유기분자 소자의 제작 방법
    32.
    发明公开
    유기분자 소자의 제작 방법 失效
    制造有机分子装置的方法

    公开(公告)号:KR1020050025386A

    公开(公告)日:2005-03-14

    申请号:KR1020030062416

    申请日:2003-09-06

    Abstract: A method of manufacturing an organic molecular device is provided to improve the reproductivity of manufacturing processes by checking easily an adsorption degree of conductive organic molecules using the amount of current between an upper and a lower electrode. A lower electrode(43) is formed on a substrate(41). A sacrificial pattern(44) for enclosing the lower electrode is formed on the substrate. An upper electrode(45) is formed along an upper surface of the resultant structure. A nano gap(46) is formed between the lower and upper electrodes by removing the sacrificial pattern therefrom. Conductive organic molecules(47) are adsorbed onto the lower and upper electrodes within the nano gap.

    Abstract translation: 提供一种制造有机分子器件的方法,以通过使用上电极和下电极之间的电流量容易地检查导电有机分子的吸附度来提高制造工艺的再现性。 在基板(41)上形成下电极(43)。 在衬底上形成用于封闭下电极的牺牲图案(44)。 沿所得结构的上表面形成上电极(45)。 通过从其中去除牺牲图案,在下电极和上电极之间形成纳米间隙(46)。 导电有机分子(47)吸附在纳米间隙内的下电极和上电极上。

    알킬기를 갖는 스피로비플루오렌 화합물 및 그 제조방법
    33.
    发明授权
    알킬기를 갖는 스피로비플루오렌 화합물 및 그 제조방법 失效
    알킬기를갖는스피로비플루오렌화합물및그제조방알킬

    公开(公告)号:KR100449854B1

    公开(公告)日:2004-09-22

    申请号:KR1020010008989

    申请日:2001-02-22

    Abstract: PURPOSE: Provided are various spirobifluorene compounds with alkyl substituents at desired positions and their preparation method, thereby preparing derivatives each having different functions and excellent solubility to be used for polymer synthesis and as electronic materials. CONSTITUTION: Spirobifluorene compound is represented by the formula(1), wherein R1 and R2 are the same or different each other, and represent a C1-C20 linear or branched alkyl group or alkoxy group, or a thioalkyl group; and X1 and X2 are the same or different each other and represent hydrogen or halogen, or a hydroxyl group, or bone or boric ester, provided that X1 and X2 don't represent hydrogen simultaneously.

    Abstract translation: 目的:提供在所需位置具有烷基取代基的各种螺二芴化合物及其制备方法,由此制备各种具有不同功能和优异溶解性的用于聚合物合成的衍生物和作为电子材料。 构成:螺二芴化合物由式(1)表示,其中R 1和R 2彼此相同或不同,并且表示C 1 -C 20直链或支链烷基或烷氧基或硫代烷基; X1和X2彼此相同或不同,并且代表氢或卤素,或羟基,或骨或硼酸酯,条件是X1和X2不同时代表氢。

    4-설파닐알킬-3,5-디니트로-벤질 알콜 유도체 및 그의제조방법
    34.
    发明公开
    4-설파닐알킬-3,5-디니트로-벤질 알콜 유도체 및 그의제조방법 失效
    4-SULFANYLALKYL-3,5-DINITROBENZYL ALCOHOL衍生物及其制备方法

    公开(公告)号:KR1020040068677A

    公开(公告)日:2004-08-02

    申请号:KR1020030005174

    申请日:2003-01-27

    CPC classification number: C07C327/28 C07C323/16

    Abstract: PURPOSE: A novel 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol compound and its preparation method are provided, to obtain a compound useful as a molecular electron acceptor and applicable to a molecular electronic material. CONSTITUTION: The 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol compound is represented by the formula 1, wherein R is H, an alkyl group or an acetyl group; and n is an integer of 1-25. The method comprises the steps of reacting p-methylbenzoic acid with nitric acid to prepare p-methyl-3,5-dinitrobenzoic acid; reacting the p-methyl-3,5-dinitrobenzoic acid with an alkyl alcohol in the presence of a catalyst to prepare an alkyl p-methyl-3,5-dinitrobenzoate; reacting the alkyl p-methyl-3,5-dinitrobenzoate with an N-halosuccinimide to prepare an alkyl 4-halomethyl-3,5-dinitrobenzoate; converting the ester group of the alkyl 4-halomethyl-3,5-dinitrobenzoate into an alcohol group in the presence of a catalyst to prepare a 4-halomethyl-3,5-dinitrobenzyl alcohol; and reacting the 4-halomethyl-3,5-dinitrobenzyl alcohol with potassium thioacetate or an alkyl thiosodium to prepare a compound whose R is an alkyl or acetyl group or removing the alkyl or acetyl group to prepare a compound whose R is H.

    Abstract translation: 目的:提供一种新型的4-硫烷基烷基-3,5-二硝基苄醇化合物及其制备方法,以获得可用作分子电子受体的化合物并适用于分子电子材料。 构成:4-硫烷基烷基-3,5-二硝基苄醇化合物由式1表示,其中R是H,烷基或乙酰基; n为1-25的整数。 该方法包括使对甲基苯甲酸与硝酸反应制备对甲基-3,5-二硝基苯甲酸; 在催化剂存在下使对甲基-3,5-二硝基苯甲酸与烷基醇反应,制备对甲基-3,5-二硝基苯甲酸烷基酯; 使对 - 甲基-3,5-二硝基苯甲酸烷基酯与N-卤代琥珀酰亚胺反应制备4-卤代甲基-3,5-二硝基苯甲酸烷基酯; 在催化剂存在下将4-卤代甲基-3,5-二硝基苯甲酸烷基酯的酯基转化为醇基,制备4-卤代甲基-3,5-二硝基苯甲醇; 并使4-卤代甲基-3,5-二硝基苄醇与硫代乙酸钾或烷基硫代钠反应,制备R为烷基或乙酰基或除去烷基或乙酰基的化合物,制备其R为H的化合物。

    플라스틱 박막상의 인듐주석산화막 패턴 형성 방법과 그를 위한 회전 도포기
    35.
    发明授权
    플라스틱 박막상의 인듐주석산화막 패턴 형성 방법과 그를 위한 회전 도포기 失效
    플라스틱박막상의인듐주석산화막패턴형성방법과그를위한회전도포기

    公开(公告)号:KR100413971B1

    公开(公告)日:2004-01-07

    申请号:KR1020000080894

    申请日:2000-12-22

    Abstract: PURPOSE: A method of patterning an indium tin oxide layer on a plastic thin film and a rotary coater used for the method are provided to coat photoresist in uniform thickness and prevent undercut generated in the event of wet etching. CONSTITUTION: An ITO layer(11) is formed on a plastic substrate(10), and photoresist is coated on the ITO layer. Heat treatment is performed in order to remove a solvent contained in the coated photoresist. Ultraviolet rays are irradiated on a portion of the ITO layer, which is etched, using a patterned mask. The exposed portion of the photoresist is developed. Heat treatment is carried out to eliminate moisture and solvent left in the photoresist. The ITO layer is dipped in an ITO etchant using the patterned photoresist as a mask to wet-etch the ITO layer. The photoresist used as the mask is stripped.

    Abstract translation: 目的:提供一种在塑料薄膜上图案化铟锡氧化物层的方法和用于该方法的旋转涂布机,以均匀厚度涂布光致抗蚀剂并防止在湿法蚀刻的情况下产生底切。 构成:在塑料衬底(10)上形成ITO层(11),并在ITO层上涂覆光刻胶。 进行热处理以除去包含在涂覆的光致抗蚀剂中的溶剂。 使用图案化的掩模将紫外线照射在被蚀刻的ITO层的一部分上。 光刻胶的曝光部分被显影。 进行热处理以消除残留在光致抗蚀剂中的湿气和溶剂。 使用图案化的光致抗蚀剂作为掩模将ITO层浸入ITO蚀刻剂中以湿法蚀刻ITO层。 用作掩模的光刻胶被剥离。

    분자전자소자 제조방법
    36.
    发明公开
    분자전자소자 제조방법 失效
    制备分子电子器件的方法

    公开(公告)号:KR1020030089936A

    公开(公告)日:2003-11-28

    申请号:KR1020020027863

    申请日:2002-05-20

    Abstract: PURPOSE: A method for fabricating a molecular electronic device is provided to reduce a manufacturing cost by using a single crystal growth method and a selective etching method. CONSTITUTION: The first semiconductor layer(20), the second semiconductor layer, and the third semiconductor layer(40) are sequentially laminated on a substrate(10). A nanogap(35) is formed between the first semiconductor layer(20) and the third semiconductor layer(40) by etching a side of the second semiconductor layer. A metal layer is formed on a surface of the resultant. An upper part(50a) and a lower part(50b) of the resultant is electrically disconnected to each other by cutting vertically the substrate(10). A molecular electronic element(70) is coated on the upper part(50a) and the lower part(50b) near to the nanogap(35).

    Abstract translation: 目的:提供一种制造分子电子器件的方法,以通过使用单晶生长方法和选择性蚀刻方法来降低制造成本。 构成:第一半导体层(20),第二半导体层和第三半导体层(40)依次层叠在基板(10)上。 通过蚀刻第二半导体层的一侧,在第一半导体层(20)和第三半导体层(40)之间形成纳米隙(35)。 在所得物的表面上形成金属层。 通过垂直地切割基板(10),所得结果的上部(50a)和下部(50b)彼此电断开。 分子电子元件(70)涂覆在靠近纳米孔(35)的上部(50a)和下部(50b)上。

    유기 전기발광 고분자 화합물 및 이를 포함한 유기전기발광 소자
    38.
    发明授权
    유기 전기발광 고분자 화합물 및 이를 포함한 유기전기발광 소자 失效
    유기전기발광고분자화합물및이를포함한유기전기발광소자

    公开(公告)号:KR100388496B1

    公开(公告)日:2003-06-25

    申请号:KR1020010012585

    申请日:2001-03-12

    Abstract: PURPOSE: Provided are an organic, electroluminescent polymer compound which has high luminescence efficiency and excellent adhesion to insulation layer or metal electrode, and an organic, electroluminescent device comprising the same. CONSTITUTION: The organic, electroluminescent polymer compound has a structure represented by formula 1. In the formula 1, Ar is an aryl group having polar side chain, R3 and R4, which are same or different, represent a linear or branched alkyl group having C1-C20, each of x and y represents a ratio of each monomer and 0.01

    Abstract translation: 目的:提供具有高发光效率和对绝缘层或金属电极的优异粘附性的有机电致发光聚合物化合物以及包含其的有机电致发光器件。 构成:有机电致发光聚合物化合物具有由式1表示的结构。在式1中,Ar为具有极性侧链的芳基,R 3和R 4相同或不同,表示具有C 1的直链或支链烷基 -C20,x和y中的每一个表示每种单体的比例并且0.01

    고안정성 고분자 구동기의 제조방법 및 이로부터 얻은고분자 구동기
    39.
    发明公开
    고안정성 고분자 구동기의 제조방법 및 이로부터 얻은고분자 구동기 失效
    制备具有高稳定性的聚合物致动器的方法和由该方法制备的聚合物致动器

    公开(公告)号:KR1020080041975A

    公开(公告)日:2008-05-14

    申请号:KR1020070053741

    申请日:2007-06-01

    Abstract: A method for producing a highly stable polymer actuator is provided to allow the use of a polymer actuator at a low temperature and even after treatment at an extremely high temperature. A method for producing a highly stable polymer actuator comprises: a step(S11) of preparing an ionic polymer/metal composite comprising metal electrodes plated on both surfaces of a conductive polymer membrane; a step(S12) of removing water from the conductive polymer membrane of the ionic polymer/metal composite; and a step(S13) of swelling the ionic polymer/metal composite in a polar solvent having a higher boiling point and a lower freezing point than water. The polar solvent includes propylene carbonate.

    Abstract translation: 提供了一种制造高度稳定的聚合物致动器的方法,以允许在低温下甚至在极高温度下处理之后使用聚合物致动器。 制造高度稳定的聚合物致动器的方法包括:制备离子聚合物/金属复合物的步骤(S11),其包含镀在导电聚合物膜的两个表面上的金属电极; 从离子型聚合物/金属复合体的导电性聚合物膜除去水的工序(S12) 和在具有比水高的沸点和低冰点的极性溶剂中使离子聚合物/金属复合物膨胀的步骤(S13)。 极性溶剂包括碳酸亚丙酯。

    나노임프린팅 리소그래피를 이용한 나노와이어 소자제조방법
    40.
    发明授权
    나노임프린팅 리소그래피를 이용한 나노와이어 소자제조방법 失效
    使用纳米印刷法进行纳米线器件的制作与制作方法

    公开(公告)号:KR100820182B1

    公开(公告)日:2008-04-08

    申请号:KR1020070054562

    申请日:2007-06-04

    Abstract: A method for fabricating a nano wire device using nano imprinting lithography is provided to reduce an interval of fabrication time of a nano wire device by forming a pattern only once. An insulation layer(20) is formed on a substrate(10). A nano wire solution including a nano wire(60) is deposited on the insulation layer wherein a plurality of nano wires and an organic solvent can be mixed in the nano wire solution. Photoresist is formed on the resultant structure. The photoresist is stamped by using a nano imprinting stamp having a pattern of a nano size. A metal layer for a metal electrode is deposited on the stamped photoresist. The photoresist remaining on the insulation layer is removed by a lift-off process.

    Abstract translation: 提供使用纳米压印光刻制造纳米线器件的方法,通过仅形成一次图案来减少纳米线器件的制造时间的间隔。 绝缘层(20)形成在基板(10)上。 包括纳米线(60)的纳米线溶液沉积在绝缘层上,其中可以在纳米线溶液中混合多根纳米线和有机溶剂。 在所得结构上形成光刻胶。 通过使用具有纳米尺寸图案的纳米压印印模冲压光致抗蚀剂。 用于金属电极的金属层沉积在冲压的光致抗蚀剂上。 通过剥离工艺除去残留在绝缘层上的光致抗蚀剂。

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