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公开(公告)号：KR1020100080336A
公开(公告)日：2010-07-08
申请号：KR1020090101137
申请日：2009-10-23
Applicant: 삼성디스플레이 주식회사 , 한국과학기술원
CPC classification number: G03F7/0002 , B82Y30/00 , B82Y40/00 , G03F7/004 , G03F7/168
Abstract: PURPOSE: A method for manufacturing a nanostructure is provided to easily form the nanostructure which is successively arranged on a substrate using a block copolymer and to improve the productivity of the nanostructure and a polarizing plate. CONSTITUTION: A method for manufacturing a nanostructure comprises the following steps: forming a photoresist pattern on a substrate(110) including a neutral layer; forming a sacrificial structure including a first sacrificial block and a second sacrificial block using a first thin film including a first block copolymer; eliminating the first sacrificial block from the sacrificial structure; forming a chemical pattern(122) by oxidizing the neutral layer using the second sacrificial block as a mask; removing the second sacrificial block and the photoresist pattern from the substrate including the chemical pattern; and forming the nanostructure which is extensively arranged on the substrate using a second thin film including the second block copolymer.
Abstract translation: 目的：提供一种制造纳米结构体的方法，以容易地形成纳米结构，其使用嵌段共聚物连续排列在基板上，并提高纳米结构和偏振片的生产率。 构成：制造纳米结构的方法包括以下步骤：在包括中性层的基底（110）上形成光刻胶图案; 使用包括第一嵌段共聚物的第一薄膜形成包括第一牺牲块和第二牺牲块的牺牲结构; 从牺牲结构中消除第一牺牲块; 通过使用第二牺牲块作为掩模来氧化中性层来形成化学图案（122）; 从包括所述化学图案的所述衬底去除所述第二牺牲块和所述光致抗蚀剂图案; 以及使用包括第二嵌段共聚物的第二薄膜，形成广泛布置在基板上的纳米结构。
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公开(公告)号：KR100885666B1
公开(公告)日：2009-02-25
申请号：KR1020070051020
申请日：2007-05-25
Applicant: 한국과학기술원
CPC classification number: B82Y30/00 , B81C1/00031 , B81C99/009 , B81C2201/0149 , C09D153/00
Abstract: 본 발명은 블록공중합체의 나노구조체 및 그 제조방법에 관한 것으로, 보다 상세하게는, (a) 산화물 기판을 형성하는 단계, (b) 상기 산화물 표면에 블록공중합체 박막을 형성시키는 단계 및 (c) 상기 블록공중합체를 열처리하여 자기조립 나노구조체를 형성시키는 단계를 포함하는, 블록공중합체의 나노구조체 및 그 제조방법에 관한 것이다.
본 발명에 따르며, 다양한 종류의 산화물 기판 상에 블록공중합체 나노구조를 포함하는 나노구조체를 제공하는 효과가 있으며, 나노구조체 제조시에 사용된 블록공중합체를 구성하는 각 블록의 상대적인 조성비에 따라 블록공중합체의 자기조립 나노구조의 형태가 달라지므로, 이렇게 여러가지 형태로 나타내는 나노구조를 이용하여 다양한 용도로 상기 나노구조체를 용이하게 활용할 수 있다.
산화물, 전도성 산화물, 유기단분자, 고분자, 블록공중합체-
3.发明授权2차원 전사층 및 블록공중합체를 이용한 나노구조체 제조방법, 이에 의하여 제조된 나노구조체 및 그 응용소자 有权使用二维转印层制造纳米结构的方法，由其制造的纳米结构以及包含该纳米结构的涂布装置
公开(公告)号：KR101356010B1
公开(公告)日：2014-01-28
申请号：KR1020120061923
申请日：2012-06-11
Applicant: 한국과학기술원
Abstract: 2차원 전사층을 이용한 나노구조체 제조방법으로, 기판상에 2차원 전사층을 적층하는 단계; 상기 적층된 2차원 전사층상에 주형 필름을 적층한 후, 이를 패터닝하여 나노주형을 제조하는 단계; 및 상기 형성된 나노주형에 나노물질을 적층하여, 나노구조체를 형성하는 단계를 포함하는 것을 특징으로 하는 나노구조체 제조방법이 제공된다.
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公开(公告)号：KR1020100089021A
公开(公告)日：2010-08-11
申请号：KR1020100003096
申请日：2010-01-13
Applicant: 한국과학기술원
CPC classification number: G03F7/0002 , B82Y30/00 , B82Y40/00 , G03F7/004 , G03F7/168
Abstract: PURPOSE: A nanostructure of a block copolymer in which the orientation is controlled is provided to prevent the degradation of performance of a device in a semiconductor production process by controlling the orientation of the block copolymer using the altitude difference of an organic photoresist cross pattern and to manufactured the block copolymer which is arranged in a desired pattern. CONSTITUTION: A method for manufacturing a nanostructure of a block copolymer in which the orientation is controlled comprises the following steps: forming a neutral layer on a substrate; forming an organic photoresist cross pattern on the neutral layer using lithography; forming a block copolymer thin film on the substrate having the crossed pattern; and forming a self-assembled nanostructure by thermally treating the block copolymer. The neutral layer is formed using an organic single molecular layer or through an etching process.
Abstract translation: 目的：提供其中控制取向的嵌段共聚物的纳米结构，以通过使用有机光致抗蚀剂交叉图案的高度差控制嵌段共聚物的取向来防止半导体制造工艺中的器件性能的劣化，并且 制造了以所需图案排列的嵌段共聚物。 构成：制造其中取向取向的嵌段共聚物的纳米结构的方法包括以下步骤：在基材上形成中性层; 使用光刻在中性层上形成有机光致抗蚀剂交叉图案; 在具有交叉图案的基板上形成嵌段共聚物薄膜; 并通过热处理嵌段共聚物形成自组装纳米结构。 使用有机单分子层或通过蚀刻工艺形成中性层。
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公开(公告)号：KR1020100068014A
公开(公告)日：2010-06-22
申请号：KR1020080126655
申请日：2008-12-12
Abstract: PURPOSE: A nanostructure of block copolymer having patterned structure is provided to control organic photo resister pattern and to manufacture the nanostructure of desired form. CONSTITUTION: A method for manufacturing a nanostructure of block copolymer using an organic photoresist pattern comprises: a step of forming neutral layer on a substrate; a step of forming the organic photoresist pattern using lithography; a step of forming block copolymer thin film on the patterned substrate; and a step of performing thermal treatment on the block copolymer to form a self-assembled nanostructure.
Abstract translation: 目的：提供具有图案结构的嵌段共聚物的纳米结构以控制有机光电阻图案并制造所需形式的纳米结构。 构成：使用有机光致抗蚀剂图案制造嵌段共聚物的纳米结构的方法包括：在基材上形成中性层的步骤; 使用光刻形成有机光致抗蚀剂图案的步骤; 在图案化衬底上形成嵌段共聚物薄膜的步骤; 以及对所述嵌段共聚物进行热处理以形成自组装纳米结构的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020170048004A
公开(公告)日：2017-05-08
申请号：KR1020150148827
申请日：2015-10-26
CPC classification number: H01L21/30604 , H01L21/02524 , H01L21/3085 , H01L23/481 , H01L29/413
Abstract: 그래핀층을포함하는전도체및 그제조방법에관해개시되어있다. 개시된전도체는기판의상부에배치된나노패턴과, 상기나노패턴의상부에배치된그래핀층을포함할수 있다. 상기나노패턴은다양한형상을구비할수 있으며, 그래핀층과상호작용할수 있는물질을포함할수 있다. 전도체에포함된나노패턴과그래핀층의상호작용을통해, 전기적특성은유지될수 있으나, 열전달특성이저하되는전도체를제공할수 있다.
Abstract translation: 公开了包括石墨烯层的导体及其制造方法。 所公开的导体可以包括设置在衬底的顶部上的纳米图案和设置在纳米图案的顶部上的石墨烯层。 纳米图案可以具有各种形状并且可以包括可以与石墨烯层相互作用的材料。 通过石墨烯层与导体中包含的纳米图案的相互作用，可以保持电特性，但可以提供具有减小的传热特性的导体。
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公开(公告)号：KR1020120092261A
公开(公告)日：2012-08-21
申请号：KR1020110012189
申请日：2011-02-11
Applicant: 한국과학기술원
IPC: C08J5/18 , C08J7/04 , C08F293/00 , B82B3/00
Abstract: PURPOSE: A manufacturing method of a block copolymer film is provided to manufacture a block copolymer film in which a nano area is arranged to be perpendicular to a surface even on a non-flat substrate, because of mechanical flexibility and elongation, etc which are inherent properties of a graphene film. CONSTITUTION: A manufacturing method of a block copolymer film comprises: a step of laminating the graphene oxide film on a substrate; a step of manufacturing a graphene film by reducing the laminated graphene oxide film; a step of laminating a block copolymer on the graphene film, and self-assembling the block copolymer. The lamination of the graphene oxide film is conducted by spin-casting the graphene oxide solution on the substrate. The reduction of the graphene oxide film is conducted by heat treatment or chemical treatment.
Abstract translation: 目的：提供嵌段共聚物膜的制造方法，其制造嵌段共聚物膜，其中纳米区域即使在非平坦基材上也垂直于表面，因为机械柔性和伸长率等是固有的 石墨烯膜的性质。 构成：嵌段共聚物膜的制造方法包括：将石墨烯氧化膜层压在基板上的工序; 通过还原层压石墨烯氧化膜来制造石墨烯膜的步骤; 在石墨烯膜上层压嵌段共聚物的步骤，并自组装嵌段共聚物。 通过将石墨烯氧化物溶液旋涂在基材上来进行氧化石墨烯氧化膜的层压。 通过热处理或化学处理进行氧化石墨烯氧化膜的还原。
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公开(公告)号：KR101148208B1
公开(公告)日：2012-05-25
申请号：KR1020080126655
申请日：2008-12-12
Abstract: PURPOSE: A nanostructure of block copolymer having patterned structure is provided to control organic photo resister pattern and to manufacture the nanostructure of desired form. CONSTITUTION: A method for manufacturing a nanostructure of block copolymer using an organic photoresist pattern comprises: a step of forming neutral layer on a substrate; a step of forming the organic photoresist pattern using lithography; a step of forming block copolymer thin film on the patterned substrate; and a step of performing thermal treatment on the block copolymer to form a self-assembled nanostructure.
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10.发明授权
公开(公告)号：KR101093204B1
公开(公告)日：2011-12-12
申请号：KR1020100003096
申请日：2010-01-13
Applicant: 한국과학기술원
Abstract: 본발명은유기물포토레지스트교차패턴에의해배향이제어된블록공중합체의나노구조체및 그제조방법에관한것으로, 보다상세하게는, 리소그라피에의해형성된유기물포토레지스트교차패턴의높이차를이용하여블록공중합체의배향을제어함으로써제조된나노구조체및 그제조방법에관한것이다. 본발명에따르면, 높이차가있는요철들로구성되는교차패턴에의해블록공중합체를원하는방향으로원하는만큼만배향시킬수 있어, 반도체공정을비롯한실제산업공정적용시에디바이스(device)의성능저하를방지할수 있고, 원하는형태로배향된블록공중합체를제작할수 있다.
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