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96 records (took 0.022 seconds)

    32.
    发明专利
    未知

    公开(公告)号：DE69535550D1

    公开(公告)日：2007-09-20

    申请号：DE69535550

    申请日：1995-09-28

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  YAMANOBE MASATO ,  NOMURA ICHIRO ,  SUZUKI HIDETOSHI ,  BANNO YOSHIKAZU ,  TSUKAMOTO TAKEO ,  KAWATE SHINICHI ,  TAKEDA TOSHIHIKO ,  YAMAMOTO KEISUKE ,  SANDO KAZUHIRO ,  HAMAMOTO YASUHIRO

    IPC: H01J9/02 ,  H01J1/316

    Abstract: In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing.a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.

    33.
    发明专利
    未知

    公开(公告)号：AT369620T

    公开(公告)日：2007-08-15

    申请号：AT95306857

    申请日：1995-09-28

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  YAMANOBE MASATO ,  NOMURA ICHIRO ,  SUZUKI HIDETOSHI ,  BANNO YOSHIKAZU ,  TSUKAMOTO TAKEO ,  KAWATE SHINICHI ,  TAKEDA TOSHIHIKO ,  YAMAMOTO KEISUKE ,  SANDO KAZUHIRO ,  HAMAMOTO YASUHIRO

    IPC: H01J9/02 ,  H01J1/316

    Abstract: In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing.a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.

    34.
    发明专利
    未知

    公开(公告)号：AT252768T

    公开(公告)日：2003-11-15

    申请号：AT98204492

    申请日：1995-08-25

    Applicant: CANON KK

    Inventor： KISHI FUMIO ,  YAMANOBE MASATO ,  TSUKAMOTO TAKEO ,  OHNISHI TOSHIKAZU ,  IKEDA SOTOMITSU ,  HAMAMOTO YASUHIRO ,  MIYAZAKI KAZUYA ,  YAMAMOTO KEISUKE

    IPC: H01J1/316 ,  H01J9/02

    Abstract: An electron-emitting device (1-5) having a pair of electrodes (2,3), an electroconductive film (4) arranged between the electrodes (2,3), and a gap formed in the electroconductive film, defining an electron-emitting region (5), is exposed to an atmosphere containing one or more than one organic substance and a gas having a composition expressed by the general formula XY (where both X and Y represent a hydrogen or a halogen atom) while a voltage, preferably a bipolar pulse voltage, is applied across the electrodes (2,3).

    36.
    发明专利
    未知

    公开(公告)号：DE69516945D1

    公开(公告)日：2000-06-21

    申请号：DE69516945

    申请日：1995-07-10

    Applicant: CANON KK

    Inventor： IKEDA SOTOMITSU ,  OHNISHI TOSHIKAZU ,  YAMANOBE MASATO ,  IWASAKI TATSUYA ,  KAWADE HISAAKI

    IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30

    Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.

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