公开(公告)号：US20230272527A1

公开(公告)日：2023-08-31

申请号：US18142734

申请日：2023-05-03

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45536 ,  C23C16/342

Abstract: Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the boron precursor comprises less than or equal to two halide atoms per boron atom; and contacting the substrate with a reactive species generated from a gas comprising a nitrogen precursor.

公开(公告)号：US20230143580A1

公开(公告)日：2023-05-11

申请号：US18092219

申请日：2022-12-31

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Atsuki Fukazawa

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02211 ,  H01L21/02164

Abstract: Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US11637011B2

公开(公告)日：2023-04-25

申请号：US17068495

申请日：2020-10-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Pei-Chia Chen

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/311 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

公开(公告)号：US20210151348A1

公开(公告)日：2021-05-20

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23C16/04

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US20210104399A1

公开(公告)日：2021-04-08

申请号：US17037481

申请日：2020-09-29

Applicant: ASM IP Holding B.V.

Inventor： Aurélie Kuroda ,  Atsuki Fukazawa

IPC: H01L21/02

Abstract: Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process are provided. The methods may include: forming a topographically selective silicon oxide film by a plasma enhanced atomic layer deposition (PEALD) process or a cyclical plasma-enhanced chemical vapor deposition (cyclical PECVD) process. The methods may also include: forming a silicon oxide film either selectivity over the horizontal surfaces of a non-planar substrate or selectively over the vertical surfaces of a non-planar substrate.

公开(公告)号：US10755922B2

公开(公告)日：2020-08-25

申请号：US16427288

申请日：2019-05-30

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US10720322B2

公开(公告)日：2020-07-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US10262865B2

公开(公告)日：2019-04-16

申请号：US15488318

申请日：2017-04-14

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Toshihisa Nozawa

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  C23C16/44 ,  C23C16/06 ,  C23C16/34 ,  H01J37/32

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

公开(公告)号：US20180366314A1

公开(公告)日：2018-12-20

申请号：US15902300

申请日：2018-02-22

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/8234

CPC classification number: H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/823431

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US20180119283A1

公开(公告)日：2018-05-03

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/32 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/32 ,  C23C16/325 ,  C23C16/34 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/509 ,  C23C16/52

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.