公开(公告)号：KR1020080065079A

公开(公告)日：2008-07-11

申请号：KR1020070002020

申请日：2007-01-08

Applicant: 한국산업기술평가원(관리부서:요업기술원)

Inventor： 허승헌 ,  류도형 ,  공은배

IPC: C23C24/04 ,  C23C4/00 ,  C23C4/02

Abstract: A tube type material-containing deposition film and a method of forming the same are provided to use directly in electronic devices having direct bonds between a substrate and a tube type material, and to use as an electron emission device due to more dangling bonds compared than an original tube type material. A tube type material-containing deposition film comprises: a plurality of hollow tube type material pieces whose at least one ends are open, where closed ends of the hollow tube type material pieces are grown from a substrate and thus do not have a fixed shape, and the deposition film does not contain an additional binder resin. A method of forming the tube type material-containing deposition film comprises the steps of: forming hollow tube type material into aerosols(9), and forming a thin film by colliding the aerosols to a base material in a speed more than 30m/s.

Abstract translation: 提供含管材料的沉积膜及其形成方法直接用于在基板和管型材料之间具有直接键合的电子器件中，并且由于更多悬挂键而用作电子发射器件，比例比 原始管型材料。 含管状材料的沉积膜包括：多个中空管型材料片，其至少一端是开口的，其中中空管型材料片的封闭端从衬底生长，因此不具有固定形状， 并且沉积膜不含另外的粘合剂树脂。 形成含管状材料的沉积膜的方法包括以下步骤：将中空管型材料形成气溶胶（9），并通过以大于30m / s的速度将气溶胶与基材碰撞形成薄膜。

公开(公告)号：KR1020080029378A

公开(公告)日：2008-04-03

申请号：KR1020060095428

申请日：2006-09-29

Applicant: 한국산업기술평가원(관리부서:요업기술원)

Inventor： 허승헌 ,  류도형 ,  김창열 ,  조광연 ,  송철규

IPC: B05D1/02 ,  B05D3/02

Abstract: A positive-pressure coating method using partial positive pressure and micro-droplets and a positive-pressure coating apparatus are provided to produce thin films easily by naturally moving precursor complexes to a substrate unit by deriving partial high pressure or positive pressure by a vaporized solvent and an additive. A positive-pressure coating method using partial positive pressure and micro-droplets comprises the steps of: heating a substrate positioned at the inner lower end of an integral reactor(10); injecting a precursor made of deposited material, into the reactor through at least one spraying unit(50,60) installed in at least a portion of the inner upper end of the integral reactor; and depositing the atomized precursor on the substrate by inverting the internal pressure distribution of the reactor while the precursor moves down to the substrate.

Abstract translation: 提供使用部分正压和微滴的正压涂覆方法和正压涂覆装置，以通过通过汽化溶剂衍生部分高压或正压将前体复合物自然地移动到基板单元而容易地制备薄膜， 一种添加剂。 使用部分正压和微滴的正压涂覆方法包括以下步骤：加热位于整体反应器（10）的内下端的基板; 将由沉积材料制成的前体注入至少一个安装在所述整体式反应器内部上端的一部分的喷射单元（50,60）中的反应器中; 以及通过在所述前体向下移动到所述衬底的同时反转所述反应器的内部压力分布而将所述雾化的前体沉积在所述衬底上。

公开(公告)号：KR100576609B1

公开(公告)日：2006-05-04

申请号：KR1020030034680

申请日：2003-05-30

Applicant: 한국산업기술평가원(관리부서:요업기술원) ,  주식회사 금강쿼츠

Inventor： 류도형 ,  정영근 ,  이선우 ,  오철상

IPC: C03C10/14

Abstract: 본 발명은 반도체 장치 등에 사용되는 내플라즈마성 부재에 관한 것으로, 보다 상세하게는 쿼츠 모재상에 졸겔법에 의해 형성된 플라즈마 내식성 코팅층을 포함하는 플라즈마 내식성 부재에 관한 것이다. 본 발명은 쿼츠 모재와, 상기 쿼츠 모재상에 형성되는 조밀한 제1층과, 상기 쿼츠 모재와 상기 제1층과의 사이에 개재되며 상기 제1층보다 높은 기공율을 갖는 완충층으로 구성된 코팅 구조를 포함하는 플라즈마 내식성 부재를 제공한다. 본 발명에 따르면 쿼츠 모재에 형성된 코팅층에 발생한 잔류 응력을 완화시킬 수 있다.
이트리아, 코팅, 잔류 응력, 기공성 완충층

公开(公告)号：KR1020040100231A

公开(公告)日：2004-12-02

申请号：KR1020030032502

申请日：2003-05-22

Applicant: 코오롱데크컴퍼지트 주식회사 ,  한국산업기술평가원(관리부서:요업기술원)

Inventor： 박홍식 ,  임동원 ,  김광수 ,  김영희 ,  류도형 ,  김형래 ,  신동근 ,  김수룡 ,  김경자 ,  신현규 ,  조대현

IPC: C08G77/08

CPC classification number: B01J29/86 ,  B01J29/084 ,  B01J29/40 ,  C08G77/60

Abstract: PURPOSE: A method for preparing polycarbosilane from polydimethylsilane is provided, to allow the Si/Al ratio or Si/B ratio of zeolite used as a catalyst to be controlled and the acidity of a catalyst to be controlled, thereby allowing the molecular weight of final product to be controlled easily and improving yield compared with the method using an already-existing solid acid catalyst. CONSTITUTION: The method comprises the step of preparing polycarbosilane from polydimethylsilane by using zeolite as a catalyst at a low pressure. Preferably the zeolite has a Si/Al ratio or Si/B ratio of 1-200; its content is 0.1-10 wt%; and the zeolite is ZSM-5, ZSM-11, ZSM-12, zeolite X or zeolite Y. Preferably the reaction is carried out at a temperature of 250-450 deg.C for 3-20 hours.

Abstract translation: 目的：提供从聚二甲基硅烷制备聚碳硅烷的方法，以控制用作催化剂的沸石的Si / Al比或Si / B比和控制催化剂的酸度，从而使最终的分子量 与使用已经存在的固体酸催化剂的方法相比，容易控制的产物和产率提高。 构成：该方法包括通过在低压下使用沸石作为催化剂从聚二甲基硅烷制备聚碳硅烷的步骤。 优选地，沸石的Si / Al比或Si / B比为1-200; 其含量为0.1-10重量％ 沸石是ZSM-5，ZSM-11，ZSM-12，X沸石或沸石Y.优选的反应在250-450℃的温度下进行3-20小时。