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Patent Agency Ranking
公开(公告)号：KR100714125B1
公开(公告)日：2007-05-02
申请号：KR1020060001677
申请日：2006-01-06
Applicant: 한국전자통신연구원
IPC: H01L27/00
CPC classification number: H01L49/003
Abstract: 본 발명은 정격신호전압보다 낮은 잡음신호를 제거할 수 있는 급격한 MIT 소자를 이용한 저전압 잡음 방지회로 및 그 회로를 포함한 전기전자시스템을 제공한다. 그 잡음 방지 회로는 잡음으로부터 보호받고자 하는 전기전자시스템에 직렬 연결된 급격한 MIT(Metal-Insulator Transition) 소자를 포함한다. 본 발명은 소정 전압에서 급격한 금속-절연체 전이 특성을 갖는 급격한 MIT 소자를 전기전자시스템에 직렬로 연결함으로써, 저전압 잡음을 효과적으로 제거할 수 있다.
금속-절연체 전이, 급격한 MIT 소자, 보호회로, 노이즈 필터-
32.发明授权급격한 ＭＩＴ 소자, 그 소자를 이용한 고전압 잡음제거회로 및 그 제거회로를 포함한 전기전자시스템 失效突发MIT设备，用于去除适应同一设备的高电压噪声的电路，以及包括相同电路的电气和电子系统
公开(公告)号：KR100714115B1
公开(公告)日：2007-05-02
申请号：KR1020050124045
申请日：2005-12-15
Applicant: 한국전자통신연구원
Abstract: 전기전자시스템 특히, 고전압 개폐기 등과 같이 초고전압으로부터 보호하기 위해 초고전압 잡음을 바이패스 시키기 위한 소자 및 그 소자를 이용하여 초고전압 잡음을 바이패스 시키는 고전압 잡음 제거회로 및 그 회로를 포함한 전기전자시스템을 제공한다. 그 소자는 기판; 및 기판 상면 및 하면 각각에 형성된 제1 및 제2 급격한 MIT(Metal-Insulator Transition) 구조물;을 포함한다. 그 제거회로는 보호받고자 하는 전기전자시스템에 병렬연결되고, 적어도 2개의 급격한 MIT(Metal-Insulator Transition) 소자가 직렬연결된 급격한 MIT 소자열을 포함한다.
금속-절연체 전이, 급격한 MIT 소자, 개폐기, 고전압 잡음-
公开(公告)号：KR1020070040709A
公开(公告)日：2007-04-17
申请号：KR1020060015636
申请日：2006-02-17
Applicant: 한국전자통신연구원
CPC classification number: G01K3/005 , G01K7/22 , G08B17/06 , G08B3/1025 , G08B5/22
Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
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公开(公告)号：KR1020070014939A
公开(公告)日：2007-02-01
申请号：KR1020060018506
申请日：2006-02-25
Applicant: 한국전자통신연구원
CPC classification number: G01R31/1245 , H01L49/003
Abstract: A partial discharge measuring device and a measuring system having the same are provided to check partial discharge without external noise by bypassing current generated due to the partial discharge by rapid metal-insulator transition through an arrester unit. A partial discharge measuring device includes an arrester unit(140) conducted with partial discharge of a gas insulator executing rapid metal-insulator transition; a first electrode(150) electrically connected to the arrester unit to detect the partial discharge and have a first resistance value; and at least one second electrode(160) connected with the first electrode in parallel, wherein the second electrode has a resistance value smaller than the resistance value of the first electrode. The insulator is SF6(Sulfur Hexafluoride) gas.
Abstract translation: 提供了一种局部放电测量装置及其测量系统，以通过绕过由于通过避雷器单元的快速金属 - 绝缘体转变而产生的局部放电产生的电流来检查没有外部噪声的局部放电。 局部放电测量装置包括：执行快速金属 - 绝缘体转换的气体绝缘体的局部放电导管的避雷器单元（140）; 电连接到避雷器单元以检测局部放电并具有第一电阻值的第一电极（150） 以及与第一电极并联连接的至少一个第二电极（160），其中第二电极具有小于第一电极的电阻值的电阻值。 绝缘子是SF6（六氟化硫）气体。
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公开(公告)号：KR1020070003529A
公开(公告)日：2007-01-05
申请号：KR1020060015634
申请日：2006-02-17
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L27/10 , B82Y10/00 , G11C13/0007 , G11C13/0014 , G11C2213/32 , G11C2213/51 , H01L29/8615 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/148 , H01L49/003
Abstract: A memory device using abrupt metal-insulator transition and a method for operating the same are provided to define an on-state by using a conductive path covering the abrupt metal-insulator transition material layer. A memory device comprises a substrate(102), a metal-insulator transition material layer disposed on the substrate for undergoing abrupt metal insulator transition by energy change between electrons, and at least two electrodes contacting the metal-insulator transition material layer and melted by heat to form a conductive path on the metal-insulator transition material layer. The metal-insulator transition material layer contains at least one selected from the group consisting of an inorganic compound semiconductor or insulator material to which low-concentration holes are added, an organic semiconductor or insulator material to which low-concentration holes are added, a semiconductor material to which low-concentration holes are added, and an oxide semiconductor or insulator material to which low-concentration holes are added.
Abstract translation: 提供使用突变金属 - 绝缘体转变的存储器件及其操作方法，以通过使用覆盖突变金属 - 绝缘体转移材料层的导电路径来限定导通状态。 存储器件包括衬底（102），设置在衬底上的金属 - 绝缘体转变材料层，用于通过电子之间的能量变化进行突然的金属绝缘体转变，以及至少两个接触金属 - 绝缘体转变材料层的电极并通过热量熔化 以在金属 - 绝缘体转变材料层上形成导电路径。 金属 - 绝缘体过渡材料层含有从添加有低浓度空穴的无机化合物半导体或绝缘体材料中选择的至少一种，添加低浓度孔的有机半导体或绝缘体材料，半导体 添加低浓度孔的材料和添加有低浓度孔的氧化物半导体或绝缘体材料。
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