-
公开(公告)号：PL358458A1
公开(公告)日：2004-08-09
申请号：PL35845899
申请日：1999-06-10
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOPH
Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.
-
公开(公告)号：CZ20014393A3
公开(公告)日：2002-05-15
申请号：CZ20014393
申请日：1999-06-10
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOPH
Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.
-
公开(公告)号：BR9917383A
公开(公告)日：2002-04-23
申请号：BR9917383
申请日：1999-06-10
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOF
-
公开(公告)号：MY126038A
公开(公告)日：2006-09-29
申请号：MYPI20002272
申请日：2000-05-24
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN , SIEGMANN HANS-CHRISTOPH
Abstract: A SCHEME FOR ULTRAFAST MAGNETIZATION REVERSAL IN AN IN-PLANE MAGNETIZED LAYER (3) IS DISCLOSED. FOR THAT, AN EXTERNAL MAGNETIC FIELD Hex IS APPLIED SUCH THAT THE MAGNETIZATION M PROCESSES AROUND THE EXTERNAL MAGNETIC FIELD Hex AND THE EXTERNAL MAGNETIC FIELD Hex IS MAINTAINED UNTIL THE PRECESSION SUFFICES TO EFFECT THE MAGNETIZATION REVERSAL. THE EXTERNAL MAGNETIC FIELD Hex IS APPLIED APPROXIMATELY PERPENDICULAR TO THE MAGNETIZATION M.FIG. 1
-
公开(公告)号：HK1044845A1
公开(公告)日：2002-11-01
申请号：HK02105799
申请日：2002-08-08
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOPH
IPC: G11B5/65 , G11B5/00 , G11B5/02 , G11B5/09 , G11B5/74 , G11C11/16 , H01F13/00 , G11B , H01F , G11C
Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.
-
Patent Agency Ranking
公开(公告)号：HU0201499A2
公开(公告)日：2002-08-28
申请号：HU0201499
申请日：1999-06-10
Applicant: EIDGENOESS TECH HOCHSCHULE , IBM
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOPH
Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.
-
公开(公告)号：AU3951299A
公开(公告)日：2001-01-02
申请号：AU3951299
申请日：1999-06-10
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： ALLENSPACH ROLF , BACK CHRISTIAN H , SIEGMANN HANS-CHRISTOPH
Abstract: The magnetization reversal method involves applying external magnetic field to a magnetized layer (3) such that magnetization processes around external magnetic field. The external magnetic field is maintained until precision suffices to effect magnetization reversal. Independent claims are also included for the following: (a) magnetization reversal device;; (b) in plane magnetized method; (c) magnetic recording system.
-
公开(公告)号：CA2376223A1
公开(公告)日：2000-12-21
申请号：CA2376223
申请日：1999-06-10
Applicant: IBM , EIDGENOESS TECH HOCHSCHULE
Inventor： BACK CHRISTIAN H , ALLENSPACH ROLF , SIEGMANN HANS-CHRISTOPH
Abstract: A scheme for ultrafast magnetization reversal in an in-plane magnetized laye r (3) is disclosed. For that, an external magnetic field Hex is applied such that the magnetization Mprecesses around the external magnetic field Hex and the external magnetic field Hex is maintained until the precession suffices to effect the magnetization reversal. The external magnetic field Hex is applied approximately perpendicular to the magnetization M.
-
公开(公告)号：JP2001273601A
公开(公告)日：2001-10-05
申请号：JP2001055705
申请日：2001-02-28
Applicant: IBM
Inventor： ALLENSPACH ROLF , BINNIG GERD K , HAEBERLE WALTER , VETTIGER PETER
IPC: G11B11/10 , G11B5/00 , G11B5/012 , G11B5/02 , G11B5/255 , G11B5/48 , G11B5/74 , G11B5/82 , G11B9/00 , G11B13/04
Abstract: PROBLEM TO BE SOLVED: To provide a storage system which enables memory density of several hundred Gb/inch2 without receiving mechanical wear. SOLUTION: The method of using a magnetizable memory medium (10), exposing the memory medium to an artificial external magnetic field H coupled externally to the memory medium, simultaneously applying heat extremely locally thereto at magnitude of a bit size in bit writing and making the external magnetic field locally greater than the holding magnetic field (dependent upon temperature) in locations (32) where the heat is applied is proposed. Further, two-dimensional arrays of cantilever chips (24) are advantageously used in this storage system. The respective chips act as heat sources when activated by current. The current flows in the resistance passages in the chips (24) and generates the necessary temperature in the small memory medium locations (32) where the writing of the bit is planned. This temperature is made closer to the Curie temperature or compensation temperature of the magnetic material.
-
公开(公告)号：JP2005311356A
公开(公告)日：2005-11-04
申请号：JP2005108749
申请日：2005-04-05
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： ALLENSPACH ROLF , BEDNORZ JOHANNES G , MEIJER GERHARD INGMAR , LAM CHUNG HON , STUTZ RICHARD , WIDMER DANIEL
IPC: C23C16/40 , G11C11/56 , H01L21/02 , H01L21/20 , H01L21/316 , H01L21/8238 , H01L21/8246 , H01L27/10 , H01L45/00
CPC classification number: G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
Abstract: PROBLEM TO BE SOLVED: To provide a deposition method for a non-volatile resistance switching memory.
SOLUTION: The method for depositing a switching material can be switched between persistent conductive states. The microelectronic device is a non-volatile resistance switching memory comprising the switching material for storing digital information. The method comprises a step of depositing the switching material by a standard CMOS deposition technique at a temperature lower than 400°C.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供一种用于非易失性电阻切换存储器的沉积方法。 解决方案：用于沉积切换材料的方法可以在持续导电状态之间切换。 微电子器件是包括用于存储数字信息的开关材料的非易失性电阻切换存储器。 该方法包括通过标准CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。 版权所有（C）2006，JPO＆NCIPI
-
-
-
-
-
-
-
-
-
Search Results
34
records
(took 0.024 seconds)
