公开(公告)号：US20230162971A1

公开(公告)日：2023-05-25

申请号：US17990776

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02104 ,  C23C16/401 ,  C23C16/45536

Abstract: Methods for depositing SiOC and SiOCN films are disclosed. Exemplary methods utilize precursors containing iodine and alkoxide, and can be used to form low-k spacers using O-free PEALD.

公开(公告)号：US11610775B2

公开(公告)日：2023-03-21

申请号：US16318094

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R. A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/762 ,  C23C16/04 ,  C23C16/40

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20220076996A1

公开(公告)日：2022-03-10

申请号：US17467590

申请日：2021-09-07

Applicant: ASM IP holding B.V.

Inventor： Timothee Blanquart ,  Viljami Pore ,  René Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate. The substrate comprises plurality of recesses. The recesses are at least partially filled with a gap filling fluid. The gap filling fluid comprises boron, nitrogen, and hydrogen.

公开(公告)号：US11107676B2

公开(公告)日：2021-08-31

申请号：US16827506

申请日：2020-03-23

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20200126788A1

公开(公告)日：2020-04-23

申请号：US16720863

申请日：2019-12-19

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455

Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

公开(公告)号：US10515794B2

公开(公告)日：2019-12-24

申请号：US16254417

申请日：2019-01-22

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/311 ,  C23C16/30 ,  H01L21/02 ,  C23C16/455

Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

公开(公告)号：US20190341245A1

公开(公告)日：2019-11-07

申请号：US16399328

申请日：2019-04-30

Applicant: ASM IP HOLDING B.V.

Inventor： Eva Tois ,  Viljami Pore

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/40 ,  C23C16/455

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

公开(公告)号：US20190177843A1

公开(公告)日：2019-06-13

申请号：US16269456

申请日：2019-02-06

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L45/00 ,  C23C16/30 ,  H01L21/02 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US10177025B2

公开(公告)日：2019-01-08

申请号：US15222749

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore

IPC: C23C16/455 ,  H01L21/762 ,  C23C16/50 ,  H01L21/02 ,  C23C16/04

Abstract: A method and apparatus for filling one or more gaps created during manufacturing of a feature on a substrate by: providing a bottom area of a surface of the one or more gaps with a first reactant; providing a second reactant to the substrate; and, allowing the first reactant to initiate reaction of the second reactant in the bottom area of the surface in a stoichiometric ratio of one molecule of the first reactant to multiple molecules of the second reactants leaving a top area of the surface of the one or more gaps which was not provided with the first reactant initially substantially empty.

公开(公告)号：US20180151344A1

公开(公告)日：2018-05-31

申请号：US15703241

申请日：2017-09-13

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/34 ,  C23C16/455

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).