公开(公告)号：JP2009237363A

公开(公告)日：2009-10-15

申请号：JP2008084722

申请日：2008-03-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  TANAKA MASATO

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for resist underlay film which is excellent in adhesiveness with a resist film, can improve the reproducibility of a resist pattern, has durability against an alkali solution used for development or the like and against oxygen ashing upon removing the resist, can form a resist underlay film less in permeation amount of a resist material, and is excellent in storage stability. SOLUTION: The composition for a resist underlay film contains a solvent and polysiloxane containing a structural unit having a methacrylate group in a side chain and a structural unit having a phenyl group in a side chain. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供与抗蚀剂膜的粘附性优异的抗蚀剂底膜的组合物，可以提高抗蚀剂图案的再现性，对用于显影等的碱溶液和氧气具有耐久性 去除抗蚀剂时的灰化可以形成抗蚀剂材料的渗透量少的抗蚀剂底层膜，并且保存稳定性优异。 解决方案：抗蚀剂底层膜用组合物含有在侧链具有甲基丙烯酸酯基的结构单元和在侧链具有苯基的结构单元的溶剂和聚硅氧烷。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009103831A

公开(公告)日：2009-05-14

申请号：JP2007274332

申请日：2007-10-22

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  TANAKA MASATO

IPC: G03F7/11 ,  C08G77/02 ,  C08G77/14 ,  C08L83/06 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability and capable of forming a resist underlayer film excellent in adhesion to a resist film, improving the reproducibility of a resist pattern and having resistance to an alkali solution used for development and to oxygen ashing in resist removal. SOLUTION: The composition for a resist underlayer film comprises a resin comprising a repeating unit represented by formula (1) and a repeating unit represented by formula (2) and a solvent. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决问题：提供一种保存稳定性优异的抗蚀剂下层膜的组合物，能够形成与抗蚀剂膜的粘合性优异的抗蚀剂下层膜，提高抗蚀剂图案的再现性并耐碱性 用于开发的溶液和去除抗蚀剂中的氧灰。 ＆lt; P＆gt;解决方案：抗蚀剂下层膜用组合物包含由式（1）表示的重复单元和式（2）所示的重复单元和溶剂构成的树脂。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006285046A

公开(公告)日：2006-10-19

申请号：JP2005106764

申请日：2005-04-01

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  TANAKA MASATO ,  TAKAHASHI JUNICHI

IPC: G03F7/11 ,  C08G61/04 ,  C08G63/181 ,  C08G69/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for resist underlayer film, capable of forming a resist underlayer film which has functions as an anti-reflection film, and is superior in a pattern transfer performance and etching selectivity, and is also superior in the via-hole filling capability, in a dual-damascene process. SOLUTION: The composition comprises a polymer, having a structural unit represented either by Formula (1) or Formula (2). In the Formula (1), R 1 represents a bivalent organic group. In the Formula (2), R 2 , R 3 and A respectively represents bivalent organic group that are independent of each other. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 待解决的问题：提供一种抗蚀剂下层膜的组合物，能够形成具有抗反射膜功能的抗蚀剂下层膜，并且图案转印性能和蚀刻选择性优异，并且也优异 在通孔填充能力中，在双镶嵌工艺中。 组合物包含具有由式（1）或式（2）表示的结构单元的聚合物。 式（1）中，R SP 1表示二价有机基团。 在式（2）中，R“SP”2，“R”和“3”分别表示彼此独立的二价有机基团。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006053404A

公开(公告)日：2006-02-23

申请号：JP2004235695

申请日：2004-08-13

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  TANAKA MASATO ,  KONNO KEIJI ,  NOMURA NAKAATSU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/038 ,  C08F220/26 ,  C08F232/08 ,  C08J3/24 ,  C08L33/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which forms a crosslinked structure upon exposure to radiation, is degraded to low molecular weight by heating at a relatively low temperature after crosslinking, can easily be removed without damaging a substrate, has a high stationary wave preventing effect, does not cause intermixing with a resist film, and is useful to form a hard mask capable of forming a resist pattern excellent in resolution, pattern profile, etc. SOLUTION: The radiation-sensitive composition comprises (A) a copolymer typified by a copolymer having a repeating unit represented by formula (1-1) and a repeating unit represented by formula (2-1), (B) a radiation-sensitive acid generator and (C) a solvent. In the formula (1-1), R 5 denotes hydrogen atom or methyl group. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供在暴露于辐射时形成交联结构的辐射敏感组合物，通过在交联后在相对低的温度下加热而降解为低分子量，可以容易地除去而不损坏基底， 具有高的静止波防止效果，不会引起与抗蚀剂膜的混合，并且可用于形成能够形成分辨率，图案轮廓等优异的抗蚀剂图案的硬掩模。解决方案：辐射敏感组合物 包括（A）以共聚物为代表的共聚物，其具有由式（1-1）表示的重复单元和由式（2-1）表示的重复单元，（B）辐射敏感性酸产生剂和（C）溶剂 。 在式（1-1）中，R 5表示氢原子或甲基。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005179461A

公开(公告)日：2005-07-07

申请号：JP2003420621

申请日：2003-12-18

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SUGITA HIKARI ,  TANAKA MASATO ,  KONNO KEIJI ,  NOMURA NAKAATSU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C07C29/147 ,  C07C33/34 ,  C07C67/343 ,  C07C69/76 ,  C08F12/22 ,  C09D5/33 ,  C09D125/02

Abstract: PROBLEM TO BE SOLVED: To provide a process for applying a vinyl-based naphthalenecarboxylic acid (derivative) and a vinyl-based naphthalenemethanol, with which technical idea or technical concept reaching application to an antireflection film having extremely excellent properties is created. SOLUTION: The process for applying a naphthalene derivative comprises using a polymer obtained by polymerizing the naphthalene derivative represented by formula (1) or formula (5) (R 1 , R 2 and R 3 are each independently a hydrogen atom or a 1-10C monofunctional organic group) as a main component for an antireflection film. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种应用乙烯基萘羧酸（衍生物）和乙烯基萘甲醇的方法，其技术思想或技术概念被应用于具有极好性能的抗反射膜。 解决方案：应用萘衍生物的方法包括使用通过聚合由式（1）或式（5）表示的萘衍生物（R SP 1，R SP 2， / SP>和R 3 各自独立地为氢原子或1-10C单官能有机基团）作为抗反射膜的主要成分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005139169A

公开(公告)日：2005-06-02

申请号：JP2004296459

申请日：2004-10-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  YAMAHARA NOBORU ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C07F7/18 ,  C08G77/04 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a new polysiloxane that is suitable as a resin component in chemically amplified resist particularly having excellent I-D bias and depth of focus (DOF), a new silane compound useful as a raw material for producing the polysiloxane, and a polysiloxane-containing radiation ray-sensitive resin composition. SOLUTION: The silane compound is represented by formula (I). The polysiloxane has a structural unit represented by formula (1) or has the unit (1) and a structural unit represented by formula (2) (wherein R is an alkyl, R 1 and R 2 are each fluorine atom, or a lower alkyl or a lower fluorinated alkyl, (n) and (m) are each 0 or 1, (k) is 1 or 2, (i) is an integer of 0 to 10). The radiation ray-sensitive resin composition contains the polysiloxane and a radiation ray sensitive acid-generating agent. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题为了获得适合作为特别是具有优异的ID偏压和深度聚焦（DOF）的化学放大型抗蚀剂中的树脂组分的新的聚硅氧烷，可用作生产聚硅氧烷的原料的新的硅烷化合物 和含聚硅氧烷的放射线敏感性树脂组合物。 硅烷化合物由式（I）表示。 聚硅氧烷具有由式（1）表示的结构单元或具有单元（1）和由式（2）表示的结构单元（其中R是烷基，R 1 SP＆lt; SP＆gt;和R SP＆ 2是各自的氟原子，或低级烷基或低级氟化烷基，（n）和（m）各自为0或1，（k）为1或2，（i）为0〜 10）。 放射线敏感性树脂组合物含有聚硅氧烷和放射线敏感性的酸产生剂。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005015532A

公开(公告)日：2005-01-20

申请号：JP2003178719

申请日：2003-06-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  SUGITA HIKARI ,  KONNO KEIJI ,  NISHIMURA ISAO ,  NOMURA NAKAATSU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08F220/28 ,  C08F220/58 ,  C08F232/08 ,  C08K5/00 ,  C08L33/14 ,  C08L33/24 ,  C08L45/00 ,  G02B1/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition which has a high antireflection effect, does not cause intermixing, and can form a resist pattern excellent in resolution, pattern shape, etc.; and a polymer useful as a constituting component for the composition. SOLUTION: The polymer comprises first structural units represented by formula (1) and second structural units having cross-linking properties. In formula (1), R 1 and R 2 are each a monovalent atom or a monovalent organic group; R 3 and R 4 are each a hydrogen atom or a monovalent organic group; and m and n are each an integer of 0 or 1-3. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决问题：为了提供具有高抗反射效果的防反射膜形成用组合物，不会引起混合，并且可以形成分辨率，图案形状等优异的抗蚀剂图案。 以及可用作组合物的组成成分的聚合物。 聚合物包含由式（1）表示的第一结构单元和具有交联特性的第二结构单元。 式（1）中，R SB 1和R SB 2各自为一价原子或一价有机基团; R SB 3和R SB 4各自为氢原子或一价有机基团; m和n分别为0或1-3的整数。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004157469A

公开(公告)日：2004-06-03

申请号：JP2002325403

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  SUGITA HIKARI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08G77/02 ,  C08G77/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film excellent in storage stability for obtaining a resist lower layer film which suppresses resist peeling, improves reproducibility of a pattern, and has alkali resistance and resistance to oxygen ashing in resist removal, by disposal under a resist. SOLUTION: The composition for a resist lower layer film comprises (A) a hydrolysis condensation product of an alkoxysilane including a compound of the formula Si(OR 2 ) 4 , wherein four symbols R 2 may be the same or different and are each a monovalent organic group, and (B) a hydrolysis condensation product of an alkoxysilane including at least a compound of the formula R 1 n Si(OR 2 ) 4-n , wherein a plurality of symbols R 1 may be the same or different and are each a monovalent organic group or H; a plurality of symbols R 2 may be the same or different and are each a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002207295A

公开(公告)日：2002-07-26

申请号：JP2001341740

申请日：2001-11-07

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  KAWAGUCHI KAZUO ,  TANAKA MASATO ,  KOBAYASHI YASUTAKA ,  HAYASHI AKIHIRO ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI

IPC: G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film having preferable gas permeability, excellent adhesiveness with a resist film and excellent durability against a developer for the development of the resist film and to provide the resist lower layer film and a method of manufacturing the film. SOLUTION: The composition for a resist lower layer film contains a film forming component consisting of a hydrolyzed product and/or condensed product of a specified silane compound and contains a heat volatile substance which is gasified by heating. When the composition is heated, the film forming component is hardened while the heat volatile substance is gasified to form a porous silica film. The heat volatile substance preferably has 200 to 450 deg.C boiling point or decomposition temperature. The density of the resist lower film to be formed is preferably 0.7 to 1.8 g/cm3. The resist lower film is formed by heating the thin film of the above composition at a temperature equal to or higher than the boiling point or the decomposition temperature of the heat volatile substance.