公开(公告)号：DE10126800A1

公开(公告)日：2002-12-12

申请号：DE10126800

申请日：2001-06-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WENDEL MARTIN ,  OWEN RICHARD ,  GOSSNER HARALD ,  STADLER WOLFGANG ,  RIESS PHILIPP ,  STREIBL MARTIN ,  ESMARK KAI

IPC: G01R31/00 ,  G01R31/12 ,  G01R31/28 ,  G01R31/06 ,  H01L23/62 ,  H01L21/66

Abstract: The method involves monitoring a direct current characteristic of a semiconducting component (1) and drawing a conclusion regarding the electrostatic discharge resistance of the semiconducting component. A direct current failure threshold is monitored to determine the electrostatic discharge resistance of the semiconducting component. AN Independent claim is also included for an arrangement for testing electrostatic discharge resistance of semiconducting component.