PROCEDE DE FABRICATION D'UN MODULE ELECTRONIQUE COMPATIBLE HAUTES FREQUENCES

    公开(公告)号:EP3905325A1

    公开(公告)日:2021-11-03

    申请号:EP21170597.5

    申请日:2021-04-27

    Applicant: 3D Plus

    Inventor: VAL, Christian

    Abstract: L'invention se situe dans le domaine de la fabrication de modules électroniques 3D, compatible des composants fonctionnant au-delà de 1 GHz. L'invention concerne un module électronique 3D présentant une interconnexion entre un conducteur horizontal (31, 32 ; 33, 34) et un conducteur vertical (30) auquel il est relié présente dans un plan vertical une courbure non nulle. Elle concerne aussi le procédé de fabrication associé.

    PROCEDE D'INTERCONNEXION CHIP ON CHIP MINIATURISEE D'UN MODULE ELECTRONIQUE 3D

    公开(公告)号:EP3417481A1

    公开(公告)日:2018-12-26

    申请号:EP17704275.1

    申请日:2017-02-14

    Applicant: 3D Plus

    Inventor: VAL, Christian

    Abstract: The invention relates to a 3D electronic module comprising, along a so-called vertical direction, a stack (4) of electronic slices (16), each slice comprising at least one chip (1) furnished with interconnection pads (10), this stack being assembled to an interconnection circuit (2) of the module furnished with connection balls, the pads (10) of each chip being connected by electrical wiring leads (15) to vertical buses (41) that are in turn electrically linked to the module interconnection circuit (2), a wiring lead and the vertical bus to which it is linked forming an electrical conductor between a pad of a chip and the interconnection circuit, characterized in that each electrical wiring lead (15) is linked to its vertical bus (41) while forming an oblique angle (α2) in a vertical plane and in that the length of the wiring lead between a pad of a chip of one slice and the corresponding vertical bus is different from the length of the wiring lead between the same pad of a chip of another slice and the corresponding vertical bus, obtained by a non-rectilinear wiring of the wiring lead so as to compensate for the difference in vertical length of the vertical bus from slice to slice, in such a way that the electrical conductor between the pad of a chip of a slice and the interconnection circuit, and the electrical conductor between the same pad of a chip of the other slice and the interconnection circuit, have the same length.

    PROCEDE DE POSITIONNEMENT DES PUCES LORS DE LA FABRICATION D'UNE PLAQUE RECONSTITUEE
    39.
    发明公开
    PROCEDE DE POSITIONNEMENT DES PUCES LORS DE LA FABRICATION D'UNE PLAQUE RECONSTITUEE 有权
    法定位芯片的晶片REKONSTRITUERTEN在生产过程中

    公开(公告)号:EP2441088A1

    公开(公告)日:2012-04-18

    申请号:EP10725161.3

    申请日:2010-06-14

    Applicant: 3D Plus

    Inventor: VAL, Christian

    Abstract: The invention relates to a method for manufacturing a reconstituted wafer (100) which comprises chips (1) with bonding pads (10), said method including the following steps of manufacturing a first chip wafer (1). The method also includes the following steps: producing on said wafer a stack of at least one layer for redistributing the pads (10) of the chips on conductive tracks (12) intended for interconnecting chips, said stack being referred to as the main RDL layer (14); cutting said wafer in order to obtain individual chips (1) each with its own RDL layer (14); adding individual chips with RDL layers (14) to a substrate (20) that is rigid enough to remain flat during subsequent steps, and provided with a layer of adhesive (21), with the RDL layer (14) on the layer of adhesive (21); depositing a resin (30) in order to encapsulate the chips (1); polymerising the resin; removing the rigid substrate (20); depositing a single redistribution layer referred to as mini RDL (24) to connect the conductive tracks of the main RDL layer (14) with interconnecting contacts, via openings (22) made in the layer of adhesive (21), the wafer comprising the polymerised resin, the chips with the RDL layer thereof and the mini RDL forming the reconstituted wafer (100).

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