HORIZONTAL PITCH TRANSLATION USING EMBEDDED BRIDGE DIES

    公开(公告)号:US20220157706A1

    公开(公告)日:2022-05-19

    申请号:US17665315

    申请日:2022-02-04

    Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, wherein the die comprises a plurality of high density features. An interconnect bridge is embedded in the substrate, wherein the interconnect bridge may comprise a first region disposed on a surface of the interconnect bridge comprising a first plurality of features, wherein the first plurality of features comprises a first pitch. A second region disposed on the surface of the interconnect bridge comprises a second plurality of features comprising a second pitch, wherein the second pitch is greater than the first pitch.

    METAL-FREE FRAME DESIGN FOR SILICON BRIDGES FOR SEMICONDUCTOR PACKAGES

    公开(公告)号:US20210125942A1

    公开(公告)日:2021-04-29

    申请号:US17143142

    申请日:2021-01-06

    Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

    METAL-FREE FRAME DESIGN FOR SILICON BRIDGES FOR SEMICONDUCTOR PACKAGES

    公开(公告)号:US20200013734A1

    公开(公告)日:2020-01-09

    申请号:US16576520

    申请日:2019-09-19

    Abstract: Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

    DEVICE, METHOD AND SYSTEM FOR PROVIDING RECESSED INTERCONNECT STRUCTURES OF A SUBSTRATE

    公开(公告)号:US20190131227A1

    公开(公告)日:2019-05-02

    申请号:US16095916

    申请日:2016-07-01

    Abstract: Techniques and mechanisms to facilitate connectivity between circuit components via a substrate. In an embodiment, a microelectronic device includes a substrate, wherein a recess region extends from the first side of the substrate and only partially toward a second side of the substrate. First input/output (IO) contacts of a first hardware interface are disposed in the recess region. The first IO contacts are variously coupled to each to a respective metallization layer of the substrate, wherein the recess region extends though one or more other metallization layers of the substrate. In another embodiment, the microelectronic device further comprises second IO contacts of a second hardware interface, the second IO contacts to couple the microelectronic device to a printed circuit board.

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