公开(公告)号：DE69911076D1

公开(公告)日：2003-10-09

申请号：DE69911076

申请日：1999-06-10

Applicant: IBM ,  ETH ZUERICH

Inventor： ALLENSPACH ROLF ,  BACK H ,  SIEGMANN HANS-CHRISTOPH

IPC: G11B5/65 ,  G11B5/00 ,  G11B5/02 ,  G11B5/09 ,  G11B5/74 ,  G11C11/16 ,  H01F13/00

Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.

公开(公告)号：AU8798501A

公开(公告)日：2002-04-29

申请号：AU8798501

申请日：2001-09-26

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  BEDNORZ GEORG ,  MEIJER INGMAR

IPC: G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/49 ,  G11C11/16 ,  H01F10/32

Abstract: A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

公开(公告)号：CA2376223A1

公开(公告)日：2000-12-21

申请号：CA2376223

申请日：1999-06-10

Applicant: IBM ,  EIDGENOESS TECH HOCHSCHULE

Inventor： BACK CHRISTIAN H ,  ALLENSPACH ROLF ,  SIEGMANN HANS-CHRISTOPH

IPC: G11B5/65 ,  G11B5/00 ,  G11B5/02 ,  G11B5/09 ,  G11B5/74 ,  G11C11/16 ,  H01F13/00

Abstract: A scheme for ultrafast magnetization reversal in an in-plane magnetized laye r (3) is disclosed. For that, an external magnetic field Hex is applied such that the magnetization Mprecesses around the external magnetic field Hex and the external magnetic field Hex is maintained until the precession suffices to effect the magnetization reversal. The external magnetic field Hex is applied approximately perpendicular to the magnetization M.

公开(公告)号：DE69319933T2

公开(公告)日：1999-03-25

申请号：DE69319933

申请日：1993-11-03

Applicant: IBM

Inventor： DUERIG URS ,  ALLENSPACH ROLF ,  GRUETTER PETER

IPC: G01Q90/00 ,  G11B5/33 ,  G11B11/00 ,  G11B11/10

Abstract: PCT No. PCT/EP93/03079 Sec. 371 Date May 2, 1996 Sec. 102(e) Date May 2, 1996 PCT Filed Nov. 3, 1993 PCT Pub. No. WO95/12882 PCT Pub. Date May 11, 1995An apparatus and a method for retrieving data stored on a magnetic medium with a high resolution is described. It is characterized by measuring a tunneling current which is partly depending on the magnetization of the medium (1). This dependence is caused by irradiating the medium (1) with polarized non-ionizing light. The tunneling current can be measured with a high lateral resolution by applying a probing tip (2) as known from conventional scanning tunneling microscopy or related techniques.