公开(公告)号：EP3221903A1

公开(公告)日：2017-09-27

申请号：EP15897982.3

申请日：2015-07-14

Applicant: Goertek Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/32

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/83192 ,  H01L2933/005 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

Abstract translation: 公开了一种微LED的转印方法，制造方法，装置和电子设备。 用于传输微型LED的方法包括：在激光透明的原始基板（406）上形成微型LED（505,506,507），其中微型LED（505,506,507）是横向微型LED（505） ，其P个电极（505p，506p，507p）和N个电极（505n，506n，507n）位于一侧; 使横向微型LED（505,506,507）的P电极（505p，506p，507p）和N电极（505n，506n，507n）与预设在接收基板上的焊盘（515,516,517） （504）; 以及用来自原始衬底（406）侧的激光（413）照射原始衬底（406）以从原始衬底（406）剥离横向微型LED（505,506,507）。 使用横向微型LED的技术效果在于，可以省略微型LED传输之后的N金属电极的处理。

公开(公告)号：EP3221882A1

公开(公告)日：2017-09-27

申请号：EP15897979.9

申请日：2015-07-14

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L21/50

CPC classification number: H01L24/97 ,  H01L21/50 ,  H01L21/6835 ,  H01L22/14 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/32013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81011 ,  H01L2224/81121 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/81907 ,  H01L2224/83005 ,  H01L2224/83101 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2221/68304 ,  H01L21/78 ,  H01L22/10 ,  H01L2224/83104 ,  H01L2924/014

Abstract: The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

Abstract translation: 公开了一种倒装芯片的组装方法，制造方法，装置和电子装置。 用于组装翻转模的方法包括：将翻转模（205）暂时接合到激光透明的第一基板（204）上，其中翻转模（205）的凸块（202）位于激光透过的第一基板 与所述第一基板（204）相对的所述翻转模（205）; 将凸块（202）与衬垫（206）对准在接收衬底（207）上; 用激光（208）从所述第一衬底侧照射所述原始衬底以从所述第一衬底（204）剥离所述倒装管芯（205）; 并将翻转模（205）附着在接收基板（207）上。 可以实现更快的组装速度，更小的芯片尺寸和更低的外形。

公开(公告)号：EP3218939A1

公开(公告)日：2017-09-20

申请号：EP15901411.7

申请日：2015-08-18

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L21/67144 ,  H01L24/83 ,  H01L24/95 ,  H01L27/15 ,  H01L33/0095 ,  H01L33/405 ,  H01L2924/12042

Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.

Abstract translation: 一种微型LED的预检方法，制造方法，装置及电子装置。 预先筛选缺陷微型LED的方法包括：获取激光透明基板上的缺陷微型LED的缺陷图案（S6100）; 并根据缺陷图案从激光透明衬底侧用激光照射激光透明衬底（S6200），以从激光透明衬底剥离缺陷微型LED。