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    31.
    发明专利
    未知

    公开(公告)号：DE69224827T2

    公开(公告)日：1998-09-10

    申请号：DE69224827

    申请日：1992-05-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/8605 ,  H01L29/86

    Abstract: A spiral resistor (1), being of a type formed on a semiconductor substrate (2) to withstand high voltages, comprises at least one thin field-plate layer (6) covering said substrate (2) between adjacent turns (5) of the resistor. This prevents the well-known phenomenon of the "phantom gate" from occurring which would result in the characteristics of spiral resistors deteriorating over time.

    32.
    发明专利
    未知

    公开(公告)号：DE69214010T2

    公开(公告)日：1997-04-03

    申请号：DE69214010

    申请日：1992-05-15

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： SUERI STEFANO ,  PALARA SERGIO

    IPC: H03K17/14 ,  H03K17/042 ,  H03K17/64 ,  H03K17/04

    Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).

    35.
    发明专利
    未知

    公开(公告)号：DE69326543T2

    公开(公告)日：2000-01-05

    申请号：DE69326543

    申请日：1993-04-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/73 ,  H01L21/331 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L29/732 ,  H01L29/78 ,  H01L27/08

    Abstract: A structure of an electronic device having a predetermined unidirectional conduction threshold, being formed on a chip of an N-semiconductor material, comprises a plurality of isolated N-regions (16a-c), each bounded laterally by an isolating region (15a-c) and at the bottom by two buried P- and N-regions which form in combination a junction with a predetermined reverse conduction threshold, and means (15a,18,17b,15b,17c) of connecting the junctions of the various isolated regions serially together in the same conduction sense; the buried N-region of the first junction (Z1) in the series is connected to a common electrode (C), which also is one terminal of the device, over an internal path (R) of the N-material of the chip, and the buried P-region of the last junction (Zn) in the series contains an additional buried N-region (14d) which is connected electrically to a second terminal (18a) of the device.

    38.
    发明专利
    未知

    公开(公告)号：DE69127359T2

    公开(公告)日：1998-03-19

    申请号：DE69127359

    申请日：1991-06-27

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： AIELLO NATALE ,  PALARA SERGIO

    IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/082 ,  H03K17/00 ,  H03K17/0814 ,  H03K17/30 ,  H03K17/62 ,  H03K19/094

    Abstract: In a switching circuit suitable for connecting a first circuit node (1) to a second (2) or to a third (3) circuit node in relation to the latter's potential, particularly for controlling the potential of an insulation region of an integrated circuit in relation to the substrate's potential, there is a first NPN bipolar transistor (T1) with the function of a switch having the collector connected to the first circuit node (1) and the emitter connected to the second circuit node (2) and a second NPN bipolar transistor (T2) with the function of a switch having the collector connected to the first circuit node (1) and the emitter connected to the third circuit node (3). There are means (D1, T5, T6) for maintaining the base of the second transistor (T2) at a constant pre-set bias voltage.

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