公开(公告)号：WO2018227453A1

公开(公告)日：2018-12-20

申请号：PCT/CN2017/088381

申请日：2017-06-15

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  CHEN, Peixuan

IPC: H01L33/00

Abstract: The present disclosure discloses a method for transferring micro-light emitting diodes, a micro-light emitting diode device and an electronic device. The method for transferring micro-light emitting diodes comprises: providing bumps of bonding agent on electrode bonding pads of a receiving substrate and/or on micro-light emitting diodes of an original substrate； aligning and contacting the electrode bonding pads of the receiving substrate and the micro-light emitting diodes of the original substrate, to position the bumps of bonding agent between the micro-light emitting diodes and the electrode bonding pads； irradiating locally by using a first laser from the original substrate side, to melt the bumps of bonding agent to bond the micro-light emitting diodes and the electrode bonding pads； and stripping off the micro-light emitting diodes from the original substrate, to transfer the micro-light emitting diodes to the receiving substrate. The present disclosure, by heating quickly and locally by laser irradiation, avoids the overall warming-up of the receiving substrate and the original substrate, reduces the heat mismatch phenomenon, optimizes the flow of the bonding of the micro-light emitting diodes, and facilitates the controlling.

公开(公告)号：WO2018161260A1

公开(公告)日：2018-09-13

申请号：PCT/CN2017/075899

申请日：2017-03-07

Applicant: GOERTEK INC.

Inventor： WANG, Zhe ,  ZHANG, Xiaoyang ,  ZOU, Quanbo

IPC: H04N5/74 ,  G02B27/18 ,  G02B26/08

Abstract: A laser projection device and a laser projection system. The laser projection device comprises a light source scanner (1) and a MEMS scanning mirror (2), the light source scanner (1) comprising micro laser diodes (11); and the micro laser diodes (11) are used to provide laser beams needed for image projection, and the laser beams are projected to the MEMS scanning mirror (2), and then reflected by the MEMS scanning mirror (2) to a predetermined area (3) to form a projection image. By providing the micro laser diodes (11) in the laser projection device and initiatively emitting laser by exciting the micro laser diodes (11), the laser projection device does not need an external laser source and facilitates the reduction of the size of the laser projection device, as compared with the prior art.

公开(公告)号：WO2016008106A1

公开(公告)日：2016-01-21

申请号：PCT/CN2014/082266

申请日：2014-07-15

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: B81C1/00 ,  H04R19/01 ,  H04R19/04

CPC classification number: H04R7/14 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/019 ,  B81C1/0023 ,  B81C2201/115 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/15192 ,  H04R1/04 ,  H04R19/016 ,  H04R19/04 ,  H04R2201/003 ,  H04R2307/027 ,  H01L2924/00014

Abstract: A silicon microphone (10) with a high-aspect-ratio corrugated diaphragm (200). The microphone (10) comprises a compliant diaphragm (200) on which at least one ring-shaped corrugation (210) is formed in the vicinity of the edge of the diaphragm (200) which is fixed to the substrate (100), wherein the depth of the corrugation (210) to the thickness of the diaphragm (200) is larger than 5:1, preferably 20:1, and the walls of the corrugation (210) are inclined to the surface of the diaphragm (200) at an angle in the range of 80º to 100º. The microphone (10) with a high-aspect-ratio corrugated diaphragm (200) can achieve a consistent and optimal sensitivity and reduce impact applied thereto in a drop test so that the performances, the reproducibility, the reliability and the yield can be improved.

Abstract translation: 一种具有高纵横比波纹膜片（200）的硅麦克风（10）。 麦克风（10）包括柔性隔膜（200），在膜片（200）的边缘附近形成有至少一个环形波纹（210），所述波纹固定在基板（100）上，其中 波纹（210）的深度与隔膜（200）的厚度大于5:1，优选为20:1，并且波纹（210）的壁在隔膜（200）的表面处以 角度范围为80º至100º。 具有高纵横比的波纹状隔膜（200）的麦克风（10）可以实现一致和最佳的灵敏度并降低在跌落试验中施加的冲击，从而可以提高性能，再现性，可靠性和产量。

公开(公告)号：WO2018218512A1

公开(公告)日：2018-12-06

申请号：PCT/CN2017/086622

申请日：2017-05-31

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  ZHANG, Xiaoyang

IPC: G02F1/133 ,  G09G3/20

Abstract: An image display device comprises: a thin film transistor backplane (1), and a first resolution display panel (2), a second resolution display panel (4), a display driving chip (3) and an integrated display driver (5), which are fixed on the thin film transistor backplane (1); the display driving chip (3) is electrically connected to bonding pads (111) on the thin film transistor backplane (1), and is provided under the second resolution display panel (4); and the display driving chip (3) is used for driving the second resolution display panel (4); the integrated display driver (5) is used for driving the first resolution display panel (2); and a resolution of the first resolution display panel (2) is lower than a resolution of the second resolution display panel (4). The first resolution display panel (2) is driven by the standard drive manner of thin film transistor display panels, to realize low resolution displaying, and the second resolution display panel (4) is driven by the display driving chip (3), to improve the displaying quality of the display device.

公开(公告)号：WO2018201471A1

公开(公告)日：2018-11-08

申请号：PCT/CN2017/083306

申请日：2017-05-05

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  YAN, Jiangliang

IPC: H04R19/04 ,  H04R1/08

Abstract: A MEMS microphone, comprising a packaging structure that is enveloped by a PCB substrate (1) and a housing (2), wherein the packaging structure is provided with a MEMS acoustoelectric chip (3) therein, and the PCB substrate (1) is provided with a sound port (11) at a position that is corresponding to the MEMS acoustoelectric chip (3), wherein, the MEMS microphone further comprises a filter (5), wherein the filter (5) is embedded into a back cavity of the MEMS acoustoelectric chip (3), the filter (5) and the PCB substrate (1) have a lateral hole therebetween, and the lateral hole serves as a sound channel that is used by the MEMS acoustoelectric chip (3)to gather sound. The MEMS microphone can prevent gas shock, block the interfering to the MEMS microphone by kinetic particles, keep the acoustic performance of the MEMS microphone, and reduce the packaging size of the MEMS microphone.

公开(公告)号：WO2018161259A1

公开(公告)日：2018-09-13

申请号：PCT/CN2017/075898

申请日：2017-03-07

Applicant: GOERTEK INC.

Inventor： WANG, Zhe ,  ZHANG, Xiaoyang ,  ZOU, Quanbo

IPC: G02B26/10

Abstract: A laser projection device and a laser projection system are provided. The laser projection device comprises an optical fiber scanner (1) and a MEMS scanning mirror (2). An optical fiber (11) is disposed on the optical fiber scanner (1) and the optical fiber (11) is used to deliver laser beams needed by projection. The optical fiber scanner (1) drives the optical fiber (11) to scan in a first plane and enables the laser beam to project to the MEMS scanning mirror (2), and the MEMS scanning mirror (2) makes scanning movement about a first axis and reflects the laser beam to a predetermined area (3) to form a projection image, wherein the first axis is located in the first plane, or the first axis is parallel to the first plane. Different from the manner in the prior art that the optical fiber scanner or the MEMS scanning mirror makes dual-axis movement individually to implement projection, this laser projection device achieves laser projection by enabling the optical fiber scanner and the MEMS scanning mirror to scan simultaneously in different directions.

公开(公告)号：WO2016029357A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085204

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe ,  TAO, Jifang ,  QIU, Guanxun

IPC: H04R31/00 ,  H04R7/00 ,  H04R7/06 ,  H04R9/06

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: Providing a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate (1) to obtain an insulating layer (2) thereon and providing a metal layer (3) on the insulating layer (2); providing a sacrificial layer (4) on the metal layer (3); providing a first thermal bimorph layer (5) on the sacrificial layer (4); providing a second thermal bimorph layer (6) on the first thermal bimorph layer (5); providing a metal connecting layer (7) at the positions on the metal layer (3) where the sacrificial layer (4) is not provided; forming corresponding back holes (16) on the substrate (1) and the insulating layer (2) and releasing the sacrificial layer (4); forming a warped thermal bimorph diaphragm with the first thermal bimorph layer (5) and the second thermal bimorph layer (6) after the sacrificial layer (4) is released. With the MEMS speaker with thermal bimorphs, the problems of high production cost, complicated wafer process and limitations on sound performance improvements are solved.

Abstract translation: 提供用于制造具有热双压电晶片的热双压电晶片和MEMS扬声器的方法，其中该方法包括以下步骤：对衬底（1）进行热氧化以在其上获得绝缘层（2）并在其上提供金属层（3） 绝缘层（2）; 在所述金属层（3）上提供牺牲层（4）; 在所述牺牲层（4）上提供第一热双压电晶片（5）; 在所述第一热双压电晶片层（5）上提供第二热双压电晶片（6）。 在不设置牺牲层（4）的金属层（3）上的位置设置金属连接层（7） 在基板（1）和绝缘层（2）上形成对应的后孔（16）并释放牺牲层（4）; 在所述牺牲层（4）被释放之后，与所述第一热双压电晶片（5）和所述第二热双压电晶片层（6）形成翘曲的热双压电晶片。 使用具有热双压电晶片的MEMS扬声器，解决了高生产成本，复杂的晶片工艺和声音性能改进的限制的问题。

公开(公告)号：WO2016029365A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085222

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H04R19/04 ,  B81B7/00

CPC classification number: H04R19/005 ,  B81B3/001 ,  B81B7/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/0023 ,  B81C2203/0118 ,  B81C2203/058 ,  B81C2203/0785 ,  H04R19/04 ,  H04R31/00 ,  H04R31/006 ,  H04R2201/003

Abstract: A method for manufacturing a fully wafer-level-packaged MEMS microphone and a microphone manufactured with the same are provided, the method comprises: separately manufacturing a first packaging wafer, an MEMS microphone wafer and a second packaging wafer; performing wafer-to-wafer bonding for the three wafers to form a plurality of fully wafer-level-packaged MEMS microphone units; singulating the fully wafer-level-packaged MEMS microphone units to form a plurality of fully wafer-level-packaged MEMS microphones, which are fully packaged at wafer level and do not need any further process after die singulation. The method can improve cost-effectiveness, performance consistency, manufacturability, quality, scaling capability of the packaged MEMS microphone.

Abstract translation: 提供了一种用于制造全晶片级封装的MEMS麦克风和由其制造的麦克风的方法，该方法包括：分别制造第一封装晶片，MEMS麦克风晶片和第二封装晶片; 对三个晶片执行晶片到晶片接合以形成多个完全晶片级封装的MEMS麦克风单元; 将全部晶圆级封装的MEMS麦克风单元分开，以形成多个完全晶片级封装的MEMS麦克风，其在晶片级完全封装，并且在单片化之后不需要任何进一步的处理。 该方法可以提高封装的MEMS麦克风的成本效益，性能一致性，可制造性，质量，扩展能力。

公开(公告)号：WO2016029359A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085207

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo

IPC: H04R19/02 ,  H04R7/14

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00476 ,  B81C2201/0107 ,  B81C2201/019 ,  H04R1/06 ,  H04R7/04 ,  H04R7/14 ,  H04R19/005 ,  H04R19/02 ,  H04R31/00 ,  H04R2201/003 ,  H04R2499/11

Abstract: A PCB speaker and a method for micromachining the speaker diaphragm on PCB substrate, the method for micromachining the speaker diaphragm on PCB substrate comprises: providing metal paths and at least one through hole on the PCB substrate (S110); providing a patterned sacrificial layer on the PCB substrate, the sacrificial layer covering all the through holes on the PCB substrate (S120); providing a diaphragm layer on the sacrificial layer through depositing, mounting or laminating, the diaphragm layer covering the sacrificial layer and electrically connected with the metal paths on the PCB substrate, thereby forming a diaphragm layer (S130); and releasing the sacrificial layer and the diaphragm layer remains (S140).

Abstract translation: 一种PCB扬声器和用于在PCB基板上微加工扬声器振膜的方法，用于在PCB基板上微加工扬声器振动膜的方法包括：在PCB基板上提供金属通路和至少一个通孔（S110）; 在所述PCB衬底上提供图案化牺牲层，所述牺牲层覆盖所述PCB衬底上的所有通孔（S120）; 通过沉积，安装或层叠覆盖牺牲层并与PCB衬底上的金属路径电连接的隔膜层在牺牲层上提供隔膜层，从而形成隔膜层（S130）; 并释放牺牲层和隔膜层（S140）。

公开(公告)号：WO2016029358A1

公开(公告)日：2016-03-03

申请号：PCT/CN2014/085206

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： ZOU, Quanbo

IPC: H04R7/14 ,  H04R19/02

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00158 ,  H04R7/14 ,  H04R19/02 ,  H04R2201/003

Abstract: A silicon speaker comprising an MEMS acoustoelectric chip and a PCB substrate (3), wherein the MEMS acoustoelectric chip comprises a corrugated diaphragm (1) on a silicon substrate (2); and one side surface of the MEMS acoustoelectric chip is metalized, and the metalized side surface (6) of the MEMS acoustoelectric chip is connected with the PCB substrate. The corrugated diaphragm is electrically conductive and interconnected with metal paths (5) on MEMS acoustoelectric chip, which is led out to a first PCB metal path as one electrode. A second PCB metal path below the MEMS chip forms another electrode of the electrostatic actuator.

Abstract translation: 一种包括MEMS声电芯片和PCB基板（3）的硅扬声器，其中所述MEMS声电芯片包括在硅衬底（2）上的波纹膜片（1）; 并且MEMS声电芯片的一个侧表面被金属化，并且MEMS声电芯片的金属化侧表面（6）与PCB衬底连接。 波纹膜片是导电的并且与MEMS声电芯片上的金属路径（5）互连，其被引导到作为一个电极的第一PCB金属路径。 MEMS芯片下面的第二个PCB金属通道形成静电致动器的另一个电极。