材料薄膜。 自组装材料包括嵌段共聚物，肽，病毒和蛋白质。 自组装材料在200至300摄氏度的温度下热处理40至60小时或进行溶剂退火工艺。 形成自组装纳米结构。 使用自组装纳米结构作为掩模蚀刻石墨烯薄膜。

公开(公告)号：KR102172481B1

公开(公告)日：2020-11-02

申请号：KR1020140011554

申请日：2014-01-29

Applicant: 한국과학기술원

Inventor： 최성율 ,  박익준 ,  박하민 ,  하영욱

IPC: H01L29/86 ,  H01L33/00

公开(公告)号：KR101792953B1

公开(公告)日：2017-11-20

申请号：KR1020160083620

申请日：2016-07-01

Applicant: 건국대학교 산학협력단 ,  한국과학기술원

Inventor： 정현종 ,  김현철 ,  이한별 ,  김학성 ,  최성율

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/45 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L21/04 ,  H01L21/285 ,  H01L29/06 ,  H01L29/47

Abstract: 두께에따라에너지밴드간격이달라지는특성을갖는 2차원반도체, 이의제조방법, 및이를포함하는반도체소자가개시된다. 일실시예에따른 2차원반도체는제1 두께로형성된제1 레이어와, 제2 두께로형성된제2 레이어를포함하고, 상기제1 두께와상기제2 두께는서로상이하고, 상기제1 레이어는제1 전극과제1 접합을형성하고, 상기제2 레이어는제2 전극과제2 접합을형성한다.

公开(公告)号：KR101650724B1

公开(公告)日：2016-08-25

申请号：KR1020150100046

申请日：2015-07-14

Applicant: 한국과학기술원

Inventor： 최성율 ,  임성갑 ,  김종윤 ,  박홍근

IPC: H01L51/56 ,  H01L51/52 ,  C01B31/04 ,  H01L29/16

Abstract: 본발명은 2차원물질층; 상기 2차원물질층상에형성된소수성물질층; 및상기소수성물질층상에형성된중간물질층을포함하여구성되며, 상기 2차원물질층, 소수성물질층및 중간물질층이교대로반복되어다층구조를형성하는것을특징으로하는봉지막에관한것이다.

Abstract translation: 本发明涉及一种封装层。 封装层包括2D材料层; 形成在2D材料层上的疏水性材料层; 以及形成在疏水材料层上的中间材料层。 2D材料层，疏水材料层和中间材料层被重复堆叠以形成多层结构。 因此，可以提高封装层的氧气和湿气阻塞性能。

公开(公告)号：KR101127742B1

公开(公告)日：2012-03-22

申请号：KR1020100091217

申请日：2010-09-16

Applicant: 한국과학기술원

Inventor： 이건재 ,  최인성 ,  최성율 ,  홍병희

IPC: C01B31/02 ,  B01J19/08 ,  C23C16/26

CPC classification number: C01B32/184 ,  B01J19/121 ,  C23C16/26

Abstract: PURPOSE: A method for manufacturing graphene using laser, the graphene manufactured by the same, and an apparatus for manufacturing the same are provided to manufacture graphene of desired patterns by selectively irradiating laser to a desired substrate region. CONSTITUTION: A method for manufacturing graphene includes the following: reacting gas containing carbon is in contact with a substrate(201); laser beam is irradiated to the substrate in contact with the reacting gas to decompose the reacting gas; graphene(204) is grown on the substrate based on the decomposition of the reacting gas. No metal catalyst layer is included in the substrate. The substrate includes a silicon oxide layer(202) as an upper layer. Laser beam is irradiated to one region of the substrate. The graphene is grown at the laser beam irradiated region of the substrate. The temperature of the graphene growing process is between 900 and 2000 degrees Celsius.

Abstract translation: 目的：使用激光制造石墨烯的方法，由其制造的石墨烯及其制造装置被提供以通过选择性地将激光照射到期望的基底区域来制造所需图案的石墨烯。 构成：用于制造石墨烯的方法包括以下：含碳的反应气体与基底（201）接触; 将激光束照射到与反应气体接触的基板上以分解反应气体; 基于反应气体的分解，在基板上生长石墨烯（204）。 基板中不包含金属催化剂层。 衬底包括作为上层的氧化硅层（202）。 激光束照射到基板的一个区域。 石墨烯在衬底的激光束照射区域生长。 石墨烯生长过程的温度在900和2000摄氏度之间。