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    탄소나노튜브 소자 어레이의 제조방법
    3.
    发明公开
    탄소나노튜브 소자 어레이의 제조방법 有权
    制备碳纳米管装置阵列的方法

    公开(公告)号：KR1020100123144A

    公开(公告)日：2010-11-24

    申请号：KR1020090042192

    申请日：2009-05-14

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 김언정 ,  이은홍 ,  이영희 ,  이일하

    IPC: H01L21/027 ,  B82B3/00

    CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/16 ,  C01B2202/08 ,  B82B3/00 ,  H01L21/0332

    Abstract: PURPOSE: A manufacturing method of a carbon nano tube element is provided to form carbon nanotubes in a desired location by using a photolithography process. CONSTITUTION: An oxide layer(120) is formed on a substrate(110). A plurality of catalyst patterns are formed on the oxide layer. The catalyst patterns are formed by a photolithography process. A plurality of firsts and second electrodes(151,152) are formed by the photolithography process.

    Abstract translation: 目的：提供碳纳米管元件的制造方法，以通过使用光刻工艺在所需位置形成碳纳米管。 构成：在衬底（110）上形成氧化物层（120）。 在氧化物层上形成多个催化剂图案。 催化剂图案通过光刻工艺形成。 通过光刻工艺形成多个第一和第二电极（151,152）。

    앰비폴라 특성을 가진 탄소나노튜브 트랜지스터를 구비한전환가능한 논리회로
    4.
    发明公开
    앰비폴라 특성을 가진 탄소나노튜브 트랜지스터를 구비한전환가능한 논리회로 有权
    包含具有偶极特性的碳纳米管晶体管的可转换逻辑电路

    公开(公告)号：KR1020090113035A

    公开(公告)日：2009-10-29

    申请号：KR1020080038897

    申请日：2008-04-25

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 김언정 ,  이은홍 ,  이영희 ,  유우종

    IPC: H01L29/80 ,  B82Y10/00

    CPC classification number: H03K19/173 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0545

    Abstract: PURPOSE: A convertible logic circuit comprising a carbon nano-tube transistor having an ambipolar characteristic is provided to allow a nano-tube transistor to be converted into an n type transistor and a p type transistor by using ambipolar characteristic of carbon nano-tube transistor. CONSTITUTION: In a convertible logic circuit comprising a carbon nano-tube transistor having an ambipolar characteristic, a field effect transistor is composed of a carbon nanotube(30) between a source and a drain and a gate insulating layer(40), a gate electrode(50). A logic circuit includes a first transistor and a second transistor and a input power is connected with the gate of the first transistor and the second transistor. A first electrode of the first transistor is connected with power voltage and the second electrode of the second transistor is ground.

    Abstract translation: 目的：提供一种包含具有双极特性的碳纳米管晶体管的可转换逻辑电路，以通过使用碳纳米管晶体管的双极特性，使纳米管晶体管转换为n型晶体管和p型晶体管。 构成：在具有双极特性的碳纳米管晶体管的可转换逻辑电路中，场效应晶体管由源极和漏极之间的碳纳米管（30）和栅极绝缘层（40）构成，栅电极 （50）。 逻辑电路包括第一晶体管和第二晶体管，并且输入功率与第一晶体管和第二晶体管的栅极连接。 第一晶体管的第一电极与电源电压连接，第二晶体管的第二电极被研磨。

    탄소나노튜브 엔 도핑 물질 및 이를 이용한 엔 도핑 방법
    9.
    发明公开
    탄소나노튜브 엔 도핑 물질 및 이를 이용한 엔 도핑 방법 有权
    CNT N掺杂材料和使用其的CNT N掺杂方法

    公开(公告)号：KR1020100061088A

    公开(公告)日：2010-06-07

    申请号：KR1020080119974

    申请日：2008-11-28

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 신현진 ,  이영희 ,  최재영 ,  윤선미 ,  김수민 ,  김언정

    IPC: C07D401/04 ,  C07D213/16

    CPC classification number: C07D213/22 ,  B82Y10/00 ,  H01B1/24 ,  H01L51/0049 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/746 ,  Y10S977/788 ,  Y10S977/795

    Abstract: PURPOSE: A carbon nano tube(CNT) n- doping material and a CNT n- doping method using thereof are provided to prevent a dedoping of a CNT during an n- doping process among air and moisture, and to maintain a stable doping state. CONSTITUTION: A CNT n- doping material includes more than two pyridinium derivatives inside the molecular structure. The material also contains a compound in the restored state. The compound is viologen selected from the group consisting of 1,1'dibenzyl-4,4'-bipyridinium dichloride, methyl viologen dichloride hydrate, ethyl viologen diperchlorate, 1,11dioctadecyl-4,4'-bipyridinium dibromide, or di-octyl bis(4-pyridyl)biphenyl viologen. A CNT n- doping method comprises a step of doping a CNT with the CNT n- doping material, and a step of removing a solvent from the CNT n- doping material.

    Abstract translation: 目的：提供碳纳米管（CNT）n-掺杂材料和使用其的CNT n-掺杂方法，以防止在空气和水分中的n-掺杂过程中对CNT的去掺杂，并保持稳定的掺杂状态。 构成：CNT n-掺杂材料在分子结构内包含两个以上的吡啶鎓衍生物。 该材料还含有处于恢复状态的化合物。 该化合物是选自二氯化1,1'-二苄基-4,4'-联吡啶鎓二氯化物，甲基紫精二氯化物水合物，乙基紫精二水合物，1,11-十八烷基-4,4'-联吡啶鎓二溴化物或二 - 辛基双 （4-吡啶基）联苯紫精。 CNTn掺杂方法包括用CNT掺杂材料掺杂CNT的步骤，以及从CNT正掺杂材料除去溶剂的步骤。

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