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    METHOD OF PERFORMING MODEL-BASED SCANNER TUNING
    31.
    发明申请
    METHOD OF PERFORMING MODEL-BASED SCANNER TUNING 有权
    执行基于模型的扫描仪调谐的方法

    公开(公告)号：US20160033872A1

    公开(公告)日：2016-02-04

    申请号：US14880018

    申请日：2015-10-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun YE ,  Yu Cao

    IPC: G03F7/20

    CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

    Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

    Abstract translation: 一种基于模型的调谐方法，用于利用参考光刻系统调整第一光刻系统，每个参考光刻系统具有用于控制成像性能的可调参数。 该方法包括定义测试图案和成像模型的步骤; 使用参考光刻系统成像测试图案并测量成像结果; 使用第一光刻系统成像测试图案并测量成像结果; 使用对应于参考光刻系统的成像结果校准成像模型，其中校准的成像模型具有第一组参数值; 使用对应于第一光刻系统的成像结果来调整校准的成像模型，其中调谐的校准模型具有第二组参数值; 以及基于第一组参数值和第二组参数值之间的差异来调整第一光刻系统的参数。

    Methods and system for model-based generic matching and tuning
    32.
    发明授权
    Methods and system for model-based generic matching and tuning 有权
    基于模型的通用匹配和调优的方法和系统

    公开(公告)号：US08893058B2

    公开(公告)日：2014-11-18

    申请号：US13893534

    申请日：2013-05-14

    Applicant: ASML Netherlands B.V.

    Inventor： Yu Cao ,  Hanying Feng ,  Jun Ye

    IPC: G06F17/50 ,  G03B27/42 ,  G03B27/54 ,  G03B27/58 ,  G03B27/32 ,  G03F7/20 ,  G03F1/00 ,  G03F1/36

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

    Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

    Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。

    Fast freeform source and mask co-optimization method
    35.
    发明授权
    Fast freeform source and mask co-optimization method 有权

    公开(公告)号：US11042687B2

    公开(公告)日：2021-06-22

    申请号：US16821048

    申请日：2020-03-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Yu Cao

    IPC: G06F30/398 ,  G06F30/39 ,  G03F7/20 ,  G03F1/36

    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION
    36.
    发明申请
    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION 审中-公开

    公开(公告)号：US20190163866A1

    公开(公告)日：2019-05-30

    申请号：US16265367

    申请日：2019-02-01

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50 ,  G03F7/20 ,  G03F1/36 ,  G03F1/00

    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
    38.
    发明授权
    Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration 有权

    公开(公告)号：US10025885B2

    公开(公告)日：2018-07-17

    申请号：US14589738

    申请日：2015-01-05

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng ,  Wenjin Shao

    IPC: G06G7/48 ,  G06F17/50 ,  G03F1/00 ,  G03F1/44 ,  G03F7/20 ,  G06F17/10 ,  G03F1/68

    Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

    Optimization of source, mask and projection optics
    39.
    发明授权
    Optimization of source, mask and projection optics 有权

    公开(公告)号：US09619603B2

    公开(公告)日：2017-04-11

    申请号：US14543498

    申请日：2014-11-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20

    CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5009 ,  G06F2217/06 ,  G06F2217/08 ,  G06F2217/10 ,  G06F2217/12

    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION
    40.
    发明申请
    THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION 审中-公开
    用于光刻模拟的三维掩模模型

    公开(公告)号：US20160357900A1

    公开(公告)日：2016-12-08

    申请号：US15174732

    申请日：2016-06-06

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peng LIU ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/36

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009 ,  G06F17/5068

    Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Abstract translation: 一种三维掩模模型，其提供具有亚波长特征的光刻掩模的三维效果比薄膜模型更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

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