公开(公告)号：DE10136400B4

公开(公告)日：2006-01-05

申请号：DE10136400

申请日：2001-07-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD ,  MOLL PETER

IPC: C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/8242

Abstract: At least a partial layer of an upper capacitor electrode is formed by metal carbide, preferably by a transition metal carbide. In one embodiment, the metal carbide layer is formed by depositing an alternating sequence of metal-containing layers and carbon-containing layers on top of one another and then subjecting them to a heat treatment, in such a manner that they mix with one another. The patterning of the layer sequence can be carried out before the carbide formation step.

公开(公告)号：DE10164741A1

公开(公告)日：2003-06-26

申请号：DE10164741

申请日：2001-06-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD

IPC: C23C14/58 ,  C23C16/56 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/334 ,  H01L21/44 ,  H01L21/461 ,  H01L21/8242 ,  H01L29/94

公开(公告)号：DE10147120A1

公开(公告)日：2003-04-17

申请号：DE10147120

申请日：2001-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  GOLDBACH MATTHIAS ,  LUETZEN JOERN ,  HECHT THOMAS

IPC: H01L21/8242 ,  H01L27/108

Abstract: Trench capacitor comprises a dielectric (23, 28) arranged between a first capacitor electrode (24) and a second capacitor electrode (16). The first capacitor electrode has a tubular structure which protrudes into a substrate (10). The second capacitor electrode has a first section (30, 32) which lies opposite the inner side of the tubular structure over the dielectric, and a second section which lies opposite the outer side of the tubular structure over the dielectric. An Independent claim is also included for a process for the production of the trench capacitor. Preferred Features: The substrate is of a first doping type. The second section of the second capacitor electrode has doped regions of a second doping type. The first section of the second capacitor electrode has a metal layer. The dielectric is made from a nitride-oxide layer sequence or an oxide-nitride-oxide layer sequence.

公开(公告)号：DE10128326C1

公开(公告)日：2003-02-13

申请号：DE10128326

申请日：2001-06-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD

IPC: H01L21/334 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94

Abstract: A trench capacitor is fabricated by forming a trench (5) in a substrate (1), providing a lower capacitor electrode which adjoins a wall of the trench in a lower trench region, and providing a storage dielectric and an upper capacitor electrode. Fabrication of a trench capacitor comprises: (i) forming a trench in a substrate; (ii) providing a lower capacitor electrode which adjoins a wall of the trench in a lower trench region; (iii) providing a storage dielectric on the lower capacity electrode; (iv) providing an upper capacitor electrode on the storage dielectric, the upper capacitor electrode having metal-containing layers deposited one on top of another; and (v) conditioning the metal-containing layers after they have been deposited and before a next metal-containing layer is deposited.

公开(公告)号：DE10128718A1

公开(公告)日：2003-01-02

申请号：DE10128718

申请日：2001-06-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  GUTSCHE MARTIN ,  SEIDL HARALD ,  ALSMEIER JOHANN

IPC: H01L21/8242 ,  H01L27/108

Abstract: A memory cell has a selection transistor and a trench capacitor. An upper capacitor electrode of the trench capacitor, in the region of an insulating collar, has a metallic section, and that section of the upper electrode that makes contact with a storage dielectric is of a non-metallic form, in particular containing polysilicon. A buried strap, which connects the upper electrode to the select transistor, is of a non-metallic form, in particular formed of polysilicon.

公开(公告)号：DE10109564A1

公开(公告)日：2002-09-12

申请号：DE10109564

申请日：2001-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  SCHUMANN DIRK

IPC: H01L21/8242 ,  H01L27/12 ,  H01L27/108

Abstract: The invention relates to a trench condenser for use in a DRAM memory cell and a method for production of said trench condenser. Said trench condenser comprises a lower condenser electrode (10), a memory dielectric (12) and an upper condenser electrode (18), at least partly arranged in a trench (5), whereby the lower condenser electrode (10) lies adjacent to a wall of the trench in the lower region of the trench, whilst in the upper region of the trench, a spacer layer (9), made from an insulating material, is provided adjacent to the wall of the trench. The upper electrode (18) comprises at least two layers (13, 14, 15), of which at least one is metallic, with the proviso that the upper electrode does not comprise two layers of which the lower is tungsten silicide and the upper doped polymeric silicon, whereby the layers (13, 14, 15) of the upper electrode run along the walls and the floor of the trench (5) at least as far as the upper edge of the spacer layer.

公开(公告)号：DE19947082A1

公开(公告)日：2001-04-19

申请号：DE19947082

申请日：1999-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  WILLER JOSEF ,  SCHUMANN DIRK

IPC: H01L21/8242 ,  H01L21/02 ,  H01L27/108

Abstract: The integrated circuit device has at least one capacitor formed in the surface of a semiconductor substrate (1), with one capacitor electrode having a lower part (T) and a side part (S) with 2 opposing side surfaces spaced by less than the height of the side part. At least one side surface of the side part is corrugated with the peaks and troughs extending along lines parallel to the substrate surface, a dielectric layer (KD) applied to the lower part and the side part and a second capacitor electrode (P) applied to the dielectric layer.

公开(公告)号：DE19942680A1

公开(公告)日：2001-04-05

申请号：DE19942680

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  WILLER JOSEF ,  SCHUMANN DIRK

IPC: H01L21/8242 ,  H01L21/02 ,  H01L27/108

Abstract: The capacitor is arranged on the surface of a substrate (1). A first capacitor electrode has a middle part (M) and a side part (ST),which point vertically upwards, are arranged beside each other and are connected with each other via an upper part (O) located above said middle part (M) and said side part (ST). The middle part (M) is longer than the side part (ST) and is connected with other components of the circuit arrangement located below said middle part (M) and said side part (ST). The first capacitor electrode is provided with a capacitor dielectric (KD). A second capacitor electrode (P) borders the capacitor dielectric (KD).

公开(公告)号：DE50209782D1

公开(公告)日：2007-05-03

申请号：DE50209782

申请日：2002-07-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLDBACH MATTHIAS ,  HECHT THOMAS ,  LUETZEN JOERN ,  SELL BERNHARD

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242

公开(公告)号：DE10134461B4

公开(公告)日：2006-05-18

申请号：DE10134461

申请日：2001-07-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SELL BERNHARD ,  SAENGER ANNETTE ,  SCHULZE-ICKING GEORG

IPC: H01L21/768 ,  C23C16/42 ,  H01L21/285 ,  H01L21/8242