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    35.
    发明专利
    未知

    公开(公告)号：DE602006008682D1

    公开(公告)日：2009-10-08

    申请号：DE602006008682

    申请日：2006-03-08

    Applicant: GEN ELECTRIC

    Inventor： MANIVANNAN VENKATESAN ,  DUCLOS STEVEN JUDE ,  ALBAGLI DOUGLAS ,  BUENO CLIFFORD ,  STOKLOSA STANLEY JOHN ,  MCCONNELEE PAUL ALAN

    IPC: G01N23/04 ,  C09K11/02 ,  G01T1/20 ,  G21K4/00

    Abstract: An adaptable imaging assembly (20) is provided. The adaptable imaging assembly (20) includes a free-standing phosphor film (10) configured to receive incident radiation and to emit corresponding optical signals. An electronic device (12) is coupled to the free-standing phosphor film (10). The electronic device (12) is configured to receive the optical signals from the free-standing phosphor film (10) and to generate an imaging signal. A free-standing phosphor film (10) is also provided and includes x-ray phosphor particles dispersed in a silicone binder. A method for inspecting a component is also provided and includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film (10), receiving the optical signals with an electronic device (12) coupled to the free-standing phosphor film (10) and generating an imaging signal using the electronic device (12).

    36.
    发明专利
    未知

    公开(公告)号：DE60033913T2

    公开(公告)日：2007-12-06

    申请号：DE60033913

    申请日：2000-10-19

    Applicant: GEN ELECTRIC

    Inventor： POSSIN GEORGE EDWARD ,  KWASNICK ROBERT FORREST ,  WEI CHING-YEU ,  ALBAGLI DOUGLAS

    IPC: G01T1/20 ,  H01L27/146 ,  H01L27/14 ,  H01L29/786 ,  H01L31/0216 ,  H01L31/10 ,  H04N5/32

    Abstract: A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.

    37.
    发明专利
    未知

    公开(公告)号：FR2849574B1

    公开(公告)日：2007-09-21

    申请号：FR0314179

    申请日：2003-12-03

    Applicant: GEN ELECTRIC

    Inventor： DHAWALE PARITOSH JAYANT ,  ALBAGLI DOUGLAS

    IPC: A61B6/00 ,  H05G1/30 ,  G01D18/00 ,  G01T1/36 ,  G06T1/00 ,  G06T5/00 ,  G06T5/40 ,  H04N5/32 ,  H05G1/64

    Abstract: A technique is provided in which a gain correction map derived for a detector at one X-ray spectrum may be adapted to accommodate images acquired by the detector at a different X-ray spectrum. The technique accounts for the physical variations in the detector which may produce spectrally-sensitive artifacts as well as for the particular image acquisition conditions. A technique is also provided for correcting edge artifacts in an acquired image by measuring median signal intensity within columns or rows of the image and deriving correction factors for the respective edge columns or rows based upon the trends of the median signal intensities. A technique is also provided for storing detector attributes during a manufacturing calibration process and accessing them during system operation such that a suitable gain correction factor is employed based upon the spectrum and operating conditions.

    38.
    发明专利
    未知

    公开(公告)号：FR2860921B1

    公开(公告)日：2007-05-11

    申请号：FR0410697

    申请日：2004-10-11

    Applicant: GEN ELECTRIC

    Inventor： LEE JI UNG ,  ALBAGLI DOUGLAS ,  POSSIN GEORGE EDWARD ,  HENNESSY WILLIAM ANDREW ,  WEI CHING YEU

    IPC: G01T1/20 ,  H01L27/146 ,  G02F1/136 ,  H01L21/02 ,  H01L27/14 ,  H01L31/09

    Abstract: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    39.
    发明专利
    未知

    公开(公告)号：DE102005060239A1

    公开(公告)日：2006-07-13

    申请号：DE102005060239

    申请日：2005-12-14

    Applicant: GEN ELECTRIC

    Inventor： ALBAGLI DOUGLAS ,  HENNESSY WILLIAM ANDREW ,  COUTURE AARON JUDY ,  COLLAZO-DAVILA CHRISTOPHER

    IPC: G01T1/29 ,  G01T1/24 ,  H01L29/786

    Abstract: An annular thin film transistor includes an annular source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of the semiconductor material within the annular source electrode, and an active channel between the drain electrode and the annular source electrode, wherein a surface of the active channel comprises exposed semiconductor material. Further, a serpentine thin film transistor includes a serpentine source electrode disposed above the layer of the semiconductor material, a drain electrode disposed above the layer of semiconductor material and substantially within a recess formed by the serpentine source electrode, wherein the drain electrode is configured to substantially conform to the recess, and an active channel between the drain electrode and the serpentine source electrode, wherein the active channel has a substantially consistent length, and wherein a surface of the active channel comprises exposed semiconductor material.

    TRANSISTOR A COUCHES MINCES POUR SYSTEME D'IMAGERIE
    40.
    发明专利
    TRANSISTOR A COUCHES MINCES POUR SYSTEME D'IMAGERIE 未知

    公开(公告)号：FR2879755A1

    公开(公告)日：2006-06-23

    申请号：FR0512961

    申请日：2005-12-20

    Applicant: GEN ELECTRIC

    Inventor： ALBAGLI DOUGLAS ,  HENNESSY WILLIAM ANDREW ,  COUTURE AARON JUDY ,  COLLAZO DAVILA CHRISTOPHER

    IPC: G01T1/20 ,  H01L27/146 ,  H01L29/786

    Abstract: Transistor annulaire (60) à couches minces comprenant une électrode annulaire de source (62) disposée par-dessus une couche (66) en matériau semi-conducteur, une électrode de drain (64) disposée par-dessus la couche (66) du matériau semi-conducteur à l'intérieur de l'électrode annulaire de source (62), et un canal actif (76) entre l'électrode de drain (64) et l'électrode annulaire de source (62), une surface du canal actif (76) étant constituée par du matériau semi-conducteur découvert. En outre, un transistor sinueux à couches minces comprend une électrode sinueuse de source disposée par-dessus la couche du matériau semi-conducteur, une électrode de drain disposée par-dessus la couche de matériau semi-conducteur et sensiblement à l'intérieur d'un évidement formé par l'électrode sinueuse de source, l'électrode de drain étant configurée pour épouser sensiblement la forme de l'évidement, et un canal actif entre l'électrode de drain et l'électrode sinueuse de source, le canal actif ayant une longueur sensiblement constante, et une surface du canal actif étant constituée par du matériau semi-conducteur découvert.

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