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    MEMS RF-SWITCH WITH CONTROLLED CONTACT LANDING
    31.
    发明公开
    MEMS RF-SWITCH WITH CONTROLLED CONTACT LANDING 审中-公开

    公开(公告)号：EP3378088A1

    公开(公告)日：2018-09-26

    申请号：EP16804971.6

    申请日：2016-11-15

    Applicant: Cavendish Kinetics, Inc.

    Inventor： VAN KAMPEN, Robertus Petrus ,  KNIPE, Richard L. ,  RENAULT, Mickael ,  DASTIDER, Shibajyoti Ghosh ,  MUYANGO, Jaques Marcel

    IPC: H01H59/00 ,  B81B3/00

    CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B3/0035 ,  B81B2201/016 ,  H01G5/16 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

    RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS
    34.
    发明公开
    RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS 审中-公开
    RF-MEMS-ISOLIERUNG，REIHEN- UND NEBENANSCHLUSS-DVC UND KLEINES MEMS

    公开(公告)号：EP2751818A2

    公开(公告)日：2014-07-09

    申请号：EP12772159.5

    申请日：2012-08-31

    Applicant: Cavendish Kinetics Inc.

    Inventor： GADDI, Roberto ,  KNIPE, Richard L. ,  VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz

    IPC: H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H59/00

    CPC classification number: H01L28/60 ,  B81B3/0086 ,  B81B2201/016 ,  B81B2207/015 ,  H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H59/0009 ,  H03K17/162 ,  H03K17/6872 ,  H03K2217/0009 ,  H03K2217/0036 ,  H03K2217/009

    Abstract: The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.

    Abstract translation: 本发明一般涉及用于将RF MEMS器件与衬底以及驱动电路，串联和分流DVC管芯结构以及用于高频通信的较小MEMS阵列隔离的架构。 半导体器件具有一个或多个具有多个MEMS器件的单元。 MEMS器件通过将电偏压施加到上拉电极或下拉电极来操作，以将MEMS器件的开关元件移动在与RF电极间隔开第一距离的第一位置和间隔第二位置的第二位置 距离与RF电极的第一距离不同。 上拉和/或下拉电极可以耦合到电阻器以将MEMS器件与衬底隔离。

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