公开(公告)号：WO2018161260A1

公开(公告)日：2018-09-13

申请号：PCT/CN2017/075899

申请日：2017-03-07

Applicant: GOERTEK INC.

Inventor： WANG, Zhe ,  ZHANG, Xiaoyang ,  ZOU, Quanbo

IPC: H04N5/74 ,  G02B27/18 ,  G02B26/08

Abstract: A laser projection device and a laser projection system. The laser projection device comprises a light source scanner (1) and a MEMS scanning mirror (2), the light source scanner (1) comprising micro laser diodes (11); and the micro laser diodes (11) are used to provide laser beams needed for image projection, and the laser beams are projected to the MEMS scanning mirror (2), and then reflected by the MEMS scanning mirror (2) to a predetermined area (3) to form a projection image. By providing the micro laser diodes (11) in the laser projection device and initiatively emitting laser by exciting the micro laser diodes (11), the laser projection device does not need an external laser source and facilitates the reduction of the size of the laser projection device, as compared with the prior art.

公开(公告)号：WO2016008106A1

公开(公告)日：2016-01-21

申请号：PCT/CN2014/082266

申请日：2014-07-15

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: B81C1/00 ,  H04R19/01 ,  H04R19/04

CPC classification number: H04R7/14 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/0023 ,  B81C2201/115 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/15192 ,  H04R1/04 ,  H04R19/016 ,  H04R19/04 ,  H04R2201/003 ,  H04R2307/027 ,  H01L2924/00014

Abstract: A silicon microphone (10) with a high-aspect-ratio corrugated diaphragm (200). The microphone (10) comprises a compliant diaphragm (200) on which at least one ring-shaped corrugation (210) is formed in the vicinity of the edge of the diaphragm (200) which is fixed to the substrate (100), wherein the depth of the corrugation (210) to the thickness of the diaphragm (200) is larger than 5:1, preferably 20:1, and the walls of the corrugation (210) are inclined to the surface of the diaphragm (200) at an angle in the range of 80º to 100º. The microphone (10) with a high-aspect-ratio corrugated diaphragm (200) can achieve a consistent and optimal sensitivity and reduce impact applied thereto in a drop test so that the performances, the reproducibility, the reliability and the yield can be improved.

Abstract translation: 一种具有高纵横比波纹膜片（200）的硅麦克风（10）。 麦克风（10）包括柔性隔膜（200），在膜片（200）的边缘附近形成有至少一个环形波纹（210），所述波纹固定在基板（100）上，其中 波纹（210）的深度与隔膜（200）的厚度大于5:1，优选为20:1，并且波纹（210）的壁在隔膜（200）的表面处以 角度范围为80º至100º。 具有高纵横比的波纹状隔膜（200）的麦克风（10）可以实现一致和最佳的灵敏度并降低在跌落试验中施加的冲击，从而可以提高性能，再现性，可靠性和产量。

公开(公告)号：WO2012122696A1

公开(公告)日：2012-09-20

申请号：PCT/CN2011/071741

申请日：2011-03-11

Applicant: GOERTEK INC. ,  WANG, Zhe

Inventor： WANG, Zhe

IPC: H04R19/04 ,  H04R19/00

CPC classification number: B81B3/0078 ,  B81B2207/015 ,  B81C1/00246 ,  H04R19/005 ,  H04R19/04

Abstract: A CMOS compatible silicon differential condenser microphone and a method for manufacturing the same are provided. The microphone(1000) comprises a silicon substrate(100), wherein a CMOS circuitry is accommodated thereon; a first rigid conductive perforated backplate(200) supported on the silicon substrate with an insulating layer(120) inserted therebetween; a second rigid perforated backplate(400) formed above the first backplate, including CMOS passivation layers(400a, 400c) and a metal layer(400b) sandwiched between the CMOS passivation layers as an electrode plate of the second plate, wherein an air gap, with a spacer forming its boundary, is provided between the opposite perforated areas of the first backplate and the second backplate; a compliant diaphragm(300) provided between the first backplate and the second backplate, wherein a back hole(150) is formed to be open in the silicon substrate underneath the first backplate so as to allow sound pass through, and the diaphragm and the first backplate form a first variable condenser, the diaphragm and the second backplate form a second variable condenser, and the first variable condenser and the second variable condenser form differential condensers.

Abstract translation: 提供CMOS兼容的硅差分电容话筒及其制造方法。 麦克风（1000）包括硅衬底（100），其中容纳CMOS电路; 支撑在硅衬底上的绝缘层（120）插入其间的第一刚性导电多孔背板（200）; 形成在第一背板上方的第二刚性多孔背板（400），包括CMOS钝化层（400a，400c）和夹在作为第二板的电极板的CMOS钝化层之间的金属层（400b），其中气隙， 具有形成其边界的间隔件设置在第一背板和第二背板的相对的穿孔区域之间; 设置在所述第一背板和所述第二背板之间的柔性隔膜（300），其中形成在所述第一背板下方的所述硅基板中开口的后孔（150），以允许声音通过，并且所述隔膜和所述第一 背板形成第一可变冷凝器，隔膜和第二背板形成第二可变冷凝器，第一可变冷凝器和第二可变冷凝器形成差动冷凝器。

公开(公告)号：WO2018201471A1

公开(公告)日：2018-11-08

申请号：PCT/CN2017/083306

申请日：2017-05-05

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  YAN, Jiangliang

IPC: H04R19/04 ,  H04R1/08

Abstract: A MEMS microphone, comprising a packaging structure that is enveloped by a PCB substrate (1) and a housing (2), wherein the packaging structure is provided with a MEMS acoustoelectric chip (3) therein, and the PCB substrate (1) is provided with a sound port (11) at a position that is corresponding to the MEMS acoustoelectric chip (3), wherein, the MEMS microphone further comprises a filter (5), wherein the filter (5) is embedded into a back cavity of the MEMS acoustoelectric chip (3), the filter (5) and the PCB substrate (1) have a lateral hole therebetween, and the lateral hole serves as a sound channel that is used by the MEMS acoustoelectric chip (3)to gather sound. The MEMS microphone can prevent gas shock, block the interfering to the MEMS microphone by kinetic particles, keep the acoustic performance of the MEMS microphone, and reduce the packaging size of the MEMS microphone.

公开(公告)号：WO2018161259A1

公开(公告)日：2018-09-13

申请号：PCT/CN2017/075898

申请日：2017-03-07

Applicant: GOERTEK INC.

Inventor： WANG, Zhe ,  ZHANG, Xiaoyang ,  ZOU, Quanbo

IPC: G02B26/10

Abstract: A laser projection device and a laser projection system are provided. The laser projection device comprises an optical fiber scanner (1) and a MEMS scanning mirror (2). An optical fiber (11) is disposed on the optical fiber scanner (1) and the optical fiber (11) is used to deliver laser beams needed by projection. The optical fiber scanner (1) drives the optical fiber (11) to scan in a first plane and enables the laser beam to project to the MEMS scanning mirror (2), and the MEMS scanning mirror (2) makes scanning movement about a first axis and reflects the laser beam to a predetermined area (3) to form a projection image, wherein the first axis is located in the first plane, or the first axis is parallel to the first plane. Different from the manner in the prior art that the optical fiber scanner or the MEMS scanning mirror makes dual-axis movement individually to implement projection, this laser projection device achieves laser projection by enabling the optical fiber scanner and the MEMS scanning mirror to scan simultaneously in different directions.

公开(公告)号：WO2016029357A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085204

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  TAO, Jifang ,  QIU, Guanxun

IPC: H04R31/00 ,  H04R7/00 ,  H04R7/06 ,  H04R9/06

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: Providing a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate (1) to obtain an insulating layer (2) thereon and providing a metal layer (3) on the insulating layer (2); providing a sacrificial layer (4) on the metal layer (3); providing a first thermal bimorph layer (5) on the sacrificial layer (4); providing a second thermal bimorph layer (6) on the first thermal bimorph layer (5); providing a metal connecting layer (7) at the positions on the metal layer (3) where the sacrificial layer (4) is not provided; forming corresponding back holes (16) on the substrate (1) and the insulating layer (2) and releasing the sacrificial layer (4); forming a warped thermal bimorph diaphragm with the first thermal bimorph layer (5) and the second thermal bimorph layer (6) after the sacrificial layer (4) is released. With the MEMS speaker with thermal bimorphs, the problems of high production cost, complicated wafer process and limitations on sound performance improvements are solved.

Abstract translation: 提供用于制造具有热双压电晶片的热双压电晶片和MEMS扬声器的方法，其中该方法包括以下步骤：对衬底（1）进行热氧化以在其上获得绝缘层（2）并在其上提供金属层（3） 绝缘层（2）; 在所述金属层（3）上提供牺牲层（4）; 在所述牺牲层（4）上提供第一热双压电晶片（5）; 在所述第一热双压电晶片层（5）上提供第二热双压电晶片（6）。 在不设置牺牲层（4）的金属层（3）上的位置设置金属连接层（7） 在基板（1）和绝缘层（2）上形成对应的后孔（16）并释放牺牲层（4）; 在所述牺牲层（4）被释放之后，与所述第一热双压电晶片（5）和所述第二热双压电晶片层（6）形成翘曲的热双压电晶片。 使用具有热双压电晶片的MEMS扬声器，解决了高生产成本，复杂的晶片工艺和声音性能改进的限制的问题。

公开(公告)号：WO2018218512A1

公开(公告)日：2018-12-06

申请号：PCT/CN2017/086622

申请日：2017-05-31

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  ZHANG, Xiaoyang

IPC: G02F1/133 ,  G09G3/20

Abstract: An image display device comprises: a thin film transistor backplane (1), and a first resolution display panel (2), a second resolution display panel (4), a display driving chip (3) and an integrated display driver (5), which are fixed on the thin film transistor backplane (1); the display driving chip (3) is electrically connected to bonding pads (111) on the thin film transistor backplane (1), and is provided under the second resolution display panel (4); and the display driving chip (3) is used for driving the second resolution display panel (4); the integrated display driver (5) is used for driving the first resolution display panel (2); and a resolution of the first resolution display panel (2) is lower than a resolution of the second resolution display panel (4). The first resolution display panel (2) is driven by the standard drive manner of thin film transistor display panels, to realize low resolution displaying, and the second resolution display panel (4) is driven by the display driving chip (3), to improve the displaying quality of the display device.

公开(公告)号：WO2015017979A1

公开(公告)日：2015-02-12

申请号：PCT/CN2013/080908

申请日：2013-08-06

Applicant: GOERTEK INC.

Inventor： WANG, Zhe

IPC: H04R17/02

CPC classification number: H04R7/16 ,  H04R19/005 ,  H04R19/04 ,  H04R2307/023

Abstract: The present invention relates to an anti-impact silicon based MEMS microphone, a system and a package with the same, the microphone comprises: a silicon substrate provided with a back hole therein; a compliant diaphragm supported on the silicon substrate and disposed above the back hole thereof; a perforated backplate disposed above the diaphragm with an air gap sandwiched in between, and further provided with one or more first thorough holes therein; and a stopper mechanism, including one or more T-shaped stoppers corresponding to the one or more first thorough holes, each of which has a lower part passing through its corresponding first thorough hole and connecting to the diaphragm and an upper part being apart from the perforated backplate and free to vertically move, wherein the diaphragm and the perforated backplate are used to form electrode plates of a variable condenser. In the anti-impact microphone, the stopper mechanism may help to restrain the fragile and brittle diaphragm from large movement induced by sound pressure impact in a drop test and thus prevent the diaphragm from being damaged.

Abstract translation: 本发明涉及一种抗冲击硅基MEMS麦克风，一种系统及其封装，麦克风包括：在其中设置有后孔的硅基板; 支撑在硅衬底上并配置在其后孔上方的柔性膜片; 设置在隔膜上方的穿孔背板，其间夹有气隙，并且还在其中设置有一个或多个第一通孔; 以及止动机构，其包括一个或多个对应于所述一个或多个第一通孔的T形挡块，每个所述一个或多个第一通孔具有穿过其相应的第一通孔并连接到所述隔膜的下部， 穿孔背板并自由垂直移动，其中隔膜和多孔背板用于形成可变冷凝器的电极板。 在抗冲击麦克风中，止动机构可以有助于在跌落试验中由脆弱的和易碎的振动膜抑制由声压冲击引起的大的运动，从而防止隔膜被损坏。

公开(公告)号：WO2012012939A1

公开(公告)日：2012-02-02

申请号：PCT/CN2010/075514

申请日：2010-07-28

Applicant: GOERTEK INC. ,  WANG, Zhe

Inventor： WANG, Zhe

IPC: B81B7/00 ,  B81C1/00 ,  H04R7/00

CPC classification number: H04R31/00 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H04R19/005 ,  H04R19/04

Abstract: The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portions thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap, provided between the diaphragm and the microphone backplate, wherein a spacer forming a boundary of the air gap is provided outside of the diaphragm or on the edge of the diaphragm; wherein a back hole is formed to be open in substrate underneath the diaphragm so as to allow sound pass through, and the microphone diaphragm is used as an electrode plate to form a variable capacitive sensing element with the electrode plate of the microphone backplate.

Abstract translation: 本发明涉及一种CMOS兼容MEMS麦克风，包括：SOI衬底，其中CMOS电路容纳在其硅器件层上; 形成有硅器件层的一部分的麦克风隔膜，其中所述麦克风隔膜被掺杂以变成导电; 麦克风背板，其具有夹在金属层上的CMOS钝化层和设置在硅器件层上方的多个通孔，其中多个通孔形成在与麦克风隔膜相对的部分中，并且金属层形成 背板电极板; 从所述麦克风背板的与所述隔膜相对的下表面突出的多个凹坑; 以及设置在隔膜和麦克风背板之间的气隙，其中形成气隙边界的间隔件设置在隔膜的外侧或隔膜的边缘上; 其特征在于，在所述振动板的下方的基板上形成有开放的孔，以使声音通过，所述麦克风隔膜用作电极板，以形成具有所述麦克风背板的电极板的可变电容感测元件。

公开(公告)号：WO2016029365A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085222

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H04R19/04 ,  B81B7/00

CPC classification number: H04R19/005 ,  B81B3/001 ,  B81B7/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/0023 ,  B81C2203/0118 ,  B81C2203/058 ,  B81C2203/0785 ,  H04R19/04 ,  H04R31/00 ,  H04R31/006 ,  H04R2201/003

Abstract: A method for manufacturing a fully wafer-level-packaged MEMS microphone and a microphone manufactured with the same are provided, the method comprises: separately manufacturing a first packaging wafer, an MEMS microphone wafer and a second packaging wafer; performing wafer-to-wafer bonding for the three wafers to form a plurality of fully wafer-level-packaged MEMS microphone units; singulating the fully wafer-level-packaged MEMS microphone units to form a plurality of fully wafer-level-packaged MEMS microphones, which are fully packaged at wafer level and do not need any further process after die singulation. The method can improve cost-effectiveness, performance consistency, manufacturability, quality, scaling capability of the packaged MEMS microphone.

Abstract translation: 提供了一种用于制造全晶片级封装的MEMS麦克风和由其制造的麦克风的方法，该方法包括：分别制造第一封装晶片，MEMS麦克风晶片和第二封装晶片; 对三个晶片执行晶片到晶片接合以形成多个完全晶片级封装的MEMS麦克风单元; 将全部晶圆级封装的MEMS麦克风单元分开，以形成多个完全晶片级封装的MEMS麦克风，其在晶片级完全封装，并且在单片化之后不需要任何进一步的处理。 该方法可以提高封装的MEMS麦克风的成本效益，性能一致性，可制造性，质量，扩展能力。