公开(公告)号：JP2001188346A

公开(公告)日：2001-07-10

申请号：JP2000089903

申请日：2000-03-28

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  IWAZAWA HARUO ,  SOYANO AKIMASA ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F20/28 ,  C08F32/02 ,  C08F32/08 ,  C08K5/00 ,  C08L101/06 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high transparency to radiation as a chemical amplification type resist, excellent in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape, not causing development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid-dissociable group-containing resin having a skeleton of formula 1 preferably as a group of formula 2-1 or 2-2 and convertible to an alkali-soluble resin when the acid-dissociable group is dissociated and (B) a radiation sensitive acid generating agent. The component A is typified by a copolymer comprising repeating units of formula 3.