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31.发明申请公开(公告)号：US20180322224A1
公开(公告)日：2018-11-08
申请号：US16036690
申请日：2018-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
CPC classification number: G06F17/50 , G03F1/14 , G03F1/44 , G03F1/68 , G03F7/70433 , G03F7/705 , G06F17/10 , G06F17/5009
Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
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32.发明授权公开(公告)号：US10025885B2
公开(公告)日：2018-07-17
申请号：US14589738
申请日：2015-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
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公开(公告)号：US09619603B2
公开(公告)日：2017-04-11
申请号：US14543498
申请日：2014-11-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70258 , G03F7/70441 , G03F7/705 , G06F17/5009 , G06F2217/06 , G06F2217/08 , G06F2217/10 , G06F2217/12
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
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公开(公告)号：US20160357900A1
公开(公告)日：2016-12-08
申请号：US15174732
申请日：2016-06-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng LIU , Yu Cao , Luoqi Chen , Jun Ye
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009 , G06F17/5068
Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 一种三维掩模模型，其提供具有亚波长特征的光刻掩模的三维效果比薄膜模型更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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35.发明授权Pattern-independent and hybrid matching/tuning including light manipulation by projection optics 有权图案独立和混合匹配/调谐，包括投影光学的光线操纵公开(公告)号：US09378309B2
公开(公告)日：2016-06-28
申请号：US14294745
申请日：2014-06-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
CPC classification number: G06F17/50 , G02B19/0014 , G02B19/0028 , G02B19/0095 , G03F7/705
Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
Abstract translation: 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。
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Patent Agency Ranking
公开(公告)号：US20150356234A1
公开(公告)日：2015-12-10
申请号：US14822661
申请日：2015-08-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi CHEN , Jun Ye , Yu Cao
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70083 , G03F7/70125 , G03F7/70441 , G03F7/705 , G06F17/5068
Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
Abstract translation: 本公开涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本公开通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其它方面，本公开允许同时优化源和掩码，从而显着加速整体收敛。 根据另外的方面，本公开允许自由形式优化，而不需要常规优化技术所需的约束。
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37.发明申请INTEGRATION OF LITHOGRAPHY APPARATUS AND MASK OPTIMIZATION PROCESS WITH MULTIPLE PATTERNING PROCESS 有权具有多种绘图过程的平面设备和掩模优化过程的集成公开(公告)号：US20140365983A1
公开(公告)日：2014-12-11
申请号：US14468635
申请日：2014-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Luoqi CHEN , Jun Ye , Hong Chen
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/70 , G03F7/70433 , G03F7/70466 , G03F7/705 , G03F7/70508 , G03F7/707
Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.
Abstract translation: 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 公开了一种通过光刻处理将待成像的图案图案分割成多个子图案的方法，其中该方法包括分割步骤，其被配置为意识到在以下过程中的至少一个之间的共优化的要求： 用于光刻工艺的光刻设备的子图案和光学设置。 包括基于衍射特征分析的智能图案选择的设备特征优化技术可以被集成到多个图案化工艺流程中。
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公开(公告)号：US08893067B2
公开(公告)日：2014-11-18
申请号：US13971381
申请日：2013-08-20
Applicant: ASML Netherlands B.V.
Inventor： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
CPC classification number: G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Abstract translation: 在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。
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公开(公告)号：US08832610B2
公开(公告)日：2014-09-09
申请号：US13854872
申请日：2013-04-01
Applicant: ASML Netherlands B.V.
Inventor： Jun Ye , Jiangwei Li , Stefan Hunsche
Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
Abstract translation: 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局，使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型，以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差，其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值，并在应用进一步的光学邻近校正之前应用于设计布局。
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公开(公告)号：US20140195993A1
公开(公告)日：2014-07-10
申请号：US14081386
申请日：2013-11-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Peng LIU , Yu Cao , Luoqi Chen , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。
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