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31.发明公开수성 조성물, 이를 이용한 전도성 박막 제조 방법과 이로부터 제조된 전도성 박막, 및 이를 포함하는 전자 소자 审中-实审水性组合物，使用其制造导电薄膜的方法和生产的导电薄膜以及包括其的电子器件
公开(公告)号：KR1020160024640A
公开(公告)日：2016-03-07
申请号：KR1020140111706
申请日：2014-08-26
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C09D5/24 , B32B23/00 , B32B27/00 , C08K3/08 , C08K9/04 , C08K2003/0806 , C08K2003/0812 , C08K2003/0831 , C08K2003/0843 , C08K2003/085 , C08K2201/001 , C08K2201/003 , C08K2201/011 , C08L1/00 , C08L29/00 , C08L39/00 , H01B1/02 , H01L31/0224 , H01L31/022466 , H01L31/022491
Abstract: 표면을둘러싸는유기화합물을가지는도전성금속나노입자; 도전성금속나노와이어; 및물 및선택에따라알코올을포함하는용매를포함하는수성조성물, 이로부터제조된도전성박막및 이를포함하는전자소자가개시된다.
Abstract translation: 公开了一种水性组合物，其包含具有围绕表面的有机化合物的导电金属纳米颗粒，导电金属纳米线，以及如果选择的包括水和醇的溶剂; 由其制造的导电薄膜; 以及包括该电子设备的电子设备。 一个实施方案涉及能够制造具有高导电性和优异透明性的柔性导电薄膜的水性组合物。
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公开(公告)号：KR1020150136431A
公开(公告)日：2015-12-07
申请号：KR1020140064010
申请日：2014-05-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C23C14/28 , C01B19/007 , C23C14/024 , C23C14/0623 , H01B1/06
Abstract: HfTe를포함하는박막의원료를얻는단계; HfTe를포함하는박막의형성을위한표면을가진결정성재료를얻는단계; 및상기원료로부터상기결정성재료의상기표면상에 HfTe를포함하는박막을형성하는단계를포함한 HfTe를포함하는박막의제조방법이제공되며, 이때, 상기결정성재료는구성하는원자들의규칙적배열을포함하는결정구조를가지고, 상기규칙적배열내에규칙적으로반복하는임의의다각형또는다면체가그려질수 있으며, HfTe의격자상수에대한, 상기다각형또는다면체의한 변의길이와상기격자상수간의최소차이의비율이 5% 이하이다.
Abstract translation: 本发明提供一种制造含有Hf_3Te_2的薄膜的方法，包括：获得含有Hf_3Te_2的薄膜的原料的步骤; 获得具有表面以形成包含Hf_3Te_2的薄膜的结晶材料的步骤; 以及从原料在结晶材料的表面上形成含有Hf_3Te_2的薄膜的工序。 在这段时间内，结晶材料具有包括组成原子的规则排列的晶体结构，在正被排列的规则排列中规则地重复的随机多边形或多面体以及多边形的一侧的长度之间的最小差的比率 多面体和相对于Hf_3Te_2的晶格常数的晶格常数为5％以下。
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公开(公告)号：KR1020140122134A
公开(公告)日：2014-10-17
申请号：KR1020130038845
申请日：2013-04-09
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L21/18 , H01L29/1606 , H01L29/778 , H01L29/78684 , C01B32/182 , B32B9/007 , H01L41/00
Abstract: 본 개시의 일 측면에 따라, 매우 우수한 전하 이동도 뿐만 아니라 밴드갭을 갖는 그래핀 적층체를 제공한다. 본 개시의 제1 측면에 따른 그래핀 적층체의 일 구현예는, 음전하 대전면 및 양전하 대전면을 갖는 제1 압전재료 층; 상기 제1 압전재료 층의 아래에 위치하는 제1 그래핀 층으로서, 상기 제1 압전재료 층의 양전하 대전면과 접하고 있는 제1 그래핀 층; 상기 제1 그래핀 층의 아래에 위치하는 제2 그래핀 층; 및 상기 제2 그래핀 층의 아래에 위치하며 음전하 대전면 및 양전하 대전면을 갖는 제2 압전재료 층으로서, 상기 제2 압전재료 층의 음전하 대전면이 상기 제2 그래핀 층과 접하고 있는, 제2 압전재료 층;을 포함한다.
Abstract translation: 本发明的一个方面提供了具有优异的电荷迁移率和带隙的石墨烯层压体。 根据本发明的方面的石墨烯层压体的一个实施方案包括具有带负电荷的表面和带正电的表面的第一压电材料层; 第一石墨烯层，其被放置在所述压电材料层的下方并与所述第一压电材料层的带正电的表面接触; 放置在第一石墨烯层之下的第二石墨烯层; 以及第二压电材料层，其设置在所述第二石墨烯层的下方并具有带负电的表面和带正电的表面，其中所述第二压电材料层的带负电的表面与所述第二石墨烯层接触。
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公开(公告)号：KR1020140089002A
公开(公告)日：2014-07-14
申请号：KR1020120158529
申请日：2012-12-31
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L35/26 , B82Y99/00 , H01L35/02 , H01L35/12 , H01L35/14 , H01L35/16 , H01L35/18 , H01L35/24 , Y10S977/742 , Y10S977/948
Abstract: Disclosed are a thermoelectric material and a thermoelectric device including the same. The disclosed thermoelectric material includes at least two different material layers and, for example, a stack structure on which a first material layer and a second material layer are alternatively stacked. The first material layer includes a carbon nanomaterial. The second material layer includes a thermoelectric inorganic material. The first material layer includes the thermoelectric inorganic material with the carbon nanomaterial. The carbon nanomaterial, for example, includes graphene. At least one of the first and second material layers is made of a plurality of nanoparticles. The thermoelectric material further includes at least one conductor which is extended in the stack direction of the stack structure.
Abstract translation: 公开了一种热电材料和包括该热电材料的热电装置。 所公开的热电材料包括至少两个不同的材料层，以及例如堆叠结构，第一材料层和第二材料层交替堆叠在该堆叠结构上。 第一材料层包括碳纳米材料。 第二材料层包括热电无机材料。 第一材料层包括具有碳纳米材料的热电无机材料。 碳纳米材料例如包括石墨烯。 第一和第二材料层中的至少一个由多个纳米颗粒制成。 热电材料还包括至少一个沿堆叠结构的堆叠方向延伸的导体。
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公开(公告)号：KR1020140085113A
公开(公告)日：2014-07-07
申请号：KR1020120155320
申请日：2012-12-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/1606 , C01B32/182
Abstract: Disclosed are a method of transferring graphene and a method of manufacturing a device using the same. The method of transferring graphene includes the steps of: forming a graphene layer on a substrate containing a base metal catalyst (for example, a semiconductor catalyst); forming a thin film on the graphene layer; and separating a lamination structure of the graphene layer and the thin film from the substrate. The base metal catalyst (for example, a semiconductor catalyst) may contain at least one among Ge and SiGe. The thin film may include an inorganic thin film and may have a single layered structure or a multi-layered structure. The step of separating a lamination structure from a substrate may be performed by a physical detachment process. After the step of separating the lamination structure from the substrate, a step of forming an organic film on the substrate may be further performed.
Abstract translation: 公开了转移石墨烯的方法和使用其制造器件的方法。 转移石墨烯的方法包括以下步骤：在含有贱金属催化剂（例如半导体催化剂）的基材上形成石墨烯层; 在石墨烯层上形成薄膜; 以及从所述基板分离所述石墨烯层和所述薄膜的层叠结构。 贱金属催化剂（例如，半导体催化剂）可以含有Ge和SiGe中的至少一种。 薄膜可以包括无机薄膜，并且可以具有单层结构或多层结构。 分离层压结构与基板的步骤可以通过物理分离工艺进行。 在将层叠结构与基板分离的步骤之后，可以进一步进行在基板上形成有机膜的工序。
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Patent Agency Ranking36.发明公开소수성 유기물을 함유하는 도핑 그래핀 구조체, 그의 제조방법 및 이를 구비하는 투명전극, 표시소자와 태양전지 审中-实审包含疏水性有机物的疏水性石墨组合物，其制备方法和透明电极，显示装置和包含电极的太阳能电池
公开(公告)号：KR1020140060376A
公开(公告)日：2014-05-20
申请号：KR1020120117905
申请日：2012-10-23
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L29/1606 , H01G9/20 , H01G9/2022 , H01G9/2077 , H01L21/04 , H01L21/0405 , H01L29/16 , H01L51/0045 , H01L51/442 , H01L51/5203 , Y02E10/50 , Y02E10/542 , Y02E10/549 , C01B32/194 , B41M3/12 , B82B1/008
Abstract: The moisture and temperature stability in the doped graphene is improved by forming a hydrophobic organic layer on the surface of the doped graphene on which dopants are doped. The degradation of the doped graphene can be prevented by the improved stability; thus, a transparent electrode comprising the doped graphene including a hydrophobic organic layer can be useful in a solar cell and a display device.
Abstract translation: 通过在其上掺杂有掺杂剂的掺杂石墨烯的表面上形成疏水性有机层来改善掺杂石墨烯中的水分和温度稳定性。 通过提高稳定性可以防止掺杂石墨烯的降解; 因此，包括疏水性有机层的掺杂石墨烯的透明电极可用于太阳能电池和显示装置。
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公开(公告)号：KR1020130078454A
公开(公告)日：2013-07-10
申请号：KR1020110147414
申请日：2011-12-30
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L35/22 , C01B32/184 , H01L35/16 , H01L35/32 , H01L35/34 , Y02P20/133
Abstract: PURPOSE: A heterogeneous laminate including graphene, a thermoelectric material, a thermoelectric module, and a thermoelectric apparatus including the same are provided to increase a seebeck effect by using the temperature difference of a current. CONSTITUTION: A composite lamination includes graphene (1). The composite lamination includes a thermoelectric inorganic material (2). The graphene has two to a hundred layers. The graphene has a lamination structure. The graphene is formed by a physical or a chemical process.
Abstract translation: 目的：提供包括石墨烯，热电材料，热电模块和包括其的热电装置的异质层压板，以通过使用电流的温度差来增加塞贝克效应。 构成：复合层压包括石墨烯（1）。 复合层压包括热电无机材料（2）。 石墨烯有两到一百层。 石墨烯具有层压结构。 石墨烯是通过物理或化学过程形成的。
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公开(公告)号：KR1020110133452A
公开(公告)日：2011-12-12
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: PURPOSE: A method for manufacturing a graphene nano-ribbon and the graphene nano-ribbon manufactured by the same are provided to cost effectively manufacture the graphene nano-ribbon without a high vacuum machine or an expensive machine. CONSTITUTION: A method for manufacturing a graphene nano-ribbon includes the following: A sheet-shaped graphene is formed on at least one side of a substrate. A plasma mask with nano-patterns is formed on the graphene. The nano-patterns are formed on the graphene by implementing a plasma treating process with respect to the stacked body with the plasma mask. The plasma mask forming process includes an amorphous carbon stacking process and a nano-pattern forming process with respect to amorphous carbon. After the nano-patterns are formed on the graphene, the plasma mask is eliminated.
Abstract translation: 目的：提供一种制造石墨烯纳米带的方法和由其制造的石墨烯纳米带，以便在没有高真空机或昂贵的机器的情况下成本有效地制造石墨烯纳米带。 构成：用于制造石墨烯纳米带的方法包括以下：片状石墨烯形成在基板的至少一侧上。 在石墨烯上形成具有纳米图案的等离子体掩模。 通过使用等离子体掩模实现相对于层叠体的等离子体处理工艺，在石墨烯上形成纳米图案。 等离子体掩模形成工艺包括无定形碳堆叠工艺和相对于无定形碳的纳米图案形成工艺。 在石墨烯上形成纳米图案之后，等离子体掩模被消除。
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公开(公告)号：KR101014007B1
公开(公告)日：2011-02-14
申请号：KR1020090107171
申请日：2009-11-06
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: B82B1/00 , B82B3/00 , B82Y15/00 , H01L29/775
Abstract: 환원제를 이용하여 전자가 주입된 탄소 나노튜브(CNT)를 제조하는 방법과 이러한 방법을 통하여 제조된 탄소 나노튜브 및 그를 포함하는 전기 소자를 개시한다. 환원제를 이용하여 전자가 주입된 탄소 나노튜브는 환원제 처리 조건을 변화시킴으로써 탄소 나노튜브의 도핑 정도와 띠 간격 등의 전자적 특성을 광범위하고 용이하게 조절할 수 있는 특징이 있다.
탈도핑, 탄소 나노튜브, 환원제-
公开(公告)号：KR1020100061088A
公开(公告)日：2010-06-07
申请号：KR1020080119974
申请日：2008-11-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C07D401/04 , C07D213/16
CPC classification number: C07D213/22 , B82Y10/00 , H01B1/24 , H01L51/0049 , Y10S977/742 , Y10S977/745 , Y10S977/746 , Y10S977/788 , Y10S977/795
Abstract: PURPOSE: A carbon nano tube(CNT) n- doping material and a CNT n- doping method using thereof are provided to prevent a dedoping of a CNT during an n- doping process among air and moisture, and to maintain a stable doping state. CONSTITUTION: A CNT n- doping material includes more than two pyridinium derivatives inside the molecular structure. The material also contains a compound in the restored state. The compound is viologen selected from the group consisting of 1,1'dibenzyl-4,4'-bipyridinium dichloride, methyl viologen dichloride hydrate, ethyl viologen diperchlorate, 1,11dioctadecyl-4,4'-bipyridinium dibromide, or di-octyl bis(4-pyridyl)biphenyl viologen. A CNT n- doping method comprises a step of doping a CNT with the CNT n- doping material, and a step of removing a solvent from the CNT n- doping material.
Abstract translation: 目的：提供碳纳米管（CNT）n-掺杂材料和使用其的CNT n-掺杂方法，以防止在空气和水分中的n-掺杂过程中对CNT的去掺杂，并保持稳定的掺杂状态。 构成：CNT n-掺杂材料在分子结构内包含两个以上的吡啶鎓衍生物。 该材料还含有处于恢复状态的化合物。 该化合物是选自二氯化1,1'-二苄基-4,4'-联吡啶鎓二氯化物，甲基紫精二氯化物水合物，乙基紫精二水合物，1,11-十八烷基-4,4'-联吡啶鎓二溴化物或二 - 辛基双 （4-吡啶基）联苯紫精。 CNTn掺杂方法包括用CNT掺杂材料掺杂CNT的步骤，以及从CNT正掺杂材料除去溶剂的步骤。
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